6 PIN POWER SWITCHING IC TO220 Search Results

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Abstract: BUJ304A
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

PHE13009

Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,

phe13007

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,

BUJ106A

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

buj303a

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

BUJ105A

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

silicon transistor Vcbo 800 Vceo 1000 Ic 20A

Abstract: ELECTRONIC BALLAST philips PHE13005
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13005 GENERAL DESCRIPTION The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,

NPN Transistor TO220 VCEO 50v i 10A

Abstract: BUT12
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,

BUT11AI

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control

BUT211

Abstract: BUT21
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.

BUJ205A

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ205A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

BDS13

Abstract: BDS13SMD BDS14 BDS14SMD BDS15 BDS15SMD
Contextual Info: BDS13 BDS13SMD BDS14 BDS14SMD BDS15 BDS15SMD SEME LAB MECHANICAL DATA Dimensions in mm SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 1 0 .6 3.6 Dia. 1 3 .5 16.5 0.8 1 23 1 3 .7 0 FEATURES • HERMETIC METAL OR CERAMIC PACKAGES

BDS10

Abstract: BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD
Contextual Info: BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD SEME LAB MECHANICAL DATA Dimensions in mm SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 1 0 .6 3.6 Dia. 1 3 .5 16.5 0.8 1 23 1 3 .7 0 FEATURES • HERMETIC METAL OR CERAMIC PACKAGES

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

1455

Abstract: BDS18 BDS18SMD BDS19 BDS19SMD
Contextual Info: BDS18 BDS18SMD BDS19 BDS19SMD MECHANICAL DATA Dimensions in mm SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 1 0 .6 3.6 Dia. 1 3 .5 16.5 0.8 1 23 1 3 .7 0 FEATURES • HERMETIC METAL OR CERAMIC PACKAGES • HIGH RELIABILITY

1455

Abstract: BDS16 BDS16SMD BDS17 BDS17SMD
Contextual Info: BDS16 BDS16SMD BDS17 BDS17SMD MECHANICAL DATA Dimensions in mm SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 1 0 .6 3.6 Dia. 1 3 .5 16.5 0.8 1 23 1 3 .7 0 FEATURES • • • • • 1.0 2 .5 4 BSC 2. 70 BSC 3

Contextual Info: DISCRETE SEMICONDUCTORS DAT PHE13009 Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high

Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ403A Silicon Diffused Power Transistor Product specification December 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ403A Silicon Diffused Power Transistor Product specification December 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

PHE13009

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHE13009 Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high

PHE13007

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHE13007 Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high

Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ105A Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

phe13007

Contextual Info: DISCRETE SEMICONDUCTORS DAT PHE13007 Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high