5N ON Search Results

MTH5N100

Abstract: 5n95 5N100 AN569 MTH5N95 MTM5N100 MTM5N95 0610L mps 2108
Contextual Info: Order this data sheet by MTH5N95/D MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M TH5N95 M TH 5N 100 M TM 5N 95 M TM 5N 100 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate T M O S TMOS POWER FETs 5 AMPERES rDS on = 3 OHMS

kyocera 455KHz filter 15a

Abstract: kyocera ceramic resonator through hole PZT Transducer LC RESONATOR 455kHz kyocera 433 k G KBF455R-15 KBF-455 saw 947.5mhz kyocera 433 k 914g
Contextual Info: 5N K95D N ceramic • saw • dielectric 915 g 7g 190 5N K95D N 07 19 g N 5 5 K D N9 Table of Contents General Description . 1-2 Ceramic Filters - KHz Band

ECEA panasonic

Abstract: exb 605 EFCH PANASONIC ECK SERIES Panasonic saw panasonic EEUFC eeufc PANASONIC aluminum electrolytic snap in panasonic panasonic fader diagram Electric Double Layer Capacitors, Radial Lead Type
Contextual Info: KLA 0228440-000 PANASONIC EVQPAD04M Light Touch Switches/5N Type Japan Malaysia China 5N Type Light Touch Switches Type: EVQPA/EVQPB/EVQPF EVQ2/EVQPC Broad product range meets a variety of needs • Features ● 6.0 mm҂6.0 mm square, body thickness 3.2 mm

5n90fi

Contextual Info: £ j ï SGS-THOMSON S T P 5N 90 S T P 5N 90FI ULKgraMOeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP5N 90 STP5N 90FI • . . . . . . V d ss RDS on Id 900 V 900 V < 2.4 Q. < 2.4 Q. 5 A 2.8 A TYPICAL RDS(on) = 1.9 £2 AVALANCHE RUGGED TECHNOLOGY

EVQPAD04M

Abstract: EVQPF108K EVQPAC04M EVQPAC05R EVQPAC07K EVQPAC09K EVQPAD05R EVQPAD07K EVQPAD09K EVQPAE04M
Contextual Info: Light Touch Switches/5N Type Japan Malaysia China 5N Type Light Touch Switches Type: EVQPA/EVQPB/EVQPF EVQ2/EVQPC Broad product range meets a variety of needs • Features ● 6.0 mm҂6.0 mm square, body thickness 3.2 mm ● Travel 0.25 mm clear click feeling

EVQ235

Abstract: EVQ-PFC RC-1008 04N 6003 EVQ234
Contextual Info: Light Touch Switches/5N Type 5N Type Light Touch Switch • Features • 6x6mm square body, body thickness 3.2mm • Push travel 0.25mm, with clear “click” feeling • Wide selection with or without ground terminals • Top-push or side-push types with snap-in terminals

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STW5NA90 STH5NA90FI N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYP E V STW 5N A90 S TH 5N A90FI dss 900 V 900 V R d S ( o ii ) < 2.5 Q. < 2.5 Q. Id 5.3 A 3.5 A • TYPICAL RüS(on) =2.1 £2

IEC61204-3

Abstract: SQ100-48-5 SQ100-48-5N
Contextual Info: BTCPower TM Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion Technical Specification SQ100-48-5, SQ100-48-5N SQO100-48-5, SQO100-48-5N 48Vin 5.0Vout 25A Description The SQ Enclosure /SQO(Open Frame) family of high power density, high efficiency DC/DC converters deliver up to 25A

EVQPAD04M

Abstract: EVQPAG04M EVQPAC04M EVQPAC05R EVQPAC07K EVQPAC09K EVQPAD05R EVQPAD07K EVQPAD09K EVQPAE04M
Contextual Info: Light Touch Switches/5N Type Japan Malaysia China 5N Type Light Touch Switches Type: EVQPA/EVQPB/EVQPF EVQ2/EVQPC Broad product range meets a variety of needs • Features ● 6.0 mm҂6.0 mm square, body thickness 3.2 mm ● Travel 0.25 mm clear click feeling

CS229

Contextual Info: 32K x 9-BIT STATIC RAM Integrated Device Technology» Inc. ADVANCE INFORMATION IDT71259 FEATURES: DESCRIPTION: • 32K x 9 Static RAM • H igh-speed address / chip select time — Military: 2 5 /35/4 5n s — Com mercial: 20/25/3 5n s • Low Power Operation

82C30

Contextual Info: j je f t / Integrated Device Technology, Inc. CMOS STATIC RAM 64K 4Kx 16-BIT LATCHED CacheRAM IDT71586 FEATURES: DESCRIPTION: • W ide 4K x 16 Organization • High-speed access — Com mercial: 2 5 /35/4 5n s (max.) — Military: 3 5 /45/5 5n s (m ax.)

