5M52 Search Results

Contextual Info: MITSUBISHI LSIs 5M5255BP, BFP, BKP-70,-85,-10,-12.-70L, -85L,- 10L,- 12L,-70LL,-85LL,- 10LL,-12LL 2 6 2 1 4 4 -B IT 3 2 7 6 8 -W 0 R D BY 8-BIT CM O S STATIC RAM DESCRIPTION The 5M5255BP, BFP, BKP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabri­

M5M5256

Abstract: 5258BP 5M5256BP 5m5256
Contextual Info: MITSUBISHI LSIs 5M5256BP,BFP BKP-70,-85,-10,-12,-15,.70L, -85L,-10L,-12L,-15L,-70LL,-85LL,-10LL,-12LL,-15LL _ _ 2 6 2 1 4 4 - B I T ( 3 2 7 X - W 0 R P B Y 8 - B I T C M 0 S S T A T I C R A M DESCRIPTION PIN CONFIGURATION (TOP VIEW)

H5M5256

Contextual Info: MITSUBISHI LSIs 5M5256CP,FP,KP,VP,RV-85LL,-85XL, -10LL.-10XL 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This M 5M 5256CP.FP.KP.VP,RV is a 2 6 2144- b it CMOS static RAMs organized as 3 2 7 68 -w ords by 8 -b its which is fabricated using high-performance 3 polysilicon CMOS

M5M5278C-25

Abstract: M5M5278c
Contextual Info: MITSUBISHI LS Is 5M5278CP, J-15,-20,-25,-25L 5M5278CFP-20,-25,-25L 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M 5M 5278C is a fam ily o f 32768-w ord by 8-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated w ith the high-performance CMOS silicon' A 9 - > [T

msm5255

Abstract: M5M5255-70L BKP-70 MSM5255BP 5255-I2L
Contextual Info: M ITSU B ISH I L S Is 5M5255BP, BFP, BKP-70,-85,-10,-12,-70L, -85L,-10L,-12L,-70LL,-85LLf-10LL,-12LL 2 6 2 1 4 4 -B IT 3 2 7 6 8-W O R D BY 8 -B IT C M O S STA TIC R A M DESCRIPTION The 5M5255BP, BFP, BKP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabri­

Contextual Info: b S H Tf i S S 005MSES 445 • M IT1 MITSUBISHILSls 5M5256CP,FP,KP,VP,RV-55LL,-55XL, -70LL.-70XL 262144-BIT 32768-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION This 5M5256CP, FP, KP, VP, RV is a 2 6 2 1 4 4 -bit CMOS static RAMs organized as 3 2 7 6 8 -words by 8 - bits which

Contextual Info: International ÜÔSSMSS 001 Sb7 b Ö40 • INR i“R Rectifier PD-9.525D IRFR220 IRFU220 HEXFET Power M O SFET bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR220 Straight Lead (IRFU220) Available in Tape & Reel

5m5256

Abstract: 74hc138m TL-100NS
Contextual Info: MITSUBISHI LSIs MH25609ASN-10 2359296-BIT 262144-WORD BY 9-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H 2 5 6 0 9 A S N is a 2 3 5 9 2 9 6 - b it CMOS static RAM m odule organized as 2 6 2 1 4 4 -w o rd by 9 -b its. It consists o f eight industry standard 3 2 K x 8 static RAM s, 2 5 6 K x 1

L 358

Abstract: M5M5259B-15
Contextual Info: MITSUBISHI LS Is M 5 M 5259BP, J-15 ,-17,-20,-25,-35, -20L,-25L,-35L 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM (WITH OE) DESCRIPTION The 5M5259B is a family of 65536 word by 4-bit static RAMs with OE input, fabricated with the high-performance PIN CONFIGURATION (TOP VIEW)

Contextual Info: MITSUBISHI LS Is 5M5269P-20,-25,-35 5M5269FP-25,-35 294912-BIT 32768-WORD BY 9-BIT CMOS STATIC RAM DESCRIPTION The 5M5269 is a family of 32768-word by 9-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high-performance CMOS silicon I— VCC (5V)

Contextual Info: MITSUBISHI LS Is 5M5256BVP,RV-70L,-85L,-10L,-12L,-15L, -70LL,-85LL,-10LL,-12LL,-15LL 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM • Package enable OE directly controls the ou tput state. Setting the OE M 5M 5256BVP, RV at a high level, the ou tput state is in a high-impedance state,

Contextual Info: ^24^025 GG2 4 3 5 5 ObO • M I T I MITSUBISHI LSIs M 5 M 5 2 5 9 B P , J - 15 , - 17, - 2 0 , - 2 5 , - 3 5 , - 20L , - 25L , - 35L 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM (WITH OE) DESCRIPTION The 5M5259B is a family of 65536 word by 4-bit static

M5M5258-70

Abstract: M5M5256 M5M5256BP m5m5256bfp M5M5256-10L M5M5256-70 BKP-12 5256BP BKP-85 m5m5256 25
Contextual Info: MITSUBISHI LSIs 5M5256BP,BFP,BKP-70,-85,-10,-12,-15,-70L, •85L,-10L,-12L,-15L,-70LL,-85LL,-10LL,-12LL,-15LL 2 6 2 144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This 5M5256BP, BFP, BKP is a 262,144-bit CMOS static

