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5N100
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
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29.7KB |
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5N100
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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29.7KB |
1 |
5N10
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Shenzhen Heketai Electronics Co Ltd
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N-channel high voltage MOSFET in SOT-23-3L package with 100V drain-source voltage, 5A continuous drain current, 115mΩ on-resistance at VGS=10V, and low input capacitance for fast switching applications.N-channel high voltage MOSFET with 100 V drain-source voltage, 5 A continuous drain current, 115 mΩ on-resistance at VGS=10V, and low input capacitance in SOT-23-3L surface mount package. |
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AKP095N10
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AK Semiconductor
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AKP095N10 N-Channel Super Trench II Power MOSFET with 100V VDS, 65A ID, 8.5mΩ RDS(on) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. |
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SK05N10A
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Shikues Semiconductor
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Advanced trench tech, low gate charge, high density cell, excellent heat dissipation, power switching, UPS. |
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HSS5N10
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Huashuo Semiconductor
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N-channel 100V fast switching MOSFET with 15A continuous drain current, 100mΩ typical RDS(on), low gate charge, and high cell density trench technology for synchronous buck converter applications. |
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SL05N10A
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SLKOR
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HKT05N10
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Shenzhen Heketai Electronics Co Ltd
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N-channel high voltage MOSFET with 100 V drain-source voltage, 5 A continuous drain current, 115 mΩ on-resistance at VGS=10V, and low input capacitance in SOT-23-3L surface mount package. |
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SK15N10
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Shikues Semiconductor
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N-Channel 100V MOSFET, RDS(ON)≦100mΩ@VGS=10V, low RDS(ON), high DC current, medium voltage applications. |
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NM0805N101J251CPBN
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Hui Ju (Capacitors)
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Multilayer ceramic capacitor, NM Series, mid-voltage, rated 100V to 630V, available in various case sizes with X7R and C0G dielectrics, lead-free termination, RoHS compliant. |
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HKTD15N10
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Shenzhen Heketai Electronics Co Ltd
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N-channel Power MOSFET HKTD15N10 with 100V drain-source voltage, 15A continuous drain current, and 100mΩ maximum RDS(on) at VGS=10V, available in TO-252 package. |
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AKP045N10
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AK Semiconductor
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N-channel MOSFET with 100V VDS, 125A ID, and low RDS(on) of 4.2mΩ (TO-220) or 4.0mΩ (TO-263) at VGS=10V, utilizing Super Trench II technology for high-frequency switching efficiency. |
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NCEAP25N10AD
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NCEPOWER
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NCEAP25N10AD is an N-channel Super Trench II power MOSFET with 100 V drain-source voltage, 37 A continuous drain current, and low on-resistance of 21 mΩ at 10 V gate-source voltage, optimized for high-frequency switching and synchronous rectification. |
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NCEAP25N10AK
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NCEPOWER
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NCEAP25N10AK is an automotive-grade N-channel Super Trench II power MOSFET with 100V drain-source voltage, 37A continuous drain current, and low on-resistance of 21mΩ at VGS=10V, optimized for high-frequency switching and synchronous rectification. |
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SLP25N10T
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Maplesemi
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N-Channel MOSFET SLP25N10T, 100V, 25A, RDS(on) 40mΩ at VGS = 10V, TO-220C package, designed for high-efficiency power management and switching applications. |
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SL65N10Q
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SLKOR
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CJU15N10
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JCET Group
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N-channel Power MOSFET CJU15N10 with 100V drain-source voltage, 15A continuous drain current, 70mΩ RDS(on) at 10V VGS, featuring low gate charge, fast switching, and avalanche energy rating. |
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SL15N10A
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SLKOR
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VDS 100V, ID 15A, RDS(ON) at VGS=10V <115mohm, at VGS=4.5V <10mohm, Trench Power MV MOSFET, high density cell, heat dissipation, DC-DC Converters, power management. |
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MDD15N10D
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Microdiode Semiconductor
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100V N-Channel Enhancement Mode MOSFET |
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NCEAP25N10AG
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NCEPOWER
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NCEAP25N10AG is an automotive-grade N-channel Super Trench II power MOSFET with 100 V drain-source voltage, 32 A continuous drain current, and low on-resistance of 21 mΩ at 10 V gate-source voltage, suitable for high-frequency switching and synchronous rectification applications. |
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5N10
