5SDA 24 Search Results

Contextual Info: 5SDA 24F2303  5SDA 24F2303 Old part no. DA 808-2350-23 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 300 V RRM = 2 350

Contextual Info: 5SDA 07D3806  5SDA 07D3806 Old part no. DA 807-680-38 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 3 800 V RRM = 790

5SDA27F2002

Contextual Info: 5SDA 27F2002  5SDA 27F2002 Old part no. DA 808-2700-20 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 000 V RRM = 2 700

Contextual Info: 5SDA 24F2303  5SDA 24F2303 Old part no. DA 808-2350-23 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 300 V RRM = 2 350

05P4417

Abstract: 05P5047
Contextual Info: 5SDA 05P50 5SDA 05P50 Old part no. DA 805-520-50 Avalanche Diode Properties § Low forward voltage drop § Avalanche reverse characteristics § Guaranteed maximum avalanche power dissipation § Version with or without lead § Both polarity options § High operational reliability

Contextual Info: 5SDA 27F2002  5SDA 27F2002 Old part no. DA 808-2700-20 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 000 V RRM = 2 700

5SDA21F3204

Contextual Info: 5SDA 21F3204  5SDA 21F3204 Old part no. DA 808-2110-32 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 3 200 V RRM = 2 110

Contextual Info: 5SDA 06D5007  5SDA 06D5007 Old part no. DA 807-590-50 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 5 000 V RRM = 690

Contextual Info: 5SDA 07D3806  5SDA 07D3806 Old part no. DA 807-680-38 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 3 800 V RRM = 790

abb 800

Contextual Info: 5SDA 08D3205  5SDA 08D3205 Old part no. DA 807-780-32 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 3 200 V RRM = 910

Contextual Info: 5SDA 06D5007  5SDA 06D5007 Old part no. DA 807-590-50 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 5 000 V RRM = 690

Contextual Info: 5SDA 08D3205  5SDA 08D3205 Old part no. DA 807-780-32 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 3 200 V RRM = 910

Contextual Info: 5SDA 21F3204  5SDA 21F3204 Old part no. DA 808-2110-32 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 3 200 V RRM = 2 110

27z1

Contextual Info: VRRM IPULSE VF VDcmax = = = = 12 60 7.32 10 kV kA V kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1202 Features Multichip Design with 6 Wafers in Series For Single Pulse Applications Voltage Sharing Resistors included Compact Design

5SDA24F2303

Abstract: 24F2303 24F1703 24F2003
Contextual Info: Key Parameters VRRM = 2300 IFAVM = 2350 IFSM = 29.0 VF0 = 0.84 rF = 0.13 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 24F2303 Doc. No. 5SYA 1131 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

27z1

Abstract: 732 diode
Contextual Info: VRRM IPULSE VF rF VDcmax = = = = = 12 60 7,32 0.48 10 kV kA V mΩ kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1201 Doc. No. 5SYA 04PP-01 Oct. 01 • • • • • • Features Multichip Design with 6 Wafers in Series For Single Pulse Applications

Contextual Info: Key Parameters VRRM = 5000 IFAVM = 1410 IFSM = 17.5 VF0 = 1.13 rF = 0.44 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 14F5007 Doc. No. 5SYA 1126 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

3310 DIODE DATASHEET

Abstract: 21F2904
Contextual Info: Key Parameters VRRM = 3200 IFAVM = 2110 IFSM = 26.0 VF0 = 0.89 rF = 0.17 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 21F3204 Doc. No. 5SYA 1130 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

Contextual Info: Key Parameters VRRM = 3800 IFAVM = 790 IFSM = 7.6 VF0 = 1.01 rF = 0.72 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 07D3806 Doc. No. 5SYA 1123 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

5SDA27F2002

Abstract: 27F1702 DIODE Ifavm 30 A 27F1402
Contextual Info: Key Parameters VRRM = 2000 IFAVM = 2700 IFSM = 31.0 VF0 = 0.79 rF = 0.09 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 27F2002 Doc. No. 5SYA 1127 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

Contextual Info: Key Parameters VRRM = 3200 IFAVM = 1870 IFSM = 23.5 VF0 = 0.95 rF = 0.23 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 19F3205 Doc. No. 5SYA 1129 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

Apr98

Abstract: 92ka
Contextual Info: Key Parameters VRRM = 3200 IFAVM = 910 IFSM = 9.2 VF0 = 0.93 rF = 0.52 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 08D3205 Doc. No. 5SYA 1124 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

5SDA 27Z1350

Abstract: 27z1
Contextual Info: VRRM IPULSE VF rF VDcmax = = = = = 13.5 60 7.89 0.69 12 kV kA V mΩ kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1350 Doc. No. 5SYA 06PP-01 Oct. 01 • • • • • • Features Multichip Design with 6 Wafers in Series For Single Pulse Applications

27z1

Contextual Info: VRRM IPULSE VF rF VDcmax = = = = = 12 60 7.32 0.48 10 kV kA V mΩ kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1202 Doc. No. 5SYA 05PP-01 Oct. 01 • • • • • • Features Multichip Design with 6 Wafers in Series For Single Pulse Applications