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606AS
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Greenlee Textron
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Accessories, Tools, SHIELD ABRASION |
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AC101606-ATC4
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CT Micro International Corporation
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SMD Type Amber Emitter AC101606-ATC4 with dominant wavelength of 600 nm, viewing angle ±60 degrees, luminous intensity 180-360 mcd at 20 mA, forward voltage 1.75-2.35 V, and compatible with infrared and vapor phase reflow soldering. |
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JMSL0606AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-Ch Power MOSFET with 4.0 mΩ RDS(ON) at VGS = 10V, 5.2 mΩ at VGS = 4.5V, 103 A continuous drain current, in PDFN5x6-8L package, AEC-Q101 qualified for automotive applications. |
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VS3606AT
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VANGUARD
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30V/140A N-Channel Advanced Power MOSFET with 3 mΩ typical RDS(on) at VGS=10V, TO-220AB package, designed for high-efficiency power management applications. |
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SZ606A
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SUNMATE electronic Co., LTD
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Surface mount silicon Zener diode in SMB package, 5.0 W power dissipation, 3.3 to 200 V zener voltage range, low leakage current, high reliability, suitable for voltage regulation applications. |
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VS3606AP
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VANGUARD
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30V/106A N-Channel Advanced Power MOSFET with 2.0 mΩ RDS(on) at VGS=10V, 2.9 mΩ at VGS=4.5V, designed for 5V logic level control and fast switching applications in a PDFN5x6 package. |
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JMSH0606AKQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V 95A N-channel Power MOSFET in TO-252-3L package with 4.4 mΩ RDS(ON) at 10V VGS, low gate charge, and AEC-Q101 qualification for automotive applications. |
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JMSL0606AUQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in PDFN3x3-8L package with 5.0 mΩ typical RDS(ON) at VGS = 10V, 6.0 mΩ at VGS = 4.5V, 59A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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VS3606AE
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VANGUARD
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30V/92A N-Channel Advanced Power MOSFET with 2.5 mΩ typical RDS(on) at VGS=10V, PDFN3333 package, designed for high efficiency power management applications requiring low on-resistance and fast switching performance. |
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YC101606-ATC4
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CT Micro International Corporation
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SMD Type Yellow Emitter YC101606-ATC4, AlGaInP LED with 586 nm dominant wavelength, 25 mA continuous forward current, 180-360 mcd luminous intensity at 20 mA, ±60 degree viewing angle, in 1016 package. |
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JMSH0606AG
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET with 3.7 mΩ RDS(ON) at 10V VGS, 98A continuous drain current, PDFN5x6-8L package, suitable for power management, motor driving, and switching applications in industrial and consumer systems. |
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GP1606A
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Jiangsu JieJie Microelectronics Co Ltd
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GP1606A~GP1610A general purpose rectifiers in TO-220A package feature 600V to 1000V reverse voltage, 16A average forward current, glass passivated junction, and lead-free design compliant with EU RoHS. |
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JMSH0606AK
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Jiangsu JieJie Microelectronics Co Ltd
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60V 90A N-channel Power MOSFET with 4.4 mΩ RDS(ON) at 10V VGS, TO-252-3L package, suitable for power management, motor driving, and switching applications. |
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NCE4606A
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NCEPOWER
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NCE4606A is a dual N and P-channel enhancement mode power MOSFET in SOP-8 package, with 30V drain-source voltage, low RDS(ON), and high power handling capability for surface mount applications. |
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GC101606-ATC4
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CT Micro International Corporation
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SMD Type Green Emitter GC101606-ATC4, AlGaInP LED with dominant wavelength 515-525 nm, luminous intensity 1120-2250 mcd at 20 mA, viewing angle ±60 degrees, forward voltage 2.75-3.65 V, RoHS compliant, suitable for optical indicators and display applications. |
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VS3606ATD
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VANGUARD
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30V/140A N-Channel Advanced Power MOSFET with 3 mΩ RDS(on) at VGS=10V, TO-263 package, 100% avalanche tested, suitable for high-efficiency power switching applications. |
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VS3606AD
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VANGUARD
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30V/110A N-Channel Advanced Power MOSFET with low on-resistance of 2.6 mΩ at VGS=10V, TO-252 package, suitable for high-efficiency power switching applications. |
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JMSH0606AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in PDFN5x6-8L package with 3.7 mΩ RDS(ON) at 10V VGS, 103A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSL0606AU
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET with 52A continuous drain current, 5.0mΩ typical RDS(ON) at VGS = 10V, 31nC gate charge, in a PDFN3x3-8L package, suitable for power management and switching applications. |
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JMSL0606AK
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in TO-252-3L package with 4.6 mΩ RDS(ON) at 10V VGS, 90A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications. |
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AC101606-ATC4