n05n

Abstract: EVQPAC04M EVQPAC05R EVQPAC07K EVQPAC09K EVQPAD04M EVQPAD05R EVQPAD07K EVQPAD09K EVQPAE04M
Contextual Info: Light Touch Switches/5N Type 5N Type Light Touch Switches Type: Japan Malaysia EVQPA/EVQPB/EVQPF EVQ2/EVQPC Broad product range meets a variety of needs n Features l 6.0 mm´6.0 mm square, body thickness 3.2 mm l Travel 0.25 mm, distinct click feeling l Wide selection with or without ground terminal,

Contextual Info: SGS-THOMSON iLitgraOiDOl STW5NA1oo STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIM INARY DA TA TYPE Voss R D S on Id S T W 5N A 1 00 S T H 5N A 1 00 F I 10 00 V 10 00 V < 3.5 Q < 3.5 Q 4.6 A 2.9 A • rn . . . . TYPICAL RDS(on) = 2.9 Q

EVQPBC04M

Abstract: EVQPF108K EVQPAC05R EVQPAC07K EVQPAE05R EVQPAG04M EVQPAC04M EVQPAC09K EVQ-PAC09K EVQPAD05R
Contextual Info: Light Touch Switches/5N Type 5N Type Light Touch Switches Type: Japan Malaysia EVQPA/EVQPB/EVQPF EVQ2/EVQPC Broad product range meets a variety of needs n Features l 6.0 mm´6.0 mm square, body thickness 3.2 mm l Travel 0.25 mm, clear click feeling l Wide selection with or without ground terminal,

square d safety switch

Abstract: evqqj
Contextual Info: Light Touch Switches Product Consolidation l 5 mm Square Top-push Type EVQQS l 5 mm Square side-push Type EVQQK l 5N II Side-push Type EVQPFC/D/EG l 5N4R l 5N II Top-push Type EVQPA/PB l 5 mm N Square Side-push VA Type EVQPF0/1/2/3 l 5 mm N Square Side-push VA Type

15N35

Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M T H 1 5N 3 5 M T H 1 5N 4 0 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r IM-Channel Enhancem ent-M ode Silicon G ate TM O S TM O S POWER FETs 15 AMPERES These TM O S Pow er FETs are designed fo r h ig h vo lta g e , high

GR-1209

Abstract: Lightwave Microsystems LMC-VOAC-0180-5N-H05 GR-1221
Contextual Info: LightWeaver TM Integrated Planar Lightwave Circuits for Advanced Optical Communications Systems VARIABLE OPTICAL ATTENUATOR: 8 ARRAY LMC-VOAC-0180-5N-H05 The Variable Optical Attenuator Arrays, based on Lightwave Microsystems’proprietary planar silica and polymer

Contextual Info: Extract from the online catalog STL 10N/5N Order No.: 0204110 Cross connector/bridge, Color: aluminum Product notes WEEE/RoHS-compliant since: 01/01/2003 Commercial data EAN 4017918098087

Contextual Info: Extract from the online catalog MKDS 5N HV/ 2-ZB-6,35 Order No.: 1777545 The illustration shows the 5-pos. version PC terminal block, Nominal current: 41 A, Nom. voltage: 1000 V,

MTH25N10

Abstract: TH25N08 34002 MTH25N08
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M T H 2 5N 0 8 M T H 2 5N 1 0 M TM 25N10 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T M O S P O W ER FETs AMPERES These TMOS Pow er FETs are desig n ed fo r h ig h speed p o w e r

Contextual Info: TO SHIBA TLP550 TOSHIBA PHOTOCOUPLER ti INFRARED LED + PHOTO IC P <5 <5n Unit in mm DEGITAL LOGIC ISOLATION LINE RECEIVER FEEDBACK CONTROL POWER SUPPLY CONTROL SWITCHING POWER SUPPLY TRANSISTOR INVERTOR TLP550 constructs a high emitting diode and a one chip photo diodetransistor.

Contextual Info: Extract from the online catalog MKDS 5N HV/ 7-ZB-6,35 Order No.: 1777590 The illustration shows the 5-pos. version PC terminal block, Nominal current: 41 A, Nom. voltage: 1000 V,

Contextual Info: Extract from the online catalog MKDS 5N HV/ 6-ZB-6,35 Order No.: 1777587 The illustration shows the 5-pos. version PC terminal block, Nominal current: 41 A, Nom. voltage: 1000 V,

Contextual Info: Extract from the online catalog MKDS 5N HV/ 3-ZB-6,35 Order No.: 1777558 The illustration shows the 5-pos. version PC terminal block, Nominal current: 41 A, Nom. voltage: 1000 V,