5BW 63 Search Results

5BW 30

Abstract: C12V st 5bw 12 H278CGD H278CGD5V H278CGDL H278CHD H278CHD5V H278CHDL H278CRD
Contextual Info: L ED A s s y. No . ST A NDA RD H278CBW D H278CGD H278CY D H278CHD H278CRD H278CSRD L OW C URRENT H278CGDL H278CY DL H278CHDL 5 V OL T H278CGD5V H278CY D5V H278CHD5V 12 V OL T H278C5GC12V H278C5GD12V H278C5Y C12V H278C5Y D12V H278C5HC12V H278C5HD12V H278C5RC12V

how to read Maxim date code

Abstract: 5BW 63 DS1992 DS1992L-F5 DS1993 DS1993L-F5 DS9092 DS9093F DS9093RA DS9096P
Contextual Info: 19-4865; Rev 4/11 DS1992/DS1993 1Kb/4Kb Memory iButton SPECIAL FEATURES COMMON iButton FEATURES • •       4096 bits of Read/Write Nonvolatile Memory DS1993 1024 bits of Read/Write Nonvolatile Memory (DS1992) 256-bit Scratchpad Ensures Integrity of Data

Contextual Info: IBM043611QLAB IBM041811QLAB Prelim inary 32K X 36 & 64K X 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • 0.5 Micron CMOS Technology • Synchronous Pipeline Mode Of Operation with Self-Timed Late Write • Single Differential GTL/HSTL Clock • Single +3.3V Power Supply and Ground

Contextual Info: DS1992/DS1993 1kb/4kb Memory iButton www.iButton.com SPECIAL FEATURES § § § § § § § § 4096 bits of Read/Write Nonvolatile Memory DS1993 1024 bits of Read/Write Nonvolatile Memory (DS1992) 256-bit Scratchpad Ensures Integrity of Data Transfer Memory Partitioned into 256-bit Pages for

Contextual Info: 19-4865; Rev 4/11 DS1992/DS1993 1Kb/4Kb Memory iButton SPECIAL FEATURES COMMON iButton FEATURES • •       4096 bits of Read/Write Nonvolatile Memory DS1993 1024 bits of Read/Write Nonvolatile Memory (DS1992) 256-bit Scratchpad Ensures Integrity of Data

transistor 5bw

Abstract: 5AW transistor 5aw sot23 5Ct transistor 5bw marking transistor transistor 5aw marking 5AY 5bw SOT23 5bw transistor 5BW 30
Contextual Info: STM6321, STM6322, STM6821, STM6822, STM6823, STM6824, STM6825 5-pin supervisor with watchdog timer and push-button reset Datasheet −production data Features • Precision VCC monitoring of 5, 3.3, 3, or 2.5 V power supplies ■ RST outputs active low, push-pull or open

CXK77B3640GB

Abstract: SA12 SA13 SA14 SA15 SA16
Contextual Info: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

Contextual Info: SONY CXK77B3641AGB / CXK77B1841AGB 4Mb Late Write LVTTL High Speed Synchronous SRAMs 128K x 36 or 256K x 18 Organization 33/37/5/6 P r e lim in a r y Description The CXK77B3641A (organized as 131,072 words by 36 bits) and the CXK77B1841A (organized as 262,144 words by 18 bits)

TC59S6432bft

Contextual Info: TOSHIBA TENTATIVE TC59S6432BFT/BFTL-80#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORDSX4BANKSX32-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6432BFT/BFTL is a CMOS synchronous dynamic random access memory organized as 524,288words X 4 banks X 32 bits.

bt830

Contextual Info: Bt8340 DS3 Demultiplexer with LAPD Receiver The Bt8340 is a highly integrated DS3 framer and demultiplexer chip that when used with the companion Bt8350 DS3 multiplexer chip provides an efficient trans­ ceiver solution for M13 and M23 applications. The Bt8340 is compatible with

SA-230F5

Abstract: IEC-225 SA-220F5 op102 CD-951V4 microwave detection CG-102R1 SA-400F3 SA-430F5 CD-552R3
Contextual Info: CONTENTS •Selection Guide Selection Guide . 2, 3 Filters SV Series/ SR Series/ SRA Series . 4 to 10

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents