5NS TURNON TIME NPN TRANSISTORS Search Results

2N210

Abstract: 2N4036 2N4056 2N2102 rG510
Contextual Info: 2N2102 • 2N4036 COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 THE 2N210? NPN AND 2N4056(PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS. C E B

GES2222A

Abstract: NPN switching transistor 2N4403 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A G E Device b v CEO V C E sa t E Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300

Contextual Info: OPTOISOLATORS SCHMITT TRIGGER OUTPUTS * Total Device Ratings NTE Type No. 3090 Output Configuration Schmitt Trigger Diag. No. 152h Maximum LED Ratings Output Ratings isolation Voltage Surge Volts Total Power (mW) Forward Current (mA) Forward Voltage (Volts)

2N2907

Abstract: PN2907 PN2907A J 2N2907 2N2222 2N2222A 2N2907A PN2222 PN2222A PNP pN2907
Contextual Info: CASE TO-18 CASE T0-92A CBE EBC 2N2907 2N2907A PN2907 PN2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,

2N2901

Abstract: npn 2907a EBC 2N2907 PN2907A FN2907 PH2907 2N2222 2N2907A LB-15N PN2907
Contextual Info: CRO 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,

Contextual Info: CRO 2N 2907 2N 2 9 07A PN 2907 PN2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY.

3094 transistor

Abstract: NTE 3087
Contextual Info: OPTOISOLATORS SCHMITT TRIGGER OUTPUTS Total Device Ratings NTE Type No. 3090 Output Configuration Schmitt Trigger Diag No. 152h Maximum LED Ratings Output Ratings Isolation Voltage Surge Volts Total Power (mW) Forward Current (mA) Forward Voltage (Volts)

1N 2907A

Abstract: BSS65 A12 marking marking H6 sot 23 FMMT2222 PNP 2907a SOT23 FMMT2907A marking FMMT2907A 2907a BCV72
Contextual Info: I FERRANTI FMMT2907 FMMT2907A X 11sem iconductors m P N P S ilico n Planar G eneral P urpose S w itc h in g Transistors DESCRIPTION These devices are intended fo r use in small and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to th e F M M T 2222 series

T10H 250V

Abstract: 2N5877 equivalent tektronix 475 2N6406 2N6408 2N5877 npn 10a 800v 2N5875 BUX82 IN4933
Contextual Info: BUX82 POWER TRANSISTORS 6A, 800V, Fast Switching, Silicon NPN Mesa FEATURES DESCRIPTION • Collector-Base Voltage: up to 800V • Peak Collector Current: 10A • On Time: < 500nS @ 2.5A These high voltage glass passivated power tra n sisto rs c o m b in e fa s t sw itching, low

2N2369 avalanche

Abstract: 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA P-6056 CTX-02-16004 motorola transistor handbook 2N3866 application note crystal generator 1GHz
Contextual Info: Application Note 122 January 2009 Diode Turn-On Time Induced Failures in Switching Regulators Never Has so Much Trouble Been Had By so Many with so Few Terminals Jim Williams David Beebe Introduction A potential difficulty due to diode turn-on time is that

2N6546

Abstract: 2N6547 180I 20C1 2N5875 2N5877
Contextual Info: POWER TRANSISTORS 2N6546 2N6547 15A, 850V, Fast Switching, Silicon NPN Mesa DESCRIPTION These high voltage glass passivated power tra n s is to rs co m bin e fa s t s w itc h in g , low s a tu ra tio n voltage and rugged Es/b ca p a b ility . They are designed fo r use in o ff-lin e power

MOSFET 4446

Abstract: ltc4446 D5411 4446bd LTC4444-5 LTC3722EGN-1 MURS120T3 bg10v 4.5v to 100v input regulator LTC4442
Contextual Info: LTC4446 High Voltage High Side/ Low Side N-Channel MOSFET Driver DESCRIPTION FEATURES n n n n n n n n n n n n n Bootstrap Supply Voltage Up to 114V Wide VCC Voltage: 7.2V to 13.5V 2.5A Peak Top Gate Pull-Up Current 3A Peak Bottom Gate Pull-Up Current 1.2Ω Top Gate Driver Pull-Down

Contextual Info: MIC5020 Current-Sensing Low-Side MOSFET Driver Preliminary Information General Description Features The M IC5020 low-side M OSFET driver is designed to oper­ ate at frequencies greaterthan 100kHz and is an ideal choice for high-speed applications such as m otor control, SMPS

