5N ON Search Results

MTH5N100

Abstract: 5n95 5N100 AN569 MTH5N95 MTM5N100 MTM5N95 0610L mps 2108
Contextual Info: Order this data sheet by MTH5N95/D MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M TH5N95 M TH 5N 100 M TM 5N 95 M TM 5N 100 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate T M O S TMOS POWER FETs 5 AMPERES rDS on = 3 OHMS

kyocera 455KHz filter 15a

Abstract: kyocera ceramic resonator through hole PZT Transducer LC RESONATOR 455kHz kyocera 433 k G KBF455R-15 KBF-455 saw 947.5mhz kyocera 433 k 914g
Contextual Info: 5N K95D N ceramic • saw • dielectric 915 g 7g 190 5N K95D N 07 19 g N 5 5 K D N9 Table of Contents General Description . 1-2 Ceramic Filters - KHz Band

ECEA panasonic

Abstract: exb 605 EFCH PANASONIC ECK SERIES Panasonic saw panasonic EEUFC eeufc PANASONIC aluminum electrolytic snap in panasonic panasonic fader diagram Electric Double Layer Capacitors, Radial Lead Type
Contextual Info: KLA 0228440-000 PANASONIC EVQPAD04M Light Touch Switches/5N Type Japan Malaysia China 5N Type Light Touch Switches Type: EVQPA/EVQPB/EVQPF EVQ2/EVQPC Broad product range meets a variety of needs • Features ● 6.0 mm҂6.0 mm square, body thickness 3.2 mm

EVQPAD04M

Abstract: EVQPF108K EVQPAC04M EVQPAC05R EVQPAC07K EVQPAC09K EVQPAD05R EVQPAD07K EVQPAD09K EVQPAE04M
Contextual Info: Light Touch Switches/5N Type Japan Malaysia China 5N Type Light Touch Switches Type: EVQPA/EVQPB/EVQPF EVQ2/EVQPC Broad product range meets a variety of needs • Features ● 6.0 mm҂6.0 mm square, body thickness 3.2 mm ● Travel 0.25 mm clear click feeling

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STW5NA90 STH5NA90FI N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYP E V STW 5N A90 S TH 5N A90FI dss 900 V 900 V R d S ( o ii ) < 2.5 Q. < 2.5 Q. Id 5.3 A 3.5 A • TYPICAL RüS(on) =2.1 £2

IEC61204-3

Abstract: SQ100-48-5 SQ100-48-5N
Contextual Info: BTCPower TM Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion Technical Specification SQ100-48-5, SQ100-48-5N SQO100-48-5, SQO100-48-5N 48Vin 5.0Vout 25A Description The SQ Enclosure /SQO(Open Frame) family of high power density, high efficiency DC/DC converters deliver up to 25A

EVQPAD04M

Abstract: EVQPAG04M EVQPAC04M EVQPAC05R EVQPAC07K EVQPAC09K EVQPAD05R EVQPAD07K EVQPAD09K EVQPAE04M
Contextual Info: Light Touch Switches/5N Type Japan Malaysia China 5N Type Light Touch Switches Type: EVQPA/EVQPB/EVQPF EVQ2/EVQPC Broad product range meets a variety of needs • Features ● 6.0 mm҂6.0 mm square, body thickness 3.2 mm ● Travel 0.25 mm clear click feeling

CS229

Contextual Info: 32K x 9-BIT STATIC RAM Integrated Device Technology» Inc. ADVANCE INFORMATION IDT71259 FEATURES: DESCRIPTION: • 32K x 9 Static RAM • H igh-speed address / chip select time — Military: 2 5 /35/4 5n s — Com mercial: 20/25/3 5n s • Low Power Operation

82C30

Contextual Info: j je f t / Integrated Device Technology, Inc. CMOS STATIC RAM 64K 4Kx 16-BIT LATCHED CacheRAM IDT71586 FEATURES: DESCRIPTION: • W ide 4K x 16 Organization • High-speed access — Com mercial: 2 5 /35/4 5n s (max.) — Military: 3 5 /45/5 5n s (m ax.)

EVQPBC04M

Abstract: EVQPF108K EVQPAC05R EVQPAC07K EVQPAE05R EVQPAG04M EVQPAC04M EVQPAC09K EVQ-PAC09K EVQPAD05R
Contextual Info: Light Touch Switches/5N Type 5N Type Light Touch Switches Type: Japan Malaysia EVQPA/EVQPB/EVQPF EVQ2/EVQPC Broad product range meets a variety of needs n Features l 6.0 mm´6.0 mm square, body thickness 3.2 mm l Travel 0.25 mm, clear click feeling l Wide selection with or without ground terminal,

square d safety switch

Abstract: evqqj
Contextual Info: Light Touch Switches Product Consolidation l 5 mm Square Top-push Type EVQQS l 5 mm Square side-push Type EVQQK l 5N II Side-push Type EVQPFC/D/EG l 5N4R l 5N II Top-push Type EVQPA/PB l 5 mm N Square Side-push VA Type EVQPF0/1/2/3 l 5 mm N Square Side-push VA Type

15N35

Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M T H 1 5N 3 5 M T H 1 5N 4 0 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r IM-Channel Enhancem ent-M ode Silicon G ate TM O S TM O S POWER FETs 15 AMPERES These TM O S Pow er FETs are designed fo r h ig h vo lta g e , high

GR-1209

Abstract: Lightwave Microsystems LMC-VOAC-0180-5N-H05 GR-1221
Contextual Info: LightWeaver TM Integrated Planar Lightwave Circuits for Advanced Optical Communications Systems VARIABLE OPTICAL ATTENUATOR: 8 ARRAY LMC-VOAC-0180-5N-H05 The Variable Optical Attenuator Arrays, based on Lightwave Microsystems’proprietary planar silica and polymer

Contextual Info: Extract from the online catalog STL 10N/5N Order No.: 0204110 Cross connector/bridge, Color: aluminum Product notes WEEE/RoHS-compliant since: 01/01/2003 Commercial data EAN 4017918098087

EVQ-21407

Abstract: evq22705r EVQPAG07K EVQ21507K EVQPAC09K
Contextual Info: ライトタッチスイッチ/5N形 5N形ライトタッチスイッチ Type: Japan Malaysia EVQPA/EVQPB/EVQPF EVQ2/EVQPC 豊富な品種で多様なニーズに対応 n 特 長 l 外形寸法6.0 mm´6.0 mm，本体厚さ3.2 mmと小形，薄形 l プッシュストローク0.25 mm，確かなクリック感

8232T

Contextual Info: P R E L IMINA R Y P R ODUC T INF OR MA T ION B IP OL AR ANAL OG INT E G R AT E D C IR C UIT P C 8232T 5N S iG e: C L OW NOIS E AMP L IF IE R F OR G P S DE S C R IP T ION T he P C 8232T 5N is a s ilicon germanium carbon S iG e:C monolithic integrated circuit des igned as low nois e

Contextual Info: Extract from the online catalog MKDS 5N HV/ 3-ZB-6,35 SZS Order No.: 1777668 PCB terminal block, Nominal current: 41 A, Nom. voltage: 1000 V, Pitch: 6.35 mm, Number of positions: 3, Connection method: Screw

power inductor markings

Abstract: RFLW5N1500 bond wire gold AEC-Q200-002
Contextual Info: RFLW 5N Vishay Electro-Films Wire Bondable RF Spiral Inductor, 0.050" x 0.050" FEATURES • Wire bond assembly • Small size: 0.050" x 0.050" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF RFLW series of thin film spiral inductors on quartz are

stepping motor mitsumi

Abstract: M25SP-5 mitsumi M25SP-5N M25SP-5N m25sp5n mitsumi dc motor 12v motor dc torque M25S bipolar Stepping DRIVER bipolar Stepping Motor Driver
Contextual Info: MITSUMI Stepping Motors M25SP-5, -5N Stepping Motors OUTLINE M25SP-5 motor's body is the thinnest in models in Ø25 series. MITSUMI can supply those motors with optimum voltage and current depending on driver IC to be used for the machinery and equipment.

Contextual Info: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET BVDgs RdS ON (max) If Ordering Information 60V 5n 75mA b v dss / Order Number / Package TO-92 2N7000 Features I i Free from secondary breakdown !J Low power drive requirement r i Ease of paralleling

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> pRÖ-Vn w>»'5n!>“ * M GFC42V6472A rV .;fvc^'on arS wc 6.4~ 7.2G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION TheM G FC 42V6472Aisan internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2

ESE11

Abstract: ESE11MV2 ESE11SV1 ESE11SV7 ESE11MH2
Contextual Info: Detector Switches/ESE11 5N Detector Switches Type: ESE11 • Features ● Wide range of customizable features including operational directions ● Light operating force ● Wide available range for reflow soldering ■ Recommended Applications ● Detection of media in portable electronic equipment

TA31065N

Abstract: TA31065
Contextual Info: TOSHIBA TA31065N TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 3 10 6 5N SPEECH NETWORK FOR TELEPHONE FEATURES • Direct interface with light and compact ceramic transmitter-receiver is possible. • Receiver of low impedance type can also be used.

Contextual Info: Electrical Voltage: 250V DC max. Current: 3.0A Contact Resistance: 8mΩ max. Insulation Resistance: 500 MΩ min. 2.50mm .098" Pitch User Friendly Wire-to-Board Header Mechanical Mating Force: 5N max. Unmating Force: 3N min. Durability: 15 cycles 90649