5F TRANSISTOR Search Results

Contextual Info: "34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC MICRO-T continued dF J b3t,7ES5 (DIODES/OPTO) 34C CI03a202 38202 D r - 5f- n MMT74 — NPN RF AMPLIFIER TRANSISTOR • designed for high-gain, low-noise amplifier, oscillator and mixer applications. TOP

Contextual Info: MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half-bridge configu­ ration with each transistor having

bc807

Abstract: BC808 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC807B
Contextual Info: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M arking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38

Contextual Info: mNEHEX CM45QHA-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Single IGBTMOD 450 Amperes/250 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

Contextual Info: mßmnEx CM600HA-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1900 724 925-7272 Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

Contextual Info: CM200TU-5F m Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 TtOflCh GcitO DGSÍQfl Six IGBTMOD 200 Amperes/250 Volts D escription: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Features ■ Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F

Contextual Info: CDU BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor Marking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0_ 2.8 0.14 0.09 0.48

Contextual Info: noNm Products P»g« Type Semiconductor IC BA 0 5F P 1/9 STRUCTURE Silicon Monolithic Integrated circuit TYPE Low-Dropout Three-Terminal Positive Voltage Regulator PRODUCT SERIES B PHYSICAL DIMENSIONS Fig-1 BLOCK DIAGRAM Fig-2 FEATURES 1.Maximum output current 1A.

2SK3546G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name

motorola U310

Abstract: DFM145 U310 MOTOROLA
Contextual Info: MOT OROL A SC Im 5F |b3t> 7S S 5 0030 047 b í DIODES/OPTO> t 6367255 MOTOROLA SC DIODES/OPTO 3^c 38047 T " 1( FIELD-EFFECT TRANSISTORS DICE (continued) ~ Q 2S~ UC310 DIE NO. LINE SOURCE — DFM145 This die provides performance equal to or better than that of

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain

2SK3547G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name

IGBT 350A

Abstract: CM350DU-5F igbt mitsubishi 520 ac C2E1 IGBT module 700a
Contextual Info: MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE A B TC Measured Point K 4 - Mounting Holes E H D J C F CM H R 3 - M6 NUTS Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te

T8A250V

Abstract: 800w power inverter circuit diagram NEMIC LAMBDA supply Circuit diagram transistor Arm 3055 equivalent coutant coutant power supply 5V nc302 zener diode for 240v ac voltage remote control LAMBDA zup
Contextual Info: GLOBAL NETWORK Europe / North America Asia / Far East / Middle East NORTH AMERICA Lambda Americas, Inc. 3055 Del Sol Boulevard San Diego, CA 92154 Tel: +1-800-LAMBDA-4 Tel: +1-619-575-4400 Fax: +1-619-429-1011 www.lambdapower.com Densei Lambda KK, 5F Dempa Bldg, 1-11-15 Higashigotanda,

CM350DU-5F

Abstract: igbt mitsubishi 520 ac IGBT module 700a forklift transistor 350A
Contextual Info: MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE A B TC Measured Point K 4 - Mounting Holes E H D J C F CM H R 3 - M6 NUTS R Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

2SK3539G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain Th an W is k y

via VT8237A

Abstract: K8N890 bq24721 VT6103L IT8512E-L vt1634 vt8237 Inventec npn transistor w16 w25 transistor smd
Contextual Info: 5 4 3 2 1 Inventec Corporation R&D Division D D C C Board name : Mother Board Schematic Project : E25 Version : A02 MV Build Initial Date : Jan 1 , 2006 B B A A Inventec Corporation 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na

IGBT module 700a

Abstract: CM350DU-5F
Contextual Info: CM350DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts A B TC Measured Point K 4 - Mounting Holes E H D J C F CM H R 3 - M6 NUTS R Description: Powerex IGBTMOD™ Modules

IT8512E-L

Abstract: ITE 8512 w25x80vssig bq24721 Inventec 28c43 KBC-ITE-8512 G5240B1T1U PZ6382A-284S-41F transistor C547 npn
Contextual Info: 5 4 3 2 1 Inventec Corporation R&D Division D D C C Board name : Mother Board Schematic Project : E25 Version : A02 MV Build Initial Date : Jan 1 , 2006 B B A A Inventec Corporation <OrgAddr4> 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan

CM350DU-5F

Contextual Info: CM350DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts A B TC Measured Point K 4 - Mounting Holes E H D J C F CM H R 3 - M6 NUTS R Description: Powerex IGBTMOD™ Modules