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    5SDA 24 Search Results

    5SDA 24 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54AC05/SDA-R
    Rochester Electronics LLC 54AC05 - Hex Inverter, With Open-Drain Outputs - Dual marked (5962R9059001SDA) PDF Buy
    JM38510/30005SDA
    Texas Instruments Triple 3-Input Positive-NAND Gates 14-CFP -55 to 125 Visit Texas Instruments Buy
    JM38510/30605SDA
    Texas Instruments 8-Bit Parallel-Out Serial Shift Registers 14-CFP -55 to 125 Visit Texas Instruments Buy
    LP3905SD-A3/NOPB
    Texas Instruments Power Management IC (PMIC) For Low Power Handheld Applications 14-WSON -40 to 85 Visit Texas Instruments Buy
    M38510/30005SDA
    Texas Instruments Triple 3-Input Positive-NAND Gates 14-CFP -55 to 125 Visit Texas Instruments Buy

    5SDA 24 Datasheets (3)

    ABB Semiconductors
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    5SDA24F1703
    ABB Semiconductors Diode, 2350A, 1700V, Avalanche Rectifier Diode Original PDF 29.71KB 2
    5SDA24F2003
    ABB Semiconductors Diode, 2350A, 2000V, Avalanche Rectifier Diode Original PDF 29.71KB 2
    5SDA24F2303
    ABB Semiconductors Diode, 2350A, 2300V, Avalanche Rectifier Diode Original PDF 29.71KB 2
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    5SDA 24 Price and Stock

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    ABB Low Voltage Products and Systems 5SDA 24F2303

    Diode: hockey-puck rectifying; 2.3kV; 2.35kA; Ø75/Ø47mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 5SDA 24F2303 1
    • 1 $320.10
    • 10 $267.31
    • 100 $267.31
    • 1000 $267.31
    • 10000 $267.31
    Get Quote

    Hitachi Energy 5SDA24F2303

    Diode, 2350A, 2300V, Avalanche Rectifier Diode
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD 5SDA24F2303 1
    • 1 $275.78
    • 10 $241.31
    • 100 $214.33
    • 1000 $188.85
    • 10000 $188.85
    Buy Now

    5SDA 24 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 5SDA 24F2303  5SDA 24F2303 Old part no. DA 808-2350-23 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 300 V RRM = 2 350


    Original
    24f23031768/138ada/045/00bsep-11 PDF

    Contextual Info: 5SDA 07D3806  5SDA 07D3806 Old part no. DA 807-680-38 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 3 800 V RRM = 790


    Original
    07d38061768/138ada/042/00bsep-11 PDF

    5SDA27F2002

    Contextual Info: 5SDA 27F2002  5SDA 27F2002 Old part no. DA 808-2700-20 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 000 V RRM = 2 700


    Original
    27f20021768/138ad/005/97csep-11+15sda27f2002 PDF

    Contextual Info: 5SDA 24F2303  5SDA 24F2303 Old part no. DA 808-2350-23 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 300 V RRM = 2 350


    Original
    24f23031768/138ada/045/00cnov-11 PDF

    05P4417

    Abstract: 05P5047
    Contextual Info: 5SDA 05P50 5SDA 05P50 Old part no. DA 805-520-50 Avalanche Diode Properties § Low forward voltage drop § Avalanche reverse characteristics § Guaranteed maximum avalanche power dissipation § Version with or without lead § Both polarity options § High operational reliability


    Original
    05p5005p501705p441705p5027+505p442705p503705p443705p504705p4447 PDF

    Contextual Info: 5SDA 27F2002  5SDA 27F2002 Old part no. DA 808-2700-20 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 000 V RRM = 2 700


    Original
    27f20021768/138ad/005/97dnov-11 PDF

    5SDA21F3204

    Contextual Info: 5SDA 21F3204  5SDA 21F3204 Old part no. DA 808-2110-32 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 3 200 V RRM = 2 110


    Original
    21f32041768/138ad/006/97csep-11+15sda21f3204 PDF

    Contextual Info: 5SDA 06D5007  5SDA 06D5007 Old part no. DA 807-590-50 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 5 000 V RRM = 690


    Original
    06d50071768/138ad/004/97csep-11 PDF

    Contextual Info: 5SDA 07D3806  5SDA 07D3806 Old part no. DA 807-680-38 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 3 800 V RRM = 790


    Original
    07d38061768/138ada/042/00cnov-11 PDF

    abb 800

    Contextual Info: 5SDA 08D3205  5SDA 08D3205 Old part no. DA 807-780-32 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 3 200 V RRM = 910


