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    5N/50 Search Results

    5N/50 Datasheets (19)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    5N50
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 27.17KB 1
    5N50
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 27.17KB 1
    badge 5N50A
    		AK Semiconductor N-channel MOSFET 5N50A with 500V drain-source voltage, 5A continuous drain current, 1.3 ohm typical on-resistance at 10V gate-source voltage, and low gate charge, suitable for high-speed switching applications. Original PDF
    badge HKTD5N50
    		Shenzhen Heketai Electronics Co Ltd N-channel Power MOSFET with 500V drain-source voltage, 5A continuous drain current, 1.6Ω max RDS(ON) at VGS=10V, and TO-252 package, designed for high-density applications with fully characterized avalanche capability. Original PDF
    badge JMPF15N50BJ
    		Jiangsu JieJie Microelectronics Co Ltd 500V, 15A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.51 ohm at VGS = 10V, designed for fast switching, load switch, PWM, and power management applications. Original PDF
    badge JMPC25N50BJ
    		Jiangsu JieJie Microelectronics Co Ltd 25A, 500V N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 0.30 ohm at VGS = 10V, suitable for power management and PWM applications. Original PDF
    badge SL5N50D
    		SLKOR RDS(ON) Max 1.5Ω, Gate Charge 18.5nC, 100% Avalanche Tested, TO-252, VDSS 500V, ID 5.0A, PD 98.4W, Tj -55 ~ +150°C. Original PDF
    badge AKZE5N50
    		AK Semiconductor N-Channel 500 V MOSFET with 1.2 ohm RDS(on) at 10 V VGS, 39 nC gate charge, TO-252 package, designed for high-frequency operation and featuring low input capacitance and avalanche current protection. Original PDF
    badge 45N50A
    		AK Semiconductor 45A 500V N-channel enhancement mode MOSFET with typical on-resistance of 0.08 ohm at VGS = 10V, low gate charge, and high dv/dt capability, available in TO-247 and TO-247S packages. Original PDF
    badge SLD_F5N50S2
    		Maplesemi 500V N-Channel MOSFET with 5A continuous drain current, 1.3Ω typical RDS(on) at VGS = 10V, low gate charge of 11.6nC, and high avalanche energy endurance, suitable for high-efficiency power conversion applications. Original PDF
    badge JMPF5N50BJ
    		Jiangsu JieJie Microelectronics Co Ltd 500V, 5A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 1.81 ohms at VGS = 10V, featuring fast switching, improved dv/dt capability, and 100% UIS and ΔVds tested. Original PDF
    badge JMPK5N50BJ
    		Jiangsu JieJie Microelectronics Co Ltd 500V, 5A N-channel Enhancement Mode Power MOSFET in TO-252-3L package with RDS(ON) less than 1.81 ohm at VGS = 10V, designed for power management, load switching, and PWM applications. Original PDF
    badge JMPC5N50BJ
    		Jiangsu JieJie Microelectronics Co Ltd 500V, 5A N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 1.81 ohms at VGS = 10V, designed for fast switching, PWM applications, and power management. Original PDF
    badge 25N50A
    		AK Semiconductor 25N50A N-channel enhancement mode MOSFET with 500V drain-source voltage, 25A continuous drain current, 0.21Ω typical on-resistance at 10V gate-source voltage, and TO-220F, TO-247, TO-247S package options. Original PDF
    badge JMPF25N50BJ
    		Jiangsu JieJie Microelectronics Co Ltd 500V, 25A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.30 ohm at VGS = 10V, designed for fast switching and power management applications in a TO-220FP-3L package. Original PDF
    badge MDD5N50D
    		Microdiode Semiconductor (MDD) 500V N-Channel Enhancement Mode MOSFET, VDS 500V, ID(Tc=25°C) 5A, RDS(on),max 1.6Ω@VGS=10V, Qg,typ 12.8nC. Original PDF
    badge SLD5N50S2
    		Maplesemi 5A, 500V N-channel MOSFET with RDS(on) of 1.35 ohm at VGS = 10V, low gate charge of 10nC, high avalanche ruggedness, and fast switching performance in a DPAK package. Original PDF
    badge JMPC15N50BJ
    		Jiangsu JieJie Microelectronics Co Ltd 500V, 15A N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 0.51 ohm at VGS = 10V, suitable for fast switching, load switch, and power management applications. Original PDF
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    5N/50 Price and Stock

    Cal-Chip Electronics

    Cal-Chip Electronics CHV0805N500200JCT

    HVCAP0805 COG 20PF 5% 500V
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    DigiKey () CHV0805N500200JCT Cut Tape 7,945 1
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    Cal-Chip Electronics CHV0805N500151JCT

    HVCAP0805 COG 150PF 5% 500V
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    Cal-Chip Electronics CHV0805N500680JCT

    HVCAP0805 COG 68PF 5% 500V
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    DigiKey () CHV0805N500680JCT Digi-Reel 4,000 1
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    Cal-Chip Electronics CHV0805N500821FCT

    HVCAP0805 COG 820PF 1% 500V
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    DigiKey () CHV0805N500821FCT Digi-Reel 3,960 1
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    Cal-Chip Electronics CHV0805N500103KXT

    HVCAP0805 X7R .01UF 10% 500V
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    DigiKey () CHV0805N500103KXT Cut Tape 2,643 1
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