5A1 DIODE Search Results
5A1 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
5A1 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
591-5A1
Abstract: SP9T-SP10T temperature switch 12 vdc
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591-5a1dc-1891-420803a91-430803a+7 | |
591-5A1
Abstract: temperature switch 12 vdc 5A1-520803 d 1667
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591-5a1dc-185a1-5208235a1-530823+8 | |
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Contextual Info: SP9T-SP10T 591-5A1 Latching Terminated | SMA RF Characteristics s DC-18 GHz s Low/Medium Power s 1M Life Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-4 1.20 70 0.20 4-8 1.30 65 0.30 8-12.4 1.40 60 0.40 12.4-18 1.60 55 0.60 Note: Performance may vary depending on selected options |
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sp9t-sp10t591-5a1dc-18sp10t+2 | |
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Contextual Info: SP9T-SP10T 591-5A1 Normally Open Terminated | SMA RF Characteristics s DC-18 GHz s Low/Medium Power s 1M Life Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-4 1.20 70 0.20 4-8 1.30 65 0.30 8-12.4 1.40 70 0.40 12.4-18 1.50 60 0.50 |
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sp9t-sp10t591-5a1dc-18sp10t+2 | |
SP9T-SP10TContextual Info: SP9T-SP10T 591-5A1 Latching | SMA RF Characteristics s DC-18 GHz s Low/Medium Power s 1M Life Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-4 1.20 70 0.20 4-8 1.30 65 0.30 8-12.4 1.40 60 0.40 12.4-18 1.60 55 0.60 Note: Performance may vary depending on selected options |
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591-5a1sp9t-sp10tdc-18sp10t+2 | |
5a1 DIODEContextual Info: SP9T-SP10T 591-5A1 Normally Open | SMA RF Characteristics s DC-18 GHz s Low/Medium Power s 1M Life Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-4 1.20 70 0.20 4-8 1.30 65 0.30 8-12.4 1.40 60 0.40 12.4-18 1.60 55 0.60 Note: Performance may vary depending on selected options |
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591-5a1sp9t-sp10tdc-18sp10t+3 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor M M PQ3725 NPN Silicon JV I a si M otorola Preferred Device JV I 5a1 i II ir v z i 5 Q E H iv= a 3 1 CASE 751B -05, STYLE 4 S O -16 MAXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-E m itter Voltage |
OCR Scan |
pq3725 | |
A476
Abstract: 6937A
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5a693123a718a19aaaa52aa7143+5 | |
WOST05C
Abstract: 15KV WOST12C 5a1 DIODE
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wost04cwost15cot-2318-sep-09+4 | |
SO56-2
Abstract: 11A2 11B2 Diode 9b2 diode diode 1a2 10A1 10A2 11A1 12A1 12A2
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idtqs31621224-bit56-pinqs316212+12 | |
S708
Abstract: TOSHIBA TPS708 TPS708 TLN108 TLN210 Toshiba S708
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tps708tln108940nmtln210+4 | |
zener 6c2
Abstract: zener 4c3 zener 5c1 zener 5A6 zener 5A1 zener 2a7 zener 9A1 4C3 zener 4C7 marking code 5a6 zener
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glz56od-80/do-213aa500mvmil-std-202e+10 | |
STZ8043
Abstract: STZ8200 STZ8043B zener 5c1 1n 53558 STZ8051
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stz8000od-323stz8360astz8360b+11 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification. |
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lbc807-16lt1glbc807-25lt1glbc807-40lt1glbc807+3 | |
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zener 2B1
Abstract: 5c1 zener diode 3A1 zener diode 3A1 Zener zener 5A1 marking code 5b1 zener 4a1 zener 4c1 marking code ZENER marking 3t1
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stz8000od-323stz8390czener 2b1+9 | |
zener 6c2
Abstract: sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C
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bzx84c-bsot-23mil-std-202ezener 6c2+9 | |
zener 2B1
Abstract: marking code ZENER zener 4a1 5c1 zener diode marking code 5b1 zener 5c1 marking 3t1 zener 5A1 STZ8039 5B1 zener diode
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stz8000od-323stz8390czener 2b1+9 | |
IDT74ALVCH32244
Abstract: 7a3 diode
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idt74alvch3224432-bit16-bitalvch32244+1 | |
CBT3383
Abstract: SN74CBT3383C SN74CBT3383CDBQR SN74CBT3383CDBR SN74CBT3383CDW SN74CBT3383CDWR C101
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sn74cbt3383c10bitscds175cbt3383+5 | |
1Bn-12Bn
Abstract: diagram of diode 1a2 10A1 10A2 11A1 11A2 12A1 QS316212
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qs316212qs316221224-bit56-pin+7 | |
5a2 DIODEContextual Info: SN74CBTS16212 24-BIT FET BUS-EXCHANGE SWITCH WITH SCHOTTKY DIODE CLAMPING SCDS036B – DECEMBER 1997 – REVISED MAY 1998 D 5-Ω Switch Connection Between Two Ports D TTL-Compatible Input Levels D Latch-Up Performance Exceeds 250 mA Per D D DGG, DGV, OR DL PACKAGE |
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sn74cbts1621224-bitscds036bmil-std-833+2 | |
IDTQS316209
Abstract: QS316209 TYPE XB2 - B G 4 1 3a29
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idtqs31620918-bit48-pinqs316209+5 | |
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Contextual Info: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH FEATURES: • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc Low propagation delay |
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idtqs31621224-bitqs31621212-bit | |
336b1
Abstract: 1XB2 IDTQS316209 QS316209 8A121 nd445 V1A23
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idtqs31620918-bit48-pinqs316209+8 | |