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5H 10
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Bel Fuse
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Fuses, 10A 250V T IEC CERM 5X20 |
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AK15H10
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 150V drain-source voltage, 100A continuous drain current, 9.8mΩ typical RDS(ON) at 10V VGS, suitable for power switching and high frequency applications. |
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AK15H10A
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 150V drain-source voltage, 100A continuous drain current, 9.5mΩ typical RDS(ON) at VGS=10V, and 370W power dissipation in TO-220-3L package. |
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NCE15H10
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NCEPOWER
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NCE15H10 is a channel enhancement mode power MOSFET with 150V drain-source voltage, 100A continuous drain current, and low on-resistance of 9.8mΩ typical at VGS=10V, suitable for switching applications. |
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S6125-H-1.0A
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SATE
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Surface Mount Fuses S6125-H Series, 6.1mm x 2.5mm ceramic body, high inrush withstand, RoHS compliant, operating temperature -55℃ to 125℃, current rating 0.5A to 5A, voltage rating 125V. |
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AK15H10D
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK15H10D with 150V drain-source voltage, 100A continuous drain current, 9.5mΩ typical RDS(ON) at VGS=10V, and 370W power dissipation in TO-263-2L package. |
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AK15H10TA
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK15H10TA with 150V drain-source voltage, 100A continuous drain current, and 9.5mΩ typical RDS(ON) at 10V VGS, designed for high-frequency switching and power control applications. |
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T835H-10F
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Jiangsu JieJie Microelectronics Co Ltd
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8A TRIAC with 1000V repetitive peak off-state and reverse voltage, suitable for AC switching applications, featuring high surge current capability, 150°C maximum junction temperature, and TO-220F insulated package. |
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SB5H100
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SUNMATE electronic Co., LTD
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Schottky barrier rectifier diode in DO-201AD case with 90-100V peak reverse voltage, 5.0A average forward current, 200A surge current, low forward voltage, and high surge capability for use in high frequency and power applications. |
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NCE15H10A
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NCEPOWER
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NCE15H10A is a 150V, 100A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 9.5mΩ at VGS=10V, suitable for switching applications requiring high efficiency and thermal performance. |
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AK15H10
