5D J MARKING Search Results

Contextual Info: I CMBD914 HIGH SPEED SWITCHING DIODE Marking CMBD914 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.1 4 0.70 0.50 Pin configuration "1 1.4 1 = ANODE 2 = NC 3 = CATHODE 1.2 J 0.12 0.02 ABSOLUTE MAXIMUM RATINGS Continuous reverse voltage Forward current

Contextual Info: SN54LVTH574, SN74LVTH574 3.3-V ABT OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS SCBS688E – MAY 1997 – REVISED AUGUST 2001 D D D D D SN54LVTH574 . . . J OR W PACKAGE SN74LVTH574 . . . DB, DW, OR PW PACKAGE TOP VIEW OE 1D 2D 3D 4D 5D 6D

Contextual Info: SN54LV573A, SN74LV573A OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS SCLS411E – APRIL 1998 – REVISED AUGUST 2001 D D D D SN54LV573A . . . J OR W PACKAGE SN74LV573A . . . DB, DGV, DW, NS, OR PW PACKAGE TOP VIEW OE 1D 2D 3D 4D 5D 6D 7D 8D GND 1

lxh574

Contextual Info: SN54LVTH574, SN74LVTH574 3.3-V ABT OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS SCBS688E – MAY 1997 – REVISED AUGUST 2001 D D D D D SN54LVTH574 . . . J OR W PACKAGE SN74LVTH574 . . . DB, DW, OR PW PACKAGE TOP VIEW OE 1D 2D 3D 4D 5D 6D

Contextual Info: SN54LV574A, SN74LV574A OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS SCLS412E – APRIL 1998 – REVISED AUGUST 2001 D D D D SN54LV574A . . . J OR W PACKAGE SN74LV574A . . . DB, DGV, DW, NS, OR PW PACKAGE TOP VIEW OE 1D 2D 3D 4D 5D 6D 7D 8D

Contextual Info: SN54LVTH573, SN74LVTH573 3.3-V ABT OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS SCBS687F – MAY 1997 – REVISED JULY 2001 D D D D D SN54LVTH573 . . . J OR W PACKAGE SN74LVTH573 . . . DB, DW, OR PW PACKAGE TOP VIEW OE 1D 2D 3D 4D 5D 6D 7D 8D GND

LXH573

Contextual Info: SN54LVTH573, SN74LVTH573 3.3-V ABT OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS SCBS687F – MAY 1997 – REVISED JULY 2001 D D D D D SN54LVTH573 . . . J OR W PACKAGE SN74LVTH573 . . . DB, DW, OR PW PACKAGE TOP VIEW OE 1D 2D 3D 4D 5D 6D 7D 8D GND

5d marking

Abstract: 5d mark 5D j marking marking 5d
Contextual Info: SEMICONDUCTOR PG05DXTE6 MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking 5D 1 0 1 2. Marking 2 3 No. Item Marking Description Device Mark 5D PG05DXTE6 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index

diode t 5d

Abstract: tim 5f diode 5d MARKING 5D DIODE 5dl2c
Contextual Info: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage

l2c48

Contextual Info: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage

5dl2c

Contextual Info: TOSHIBA 5DL2C48A,5FL2C48A,U5DL2C48A,U5FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive Peak Reverse Voltage

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

dual diode A7 W

Contextual Info: Small Signal Diodes SOT23 Type Ratings miniBag Order Number Number l RR Max CD Part Marking A6 A8 A841 A82 L20 D01/5D D18 Max Schematic Single Diode BAS 16 BAS19 BAS20 BAS21 BAS29 MMBD914 MMBD4150 72-0016 72-0019 72-0020 72-0021 72-0029 72-0914 72-4150 500 pc.

5d marking

Abstract: MARKING J1A SD914
Contextual Info: SD914 HIGH SPEED SWITCHING DIODE Marking SD914 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0 .14 0.09 0.48 'I 0.38 _L 0.70 0.50 Pin configuration 2.6 1 = ANODE 2 = NC 3 = CATHODE 1.4 1.2 2.4 R0.1 •004 ' /fv R 0 .0 5 _1.02 _ -W 0.12 0.02

13c MARKING

Abstract: marking code 5y CMSH3-40 MARKING CODE 8Y CMZ5936B marking code c20a marking wc 8N Marking code CS CGDM marking code 4A
Contextual Info: Marking codes Marking Code Part Number Marking Code Part Number Marking Code Part Number 1 A BC846A 4B BC859B 8 AC CMSZ5226B 1 A8 CMSZ5250B 4C BC859C 8 B1 CMSZ5222B 1 B BC846B 4E BC860A 8 BC CMSZ5227B 1 B8 CMSZ5251B 4F BC860B 8 C1 CMSZ5223B 1 C8 CMSZ5252B

Contextual Info: Indicator Cylindrical 16-dia. M16 CSM_M16_DS_E_6_1 Cylindrical 16-dia. Indicator • Same basic design as the A16 Pushbutton Switch. Refer to Safety Precautions for All Pushbutton Switches and Safety Precautions on page 11. List of Models Appearance Solder

M165-A-24D

Contextual Info: Indicator Cylindrical 16-dia. M16 CSM_M16_DS_E_4_1 Cylindrical 16-dia. Indicator • Same basic design as the A16 Pushbutton Switch. Refer to Safety Precautions for All Pushbutton Switches and Safety Precautions on page 11. List of Models Appearance Solder

diode MARKING M16

Abstract: M16T M165-T-24
Contextual Info: Indicator Cylindrical 16-dia. M16 CSM_M16_DS_E_5_1 Cylindrical 16-dia. Indicator • Same basic design as the A16 Pushbutton Switch. Refer to Safety Precautions for All Pushbutton Switches and Safety Precautions on page 11. List of Models Appearance Solder

Contextual Info: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION • • 2.1 ± 0.1 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : VF = 0.23V TYP. @Ijr = 5mA

33P33

Contextual Info: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION • • 2.1 ± 0.1 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : VF = 0.23V TYP. @Ijr = 5mA

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBD914 HIGH SPEED SWITCHING DIODE Marking CMBD914 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBD914 HIGH SPEED SWITCHING DIODE Marking CMBD914 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE

smd diode marking 5d

Abstract: smd diode 5d diode 5d smd diode smd marking 5D smd transistor marking 5D CMBD914
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBD914 HIGH SPEED SWITCHING DIODE Marking CMBD914 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1

JP303

Contextual Info: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01F Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION + • • 2 -8 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vp = 0.23V TYP. @Ijr = 5mA 0.2 0.3 + 0.2