5CI TRANSISTOR Search Results

FPE100

Abstract: FPT610 fpe500 FPT570 FPE104 FPE106 FPE510 FPE520 FPT550A FPT560
Contextual Info: FAIRCHILD OPTOELECTRONICS r - OPTO PHOTO TRANSISTORS DEVICE Item NO. Cont’d Description v CEO lc = 1.0mA V Min Typ •CE(lt) VCE = 5.0V mA Min Typ Max VcE(sat) H = 20mW/cm2 V Min Typ Max Typ Package No. 18 0pto-30 tr/tf /US

BT4124

Contextual Info: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SM BT4124 sZ C Q68000-A8316 B SOT-23 E C Maximum Ratings

OF TRANSISTOR BC337

Abstract: BC337 leads
Contextual Info: BC337 VISHAY NPN EPITAXIAL PLANAR TRANSISTOR / u T E M ir I POWER SEMICONDUCTOR J Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation E J L A TO-92

BF337

Abstract: 2N5832 BF336 2N5058 bf338 se7055 FAIRCHILD TO-106 se7056 BD115 PE7058 transistor
Contextual Info: FAIRCHILD TRANSISTORS S M A L L S IG N A L HIGH VOLTAGE AMPLIFIER TRANSISTORS BY ASCENDING VcEO VCEO Item DEVIC E NO. Poliirity NPN PNP hFE »T @ ic V Min Min/Max mA MHz Min Pd C0b pF Max (Confd) Ta 25° C mW TC 25° C W Package No. 1.79 TO-92 1 BC533 160

BF336

Abstract: PE7058 transistor SE7055 BF338 2N5832 SE7056 BD115 BF152 fairchild to-106 2N5059
Contextual Info: FAIRCHILD TRANSISTORS PO W ER Item IC = 0.1 A 0» @ lc m VCEO hFE V Max Mln/Max o DEVICE NO. Polarity NPN PNP < POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING VQEO V Max @ ic A *T MHz Min(Typ) PD(Max) W T C= 25°C Package No. A Max Continuous 1 BF257

KSA634

Abstract: transistor FS 20 SM KSC1096 KSD18 KSD1891 D01002 KSB1151 SO-330 F33-C transistor bI 240
Contextual Info: SAMSUNG SEMICONDUCTOR INC ^ KSB1151 14E D | T 'ìt M lM à QaO?S5fl PNP EPITAXIAL SILICON TRANSISTOR T LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT - Ì 3 - Ì ? TO-126 HIGH POWER DISSIPATION: PT=1.3W <T.=25°C Complementary to KSD1891 ABSOLUTE MAXIMUM RATINGS Ta=25°C)

2SC2995Y

Contextual Info: TOSHIBA 2SC2995 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS ? < ; r 7 Q Q <5 Unit in mm F M / A M RF, M IX , OSC, IF HIGH FREQUENCY AMPLIFIER APPLICATIONS. 4.2MAX. • • High stability Oscillation Voltage On FM Local Oscillator. Recommend FM /AM RF, MIX, OSC and IF.

TTPC

Abstract: BUK474-500B rm3 transistor BUK474
Contextual Info: Philips Components Data sheet status Preliminary specification date of issue March 1991 INTERNATIONAL N -channel en han cem en t m ode field-effect pow er transistor in a plastic full-pack envelope. T h e device is intended for use in Switched M ode P ow er Supplies

MTM5N40

Abstract: mtp5n40 MTP5N40E 221A-06 AN569
Contextual Info: b 3 b 7 2 5 H D [ H a 5 S 2 HIT • H 0 T b bflE D M O T O R O L A SC X S T R S / R F MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA M TM 5N40 *MTP5N40E Designer's Data Sheet •Motorola Preferred Device Pow er Field Effect Transistor N-Channel Enhancem ent-Mode

Contextual Info: Philips Semiconductors bbSB'lBl 00300^7 38b • APX Product specification UHF power MOS transistor BLF522 N AMER PHILIPS/DISCRETE FEATURES b'lE » PIN CONFIGURATION • High power gain o • Easy power control - ''l • Gold metallization • Good thermal stability

Contextual Info: ATF-44100 AT-8141 2-8 GHz Medium Power Gallium Arsenide FET Wfijm HEWLETT mLfim PACKARD Chip Outline Features • • • High Output Power: 32.0 dBm typical Pi dBat 4 GHz High Gain at 1 dB Compression: 9.0 dB typical Gi dB at 4 GHz High Power Efficiency:

philips blx14

Abstract: BLX14
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 DQ2TSbl T52 I BLX14 H .F./V .H .F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, AB and B operated transmitting equipment in the h.f. and v.h.f. band. • rated fo r 50 W P.E.P. at 1,6 MHz to 28 MHz

TBA311

Abstract: TCA511 TCA 420 s0212 vertical section horizontal section of tv and the block diagram transistor horizontal section tv s0214
Contextual Info: TCA 511 LINEAR INTEGRATED CIRCUIT TV HORIZONTAL AND VERTICAL PROCESSOR The TCA 511 is a silico n m on olithic integrated circ u it in a 16-lead dual in -lin e plastic package. It incorporates the follow ing fun ctions: high sta b ility horizontal oscilla to r,

Contextual Info: c Overdrive-Protected Wideband Op Amp i. -i- • ir „H i APPLICATIONS: FEATURES: • • • • • • • • • • • • • fast, precision A /D conversion automatic test equipment input/o u tp u t amplifiers photodiode, CCD preamps IF processors

marking se sot 23-5

Abstract: U G N 3140 sensor transistor tic 2260 MARKING VA SOT-23-5 TK71635
Contextual Info: r& TO K O TK716xx LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS • Available in ± 2.0 % or ± 1.0 % Output Tolerance ■ Battery Powered Systems ■ Active High On/Off Control ■ Cellular Telephones ■ Very Low Quiescent Current ■ Pagers ■ Very Low Dropout Voltage

marking R5C

Abstract: marking a hA packages SC70-5 sot23-5 marking ha marking c7 sot-23-5 transistor R5C 5-30V LMV331 LMV339 LMV393 SC70-5
Contextual Info: & Semiconductor LMV331 Single / LMV393 Dual / LMV339 Quad General Purpose, Low Voltage, TinyPack Comparators General Description Features The LM V393 and LM V339 are low voltage 2.7-5V versions of th e dual and quad com parators, LM 393/339, w hich are specified at 5-30V. The LMV331 is the single version, which

CI SG3524

Contextual Info: IN T E G R A T E D C IR C U IT S UC1524 UC2524 UC3524 U N IT R O D E Advanced Regulating Pulse Width Modulators DESCRIPTIO N FEATURES Complete PWM Power Control Circuitry • Uncommitted Outputs for Single-ended or Push-pull Applications • Low Standby Current. 8mA

Contextual Info: M ITSU BISH I M IC R O C O M P U T E R S M37733EHLXXXHP . PROM VERSION OF M37733MHLXXXHP DESCRIPTION • S in g le pow er s u p p ly . 2 .7 -5 .5 V The M 37733E H LX X X H P is a single-chip m icrocom puter using the

DIP42S

Abstract: LC66304A LC66599 LC66E308 QIP48E rom 512x4 cms ZF1 LC66404 date code Sanyo semiconductor 3113B FLAN Series murata
Contextual Info: Ordering num ber:EN3113B CMOS LSI No.3i 13b I LC66304A,66306A,66308A r S A i IÌ Y 4K /6K /8K -B Y TE ROM -CON TAIN ED SIN G LE-C H IP 4-BIT M ICRO CO M PU TER FO R C O N T R O L-O R IE N T ED A P P LIC A T IO N S

Contextual Info: IM P O R T A N T N O TIC E All new designs should use XC3000A or XC3100A. Information on XC3000 and XC3100 is presented here as reference for existing designs. £ x il in x XC3000, XC3000A, XC3000L, XC3100, XC3100A Logic Cell Array Families Product Description

CL100 transistor

Abstract: transistor E 13009 1024x4 bit ram transistor cl100 if6 hall 13009 TRANSISTOR equivalent gm f131 13005 TRANSISTOR HALL EFFECT TRANSISTOR 17S IAIO 3Y
Contextual Info: MIL-M-38510/245A 28 January 1987 _ s u p e r s iin r MIL-H-38510/2455 USAF 5 April 1983 " m ilit a r y spec ific a t io n MICROCIRCUITS, DIGITAL. CMOS, 4096 BIT, STATIC RANDOM ACCESS MEHORY SRAM), BULK SILICON AND SILICON 0# SAPPHIRE This specification 1s approved f ° r use

Contextual Info: Preliminary PM Datasheet PMC-980618 PMC-Sierra, Inc. Issue 2 PM 73487 QRT 622 Mbps ATM Traffic Management Device PM73487 QRT 622 Mbps ATM Traffic Management Device DATASHEET Preliminary Issue 2: October 1998 m room'll DDEisaa 7^? n _ PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE

DIGITAL GATE EMULATOR USING 8085

Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
Contextual Info: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S

IXP2400 and IXP2800 Network Processor Programmer

Abstract: IXP2800 programmers reference manual IXP2850 argus IXP2800 IXP2800 programmer reference manual IXP1200 programming IXP2400 programmers Reference Manual IXP2400 IXP2850 programmer
Contextual Info: IX P 2400/2800 Programming The Complete Microengine Coding Guide Erik J. Johnson Aaron R. Kunze IN TEL PRESS Copyright 2003 Intel Corporation. All rights reserved. ISBN 0-9717861-6-X No part of this publication may be reproduced, stored in a retrieval system or trans­