5F TRANSISTOR Search Results

Contextual Info: MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half-bridge configu­ ration with each transistor having

bc807

Abstract: BC808 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC807B
Contextual Info: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M arking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Features ■ Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F

Contextual Info: CDU BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor Marking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0_ 2.8 0.14 0.09 0.48

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain

T8A250V

Abstract: 800w power inverter circuit diagram NEMIC LAMBDA supply Circuit diagram transistor Arm 3055 equivalent coutant coutant power supply 5V nc302 zener diode for 240v ac voltage remote control LAMBDA zup
Contextual Info: GLOBAL NETWORK Europe / North America Asia / Far East / Middle East NORTH AMERICA Lambda Americas, Inc. 3055 Del Sol Boulevard San Diego, CA 92154 Tel: +1-800-LAMBDA-4 Tel: +1-619-575-4400 Fax: +1-619-429-1011 www.lambdapower.com Densei Lambda KK, 5F Dempa Bldg, 1-11-15 Higashigotanda,

CM350DU-5F

Abstract: igbt mitsubishi 520 ac IGBT module 700a forklift transistor 350A
Contextual Info: MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE A B TC Measured Point K 4 - Mounting Holes E H D J C F CM H R 3 - M6 NUTS R Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

8C808

Abstract: bc807 BC808-25 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-40 BC807 5C
Contextual Info: BC807 BC808 CDÎL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistor Marking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PA C K A G E O U TLIN E D ETA ILS A L L D IM EN SIO N S IN m m 3.0 0.14

Contextual Info: CM400DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Dual IGBTMOD 400 Amperes/250 Volts TC MEASURE POINT A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q K Q K H U C1 P

IGBT 100V 200A

Contextual Info: CM200TU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts A B F E G H E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u

CM450HA-5F

Abstract: charge forklift
Contextual Info: CM450HA-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Single IGBTMOD 450 Amperes/250 Volts A B D E C Q - THD. (2 TYP.) S E R E R C G F G P - THD. (2 TYP.) H M N - DIA. (2 TYP.) J L LABEL K E E

Contextual Info: BC807 BC808 HL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M arking P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m BC807 = 5D BC807-16 = 5A BC807-25 « 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G

Contextual Info: CM600DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD F-Series Module 600 Amperes/250 Volts A D TC Measured Point F T - (4 TYP.) H G2 E2 CL B E R CM C2E1 J E2 E1 C1 G1 25 25 XH Q S - NUTS (3 TYP) Q P

Contextual Info: ROHM CO LTD 5f*—x - f MQZ D EM 7 0 2 0 * ^ □0 04 b lb IC /IC s for Audio Applications 2 BRHM BA5404 7 - 7 7 -2 1 12V-360mW v > ^ V U / \07 - 7 7> 7 ° 12V-360mW Single Power Amplifier • ftJfé^ì& S il/D iniensions Unit : mm BA5404 ( i, 1 Ü 1 Œ 1 2 V ,Rl32 n

Contextual Info: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M ark in g P A C K A G E O U T L IN E D E T A IL S BC807 = 5D A L L D IM E N S IO N S IN m m B C 8 0 7 -1 6 - 5A B C 807-25 * 5B BC807-40 = 5C 3.0 BCB08 - 5H 2.8 0.48 B C 808-16 - 5E B C 808-25 = 5F

D1D5B

Abstract: B175D DIODE ED 99
Contextual Info: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC   I9 0( J .&/ Y" 0( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 

B55Q

Contextual Info: IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R  , ? >=1H-(     )(&0 Y" 0+ I9 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#

pt1017

Abstract: mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490
Contextual Info: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 12-132 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 133-239 3.6 EC SI Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240-253

diode b1c

Contextual Info: SK 80 MBBB 055 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET G<BB GQBB T< T<D ?- K PM N$I 407,- %*8,23.-, -', .6.,+ ?- K PM ;LS> N$U V> *' Y V &-U ?- K PM ;LS> N$U ?¥ Inverse diode SEMITOP 3 MOSFET Module T_ K @ T< T_D K @ T<D ?- K PM ;LS> N$U

Contextual Info: P » » .I « T O W PJD882/PJD882S NPN Epitaxial Silicon Transistor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-92 • • • TO-126 Complement to PJB772 PW 10ms,Duty Cycle 50%Pulse Test PW 350" s, Duty Cycle 2% ABSOLUTE MAXIMUM RATINGS Ta = 25 °C

5f transistor

Contextual Info: P » » .I « T O W PJB772/PJB772S PNP Epitaxial Silicon Transistor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to PJD882 • PW 10#s,Duty Cycle 50% • Pulse Test PW 350#s,Duty Cycle 2% TO-92 TO-126 PJB772S PJB772 ABSOLUTE MAXIMUM RATINGS Ta = 25 °C

12 pin stereo amplifier with heat sink

Abstract: high Power audio amplifier btl class Discrete Class D High Power Audio Amplifier LY8361F LY8361
Contextual Info:  LY8361 Rev. 1.4 27Wx2 BTL Stereo / 8Wx2(SE)+27Wx1(BTL) 2.1CH / 10Wx4(SE) 4CH / 50Wx1(PBTL) Mono with DC Volume Class D Audio Power Amplifier DC volume control with 32 steps. Over-Heat protection with automatic recovery. Under-voltage and Over-voltage detection.

24v amplifier circuit board

Contextual Info:  LY8366F 30Wx2 BTLx2 Stereo / 11Wx2(SE)+37Wx1(BTL) 2.1CH / 16Wx4(SEx4) / 70Wx1(PBTL) Mono Class D Audio Amplifier Rev. 1.1 Under-voltage and Over-voltage detection. Short protection with automatic recovery. Mute function selectable. Lead free and green package available.

BCD Semiconductor

Abstract: transistor 2808 voltage to bcd
Contextual Info: Preliminary Datasheet HIGH VOLTAGE NPN TRANSISTOR APT17 General Description Features The APT17 is high voltage, small signal NPN transistor. • Applications The APT17 is available in SOT-23 and TO-92 packages. SOT-23 High Collector-Emitter Voltage: 480V High Voltage and Low Standby Power Circuit for