5CS 13 Search Results

9470

Abstract: 9470MHz filter 9350M
Contextual Info: JXWBLB-T-BP-9470-160-5CS 9470MHz Cavity Band Pass Filter Test report is for reference only. TEST REPORT For JXWBLB-T-BP-9470-160-5CS 1 JXWBLB-T-BP-9470-160-5CS 9470MHz Cavity Band Pass Filter Technical Specification Center Frequency f0 (MHz) 9470 1dB Band Width(BW)(MHz)

5Cs transistor

Abstract: 2X40
Contextual Info: JXWBLB-T-BP-1200-40-5CS 1200MHz Cavity Band Pass Filter Test report is for reference only. TEST REPORT For JXWBLB-T-BP-1200-40-5CS 1 JXWBLB-T-BP-1200-40-5CS 1200MHz Cavity Band Pass Filter Technical Specification 1180~1220 Frequency Range MHz 3 max (1180~1220MHz)

1027G

Abstract: 947g 16602
Contextual Info: JXWBLB-T-BP-9770-160-5CS 9770MHz Cavity Band Pass Filter Test report is for reference only. TEST REPORT For JXWBLB-T-BP-9770-160-5CS 1 JXWBLB-T-BP-9770-160-5CS 9770MHz Cavity Band Pass Filter Technical Specification Center Frequency f0 (MHz) 9770 1dB Band Width(BW)(MHz)

BJ79TL

Abstract: BJ379 PL75 twinax BJ74FL
Contextual Info: RED INDICATES ORIGINAL □ASH NO CDNNECTDR MATERIAL TYPE PL75 -1 CJ70 -2 BJ79 -3 BJ74 -4 -5CS PL375C S ) -5CS> CJ370 S > -7<S> BJ379< S > -BCS) BJ374C S > -a PL74 -10 CJ70TL -li BJ79TL BJ74TL -12 -13 PL75FL CJ70FL -14 -15 BJ79FL -IB BJ74FL PL73 -17 FIG 10

ic 437

Contextual Info: RED INDICATES ORIGINAL DATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TD TRDHPETER ELECTRONICS INC. AND SHALL NOT BE DISCLOSED, CDPIEB DR USED FDR PROCUREMENT DR MANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION, -1 PL75 -2 CJ70 BJ79 -3 -4 BJ74 -5CS PL375CS >

R437

Abstract: Trompeter 305 CJ70FL
Contextual Info: DWG SIZE DASH CDNNECTDR MATERIAL A \ TYPE ND -1 -2 -3 -4 -5CS -6<S> -7 S) -BCS) -g -10 -il -12 -13 -14 -15 -16 -17 PL75 CJ70 BJ79 BJ74 PL375C S > CJ370C S ) BJ379C S > BJ374CS ) PL74 CJ70TL BJ79TL BJ74TL PL75FL CJ70FL BJ79FL BJ74FL PL73 310-0002-24 3-0043-24

LT1164-5

Abstract: LT1164 sol 16 LTC1164-5CS
Contextual Info: SPECIFICATION NOTICE LT1164-5 July 1996 The LTC 1164-5 data sheet has been changed from Rev 0 to Rev A. The key change is that the pinout for the LTC1164-5CS had an error. Pins 9 and 10 were swapped. The correct version is shown below. , LTC and LT are registered trademarks of Linear Technology Corporation.

Balluff BOS 18K

Abstract: powerful LED 650nm sensor balluff BLS Balluff inductive sensor Balluff Balluff price 3 pin horizontal potentiometer pin connection powerful 650nm LED balluff 18 inductive proximity sensor balluff
Contextual Info: The 18K Laser Series Laser Sensors for Any Application A New Level of Affordability and Safety Tubular Optical Sensors BOS 18K Laser Technical Description Safety and affordability are the two key ingredients of the 18K Laser family of optical sensors. For the first time, a

marking 5CT sot-23

Abstract: 5Ct marking code marking code 5cs marking 5Cs BC807-40/5C code marking 5Ct sot-23 MARKING 5ct 5CS marking code sot 23 5Ct marking code sot 23 BC818
Contextual Info: BC807 / BC808 BC807 / BC808 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2007-04-13 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