MB84256-15LL

Abstract: M5M5256AP-70L M5M5256P-12 MB84256 mb84256-12ll HP121 M5M5256AP-70 M5M5256P M5M5256P-15 MB84256-10L
Contextual Info: 2 5 6 K £ tt £ ÌA&K& rc CMOS X A TAAC max ns) TCAC max (ns) TOE nax (ns) S t a t i c ^ y '/ TOH Bin (ns) TOD nax (ns) T»P «in (ns) RAM (3 2 7 6 8 x8 ) ft '•» TDS nin (ns) ffi TDH (ns) TWD ■in (ns) TWR nax (ns) LH52258-25 SHARP 0—70 25 25

MSM5258

Abstract: M5M5258 5258p
Contextual Info: M ITSUBISHI LSIs 5M5258P, J-35, -45, -45L 2 6 2 1 4 4 -B IT 6 5 5 3 6 -W O R D BY 4 - B IT CMOS STATIC RAM DESCRIPTION The 5M5258P is a fa m ily o f 65536 w ord by 4 -b it static RAMs, fabricated w ith the high-performance CMOS silicon­ gate MOS process and designed fo r high-speed application.

dc relay economizing coil

Abstract: contactor 115 volt 400 hz 280 amp 5M65 5M65L vitrohm resistors 1134 scr dc compound wound motor silicon rectifier for exciter S 101 156 924 relay vitrohm rheostat
Contextual Info: Index Description DC Control Page Number Index . J1 146 Field Loss Relay . J2 5 DP Series - General Information . J3

M5M5256

Contextual Info: MITSUBISHI MEMORY/ASIC blE D • b 2 4 ciöBS 0 0 1 0 5 5 7 4bb ■ M I T I MITSUBISHI LSIs 5M5256BVP,BRV -10L-W,-12L-W, -15L-W -1 OLL-W,-12LL-W,-15LL-W 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM D E S C R IP T IO N The M 5M 5256B V P.BRV are 262,144-bit CM OS static RAM s organized as

IC JRC 3860

Abstract: 2060 JRC 3860 jrc jrc 2060 jrc 3860 ift variable for radio VOLTAGE FOLLOWER NON INVERTING AND INVERTING AMPLIFIER JRC 2355 display 7 segm JRC 2100
Contextual Info: m N 2 — C H A R A C T ER DOT • LCD M A T R I X CONTROLLER ■ 4 6 5 DRIVER PACKAGE OUTLINE in single chip. contains voltage converter and regulator, resistance, 6 is a Dot Matrix LCD controller driver for 12-character 4-line with icon display It U PRELIMINARY

M5M6256-85L

Abstract: 5m5256 M5M5256
Contextual Info: MITSUBISHI LS Is M 5 M 5 2 5 6 B P ,F P ,K P -7 0 ,-8 5 ,-1 0 ,-1 2 ,-1 5 ,-7 0 L ,-8 5 L , -1 0 L ,-1 2 L ,-1 5 L ,-7 0 L L ,-8 5 L L ,-1 0 L L ,-1 2 L L ,-1 5 L L 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This M 5M 5256B P, FP, KP is a

Contextual Info: MITSUBISHI LSIs < ¡C*5M5258BP, BJ-15,-20 44-B IT 65536-W O R D BY 4-BIT CMOS STATIC RAM DESCRIPTION The M 5 M 528 B is a fa m ily o f 6 5 5 3 6 w ord by 4-b it static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated w ith the high-performance C M OS siliconThese devices operate on a single 5 V supply, and are direct­

Contextual Info: MITSUBISHI LSIs 5M5256DFP,VP,RV-70VLL,-85VLL, -70VXL,-85VXL 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This M 5M 5256D FP, VP, RV is a 262144-bit C M O S static RAMs PIN CONFIGURATION (TOP VIEW) organized as 32768-words by 8-bits which is fabricated using

Contextual Info: MITSUBISHI LS Is M 5 M 5 2 5 9 C P , J -1 5 ,-2 0 ,-2 5 ,-3 5 , -2 0 L ,-2 5 L ,-3 5 L 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM (WITH OE) DESCRIPTION The 5M5259C is a family of 65536 word by 4-bit static RAMs with 0E input, fabricated with the high-performance

M5M5257B-15

Abstract: m5m5257b M5M5257 BJ15 262144-WORD
Contextual Info: MITSUBISHI LS Is « S M 5 M 5 2 5 7 B P , B J - 1 5 , - 2 - B I T 2 6 2 1 4 4 -W O R D BY 1 -B IT CMOS STATIC RAM DESCRIPTION The M 5M 5257B is a fa m ily o f 262144-word by 1-bit static RAMs, fabricated w ith the high-performance CM OSsilicongate MOS process and designed fo r high-speed application.

Contextual Info: • bSMIflSi 0024232 bf l 2 ■ M I T I MITSUBISHILSIs 5M5256CP,FP,KP,VP,RV-85LL,-85XL, -10LL,-10XL 262144-BIT 32768-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION This 5M5256CP, FP, KP, VP, RV is a 2 6 2 1 4 4 -bit CMOS static RAMs organized as 327 68 -w o rds by 8 -b its which