JMH65R190AFFD
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET with 170 mOhm RDS(ON) at 10V VGS, 20A continuous drain current, TO-220FP-3L package, suitable for telecom, industrial power supplies, UPS, solar, lighting, and adapters. |
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CWS55R190BF
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Wuhan Xinyuan Semiconductor Co Ltd
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N-channel 550V super junction MOSFET with 190 mΩ RDS(on) and 20A continuous drain current, designed for high-efficiency power applications such as PFC, SMPS, LED lighting, and adapters. |
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JMH65R190AW
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET with 170 mOhm RDS(ON) at VGS = 10V, 20A continuous drain current, TO-262-3L package, suitable for telecom, industrial power supplies, UPS, solar, and lighting applications. |
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JMH65R190AS
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET with 168 mOhm RDS(ON) at 10V VGS, 20A continuous drain current, low gate charge, and TO-247-3L package for high-efficiency power conversion applications. |
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JMH65R190APLN
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Jiangsu JieJie Microelectronics Co Ltd
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650 V SuperJunction Power MOSFET with 17.4 A continuous drain current, 169 mOhm RDS(ON) at 10 V VGS, in a DFN8080-4L package, suitable for telecom, industrial power supplies, UPS, solar, and lighting applications. |
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CWS55R190AF
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Wuhan Xinyuan Semiconductor Co Ltd
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N-Channel Super Junction MOSFET CWS55R190A with 550V drain-source voltage, 20A continuous drain current, 190mΩ on-state resistance, fast switching, and low Rds(on)*Qg for high-efficiency power applications. |
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JMH65R190AE
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET with 170 mOhm RDS(ON) at 10V VGS, 20A continuous drain current, TO-263-3L package, suitable for telecom, industrial power supplies, UPS, solar, and lighting applications. |
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JMH65R190APLNFD
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET in DFN8080-4L package with 169 mΩ RDS(ON) at 10V VGS, 17.4A continuous drain current, low gate charge, and fast switching capability for telecom, industrial, and power supply applications. |
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JMH65R190AC
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET in TO-220-3L package with 170 mΩ typical RDS(ON) at 10V VGS, 20A continuous drain current, low gate charge, and fast switching capability for telecom, industrial, and power supply applications. |
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JMH65R190ACFP
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Jiangsu JieJie Microelectronics Co Ltd
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650 V, 20 A superjunction power MOSFET in TO-220FP-NL package with 170 mΩ typical RDS(on) at 10 V VGS, low gate charge, and fast switching capability for industrial, telecom, and power supply applications. |
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CWS65R190BDR
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Wuhan Xinyuan Semiconductor Co Ltd
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650V N-Channel Super Junction MOSFET with 190 mOhm RDS(on) and 20A continuous drain current, available in TO-252, TO-220F, and TO-247 packages, suitable for high-efficiency power applications. |
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JMH65R190AF
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET with 170 mOhm RDS(ON) at VGS = 10V, 20A continuous drain current, TO-220FP-3L package, suitable for telecom, industrial power supplies, UPS, solar, and lighting applications. |
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JMH65R190AFFD