    Original
    08d32051768/138ad/003/97csep-11+1abb 800 PDF

    Contextual Info: 5SDA 06D5007  5SDA 06D5007 Old part no. DA 807-590-50 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 5 000 V RRM = 690


    Original
    06d50071768/138ad/004/97dnov-11 PDF

    Contextual Info: 5SDA 08D3205  5SDA 08D3205 Old part no. DA 807-780-32 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 3 200 V RRM = 910


    Original
    08d32051768/138ad/003/97dnov-11 PDF

    Contextual Info: 5SDA 21F3204  5SDA 21F3204 Old part no. DA 808-2110-32 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 3 200 V RRM = 2 110


    Original
    21f32041768/138ad/006/97dnov-11 PDF

    27z1

    Contextual Info: VRRM IPULSE VF VDcmax = = = = 12 60 7.32 10 kV kA V kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1202 Features Multichip Design with 6 Wafers in Series For Single Pulse Applications Voltage Sharing Resistors included Compact Design


    Original
    27z1202ch-560027z1 PDF

    5SDA24F2303

    Abstract: 24F2303 24F1703 24F2003
    Contextual Info: Key Parameters VRRM = 2300 IFAVM = 2350 IFSM = 29.0 VF0 = 0.84 rF = 0.13 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 24F2303 Doc. No. 5SYA 1131 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation


    Original
    24f2303apr-9824f200324f1703+2ch-56005sda24f2303 PDF

    27z1

    Abstract: 732 diode
    Contextual Info: VRRM IPULSE VF rF VDcmax = = = = = 12 60 7,32 0.48 10 kV kA V mΩ kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1201 Doc. No. 5SYA 04PP-01 Oct. 01 • • • • • • Features Multichip Design with 6 Wafers in Series For Single Pulse Applications


    Original
    27z120104pp-0127z1202ch-5600+227z1732 diode PDF

    Contextual Info: Key Parameters VRRM = 5000 IFAVM = 1410 IFSM = 17.5 VF0 = 1.13 rF = 0.44 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 14F5007 Doc. No. 5SYA 1126 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation


    Original
    14f5007apr-9814f440714f3807+1ch-5600 PDF

    3310 DIODE DATASHEET

    Abstract: 21F2904
    Contextual Info: Key Parameters VRRM = 3200 IFAVM = 2110 IFSM = 26.0 VF0 = 0.89 rF = 0.17 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 21F3204 Doc. No. 5SYA 1130 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation


    Original
    21f3204apr-9821f290421f2604+2ch-56003310 diode datasheet PDF

    Contextual Info: Key Parameters VRRM = 3800 IFAVM = 790 IFSM = 7.6 VF0 = 1.01 rF = 0.72 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 07D3806 Doc. No. 5SYA 1123 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation


    Original
    07d3806apr-98ch-5600 PDF

    5SDA27F2002

    Abstract: 27F1702 DIODE Ifavm 30 A 27F1402
    Contextual Info: Key Parameters VRRM = 2000 IFAVM = 2700 IFSM = 31.0 VF0 = 0.79 rF = 0.09 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 27F2002 Doc. No. 5SYA 1127 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation


    Original
    27f2002apr-9827f170227f1402+3ch-56005sda27f2002diode ifavm 30 a PDF

    Contextual Info: Key Parameters VRRM = 3200 IFAVM = 1870 IFSM = 23.5 VF0 = 0.95 rF = 0.23 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 19F3205 Doc. No. 5SYA 1129 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation


    Original
    19f3205apr-9819f2905ch-5600 PDF

    Apr98

    Abstract: 92ka
    Contextual Info: Key Parameters VRRM = 3200 IFAVM = 910 IFSM = 9.2 VF0 = 0.93 rF = 0.52 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 08D3205 Doc. No. 5SYA 1124 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation


    Original
    08d3205apr-9808d2905ch-5600+2apr9892ka PDF

    5SDA 27Z1350

    Abstract: 27z1
    Contextual Info: VRRM IPULSE VF rF VDcmax = = = = = 13.5 60 7.89 0.69 12 kV kA V mΩ kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1350 Doc. No. 5SYA 06PP-01 Oct. 01 • • • • • • Features Multichip Design with 6 Wafers in Series For Single Pulse Applications


    Original
    27z135006pp-01ch-56005sda 27z1350+127z1 PDF

    27z1

    Contextual Info: VRRM IPULSE VF rF VDcmax = = = = = 12 60 7.32 0.48 10 kV kA V mΩ kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1202 Doc. No. 5SYA 05PP-01 Oct. 01 • • • • • • Features Multichip Design with 6 Wafers in Series For Single Pulse Applications


    Original
    27z120205pp-01ch-560027z1 PDF