MOSFET 4446

Abstract: switching regulator 12v 3A 660 tg diode LTC4440-5 100v boost ic 4446 36V high power cmos driver LTC3722-2 LTC3785 15v 5a dc boost
Contextual Info: LTC4446 High Voltage High Side/ Low Side N-Channel MOSFET Driver DESCRIPTION FEATURES n n n n n n n n n n n n n Bootstrap Supply Voltage Up to 114V Wide VCC Voltage: 7.2V to 13.5V 2.5A Peak Top Gate Pull-Up Current 3A Peak Bottom Gate Pull-Up Current 1.2Ω Top Gate Driver Pull-Down

driver IC for IRF540 MOSFET

Abstract: MOSFET 7121 mosfet 7124 12v incandescent lamp driver
Contextual Info: MIC5020 IMCaSL Current-Sensing Low-Side MOSFET Driver General Description Features The MIC5020 low-side MOSFET driver is designed to oper­ ate at frequencies greater than 100kHz 5kHz PWM tor 2% to 100% duty cycle and is an ideal choice for high-speed applications such as motor control, SMPS (switch mode

1N4008

Abstract: PTC S1380 Diode 1N4008 1N4008 diode fx3439 Diode Equivalent 1N4008 s1380 Electronic ballast 11W ptc starter s1380 ptc
Contextual Info: Application Note 13 Issue 2 January 1996 The ZCN0545A and ZCP0545A Low Power IGBTs A Silicon/ Package Efficient Device for Compact Fluorescent Lamp CFL Ballasts and Static Switching David Bradbury IGBT Characteristics The N-Type ZCN0545A and P-Type ZCP0545A are Insulated Gate Bipolar

2N6543

Abstract: 2N6542 2N5875 2N5877 IN4933 IN5820 5A5A
Contextual Info: 2N6542 2N6543 POWER TRANSISTORS 5A, 850V, Fast Switching, Silicon NPN Mesa FEATURES D E S C R IP T IO N • C o lle c t o r -B a s e V o lta g e : u p to 850V T h e s e h ig h v o lt a g e g l a s s p a s s iv a t e d po w e r • P e a k C o lle c t o r C u rre n t: 1 0A

Contextual Info: IN T E G R A T E D C IR C U IT S UC1625 UC3625 U N IT R O D E Brushless DC Motor Controller FEATURES DESCRIPTION Drives Power MOSFETs or Power Darlingtons Directly 50V Open Collector High-Side Drivers Latched Soft Start High-speed Current-Sense Amplifier with

5v to 20v pwm amplifier 40khz

Abstract: 100KRPM
Contextual Info: UC1625 UC3625 U IM IT R O O E Brushless DC Motor Controller FEATURES Drives Power MOSFETs or Power Darlingtons Directly 50V Open Collector High-Side Drivers Latched Soft Start High-speed Current-Sense Amplifier with Ideal Diode DESCRIPTION The UC1625 and UC3625 motor controller ICs integrate most of

DS0026 power mosfet driver

Abstract: IRFP460 application IRF510 12v led switch IN5820 UFN150 u 118 pin configuration irf510 Power MOSFET gate drive pulse transformer high voltage gate drive transformer SCHEMATIC WITH irfp460
Contextual Info: U-118 ul B UNITRODE APPLICATION NOTES NEW DRIVER ICs OPTIMIZE HIGH SPEED POWER MOSFET SWITCHING CHARACTERISTICS Bill Andreycak UNITRODE Integrated Circuits Corporation, Merrimack, N.H. ABSTRACT Although touted as a high impedance, voltage controlled device,

LTC4444H-5

Abstract: LTC4444-5 WSL2512R0250FEA CDEP147NP-100MC-125 LTC4444I-5 MMDL770T1G LTC4444E-5 LTC4444HMS8E-5 LTC4444MPMS8E-5 LTC4446
Contextual Info: LTC4444-5 High Voltage Synchronous N-Channel MOSFET Driver FEATURES DESCRIPTION n The LTC 4444-5 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs

48V to 12V buck boost converter

Abstract: WSL2512R0250FEA LTC3780EG 100ME100HC 48V DC to 12v dc converter circuit diagram 40 amp CDEP147NP-100MC-125 LTC3722-2 LTC3780 pc power suplly p channel mosfet 100v
Contextual Info: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES DESCRIPTION • The LTC 4444 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. The powerful driver capability reduces switching losses in

IRF510 12v led switch

Abstract: SCHEMATIC WITH irfp460 IRFP460 application IRFP460 SWITCHING FREQUENCY UFN150 pin configuration irf510 Power MOSFET u-118 IRF 510 IRFP460 UC3706
Contextual Info: U-118 ul B UNITRODE APPLICATION NOTES NEW DRIVER ICs OPTIMIZE HIGH SPEED POWER MOSFET SWITCHING CHARACTERISTICS Bill Andreycak UNITRODE Integrated Circuits Corporation, Merrimack, N.H. ABSTRACT Although touted as a high impedance, voltage controlled device,

LTC4444-5

Abstract: LTC4444MP LTC4444MPMS8E LTC4446 4444 diode LTC4440-5 LTC1154
Contextual Info: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver Features n n n n n n n n n n n n n n Description Bootstrap Supply Voltage to 114V Wide VCC Voltage: 7.2V to 13.5V Adaptive Shoot-Through Protection 2.5A Peak TG Pull-Up Current 3A Peak BG Pull-Up Current