Contextual Info: 6 REV. EC# A ECR—04154 8 DESCRIPTION DRAWN DATE NEW RELEASE JUDY 12/02/02’ CHECKED APPROVED - MAX 13 1.2 ÏJ ^ B □ Il PRODUCT NUMBER ORDER 1 2 1 5 4 0 -* © nn © i . 1 0 CD©© PRODUCTION CODE : 1 : RCA PLUG 90‘ PORT: 2: 2 PORT 8.75 12.5 © WASHER COLOR :

5Ct transistor

Abstract: 5Cs transistor transistor 5ct marking 5Ct sot transistor 5cs 5Ct marking code marking 5cs marking code 5cs MARKING 5cR MARKING 5ct
Contextual Info: BC807-16W/25W/40W 200mW, PNP Small Signal Transistor Small Signal Diode SOT-323 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish with Nickel(Ni) underplate

RW55V

Abstract: ate 3cs ate 10cs RW56V
Contextual Info: CS SERIES EN 2010 7 Wirewound resistors silicone coated 2 W to 15 W s rie Se FEATURES S C WIREWOUND RESISTORS SILICONE COATED 2 W TO 15 W Easy replacement of vitreous enamel resistors with no cost increase and no performance loss. The whole assembly is coated with multi-layer silicone coating to give

5Ct transistor

Abstract: 5Cs transistor transistor 5ct
Contextual Info: BC807-16W/25W/40W 200mW, PNP Small Signal Transistor Small Signal Diode SOT-323 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 D ­Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: KM736FV4011 KM718FV4011 PRELIMINARY 128Kx36 & 256Kx18 SRAM 128Kx36 & 2 56 Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Rev. 0.0 - Preliminary specification release Rev. 0.1 - Change specification format. No change was made in parameters.

5Cs transistor

Abstract: 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs
Contextual Info: BC807./ BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN Type Marking Pin Configuration BC807-16

5Cs transistor

Abstract: BC 170 transistor TRANSISTOR BC 807w Q62702-C2328
Contextual Info: PNP Silicon AF Transistor ● ● ● ● ● BC 807W BC 808W For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817W, BC 808W NPN 2 3 1 Type BC 807-16W BC 807-25W BC 807-40W

Trompeter 305

Abstract: 7524D5011 TAI-189
Contextual Info: BED INDICATES ORIGINAL DATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO TROMPETER ELECTRONICS INC, AND SHALL NDT BE DISCLOSED, COPIED DR USED FOR PROCUREMENT DR MANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION. MTG ASSEMBLE FIG HOLE PER FIG — 310-0002-9 1A

Contextual Info: VF561 XO VF561 PECL Compatible Surface Mount Clock Oscillator FEATURES • Wide Frequency Range Param eter M ax Unit Input Break Down Voltage Symb Vcc -0 .5 7.0 V Storage Temp. Ts -5 5 + 125 °C Frequency Range F 15 300 MHz Frequency Stability AF/F ±100 ppm

marking 5bs

Abstract: BC818W VSO05561 BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W
Contextual Info: BC807W, BC808W PNP Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking Package

Contextual Info: KANTHAL v6Siwiu i Hi;. P.O. Box 339 3425 Hyde Park Blvd. Niagara Falls, New York 14302 Telephone 716-286-7610 G LOBAR A Sandvik Company Non-Inductive Bulk Ceramic Resistors Cnu *7-1C OOC 7CiH I a A f IU"£.UU" f UU 1 Product Information Cesiwid bulk ceramic resistors are

5Cs transistor

Abstract: Q62702-C2328 C2328 transistor C2330 transistor 5cs transistor 5bs Q62702-C2330 c2330 1B marking transistor TRANSISTOR C2328
Contextual Info: BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN Type Marking Ordering Code Pin Configuration Package

5Cs transistor

Abstract: transistor 5bs 5BS transistor
Contextual Info: SIEMENS BC 807W BC 808W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN Type Marking Ordering Code Pin Configuration

Q62702-C2325

Contextual Info: SIEMENS BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain * Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN 2 Q62702-C2325 1 =B BC 807-25W 5Bs Q62702-C2326

GL1100A

Abstract: 3AA BATTERY BOX gf650 gl-1100 D6082
Contextual Info: As electronics technology becomes more and more advanced, your markets demand a higher level of sophistication in convenient, portable products. These increasing demands are placing more stringent requirements on rechargeable batteries. Gates Energy Products nickel-cadmium cells offer