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5PAE Abstract: BETA-100 5HPE ibm multi-emitter transistor BiCMOS Contextual Info: IBM Systems and Technology Group IBM SiGe BiCMOS 5PAe Advanced through-silicon via technology for RF power applications New direction for power ampliﬁer solutions Highlights ● Cost-effective 350-nm IBM SiGe BiCMOS specialty foundry technology ● Through-silicon via technology provides	Original	350-nm TGD03011-USEN-04 5PAE BETA-100 5HPE ibm multi-emitter transistor BiCMOS	PDF

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Abstract: BETA-100 5HPE ibm multi-emitter transistor BiCMOS
Contextual Info: IBM Systems and Technology Group IBM SiGe BiCMOS 5PAe Advanced through-silicon via technology for RF power applications New direction for power ampliﬁer solutions Highlights ● Cost-effective 350-nm IBM SiGe BiCMOS specialty foundry technology ● Through-silicon via technology provides

Original

350-nm TGD03011-USEN-04 5PAE BETA-100 5HPE ibm multi-emitter transistor BiCMOS

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