5A1 DIODE Search Results
5A1 DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
CEZ6V2 |
![]() |
Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
![]() |
Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ12V |
![]() |
Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
![]() |
Zener Diode, 5.6 V, USM | Datasheet | ||
CEZ6V8 |
![]() |
Zener Diode, 6.8 V, ESC | Datasheet |
5A1 DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
591-5A1
Abstract: SP9T-SP10T temperature switch 12 vdc
|
Original |
591-5A1 DC-18 91-420803A 91-430803A 5A1-420823 5A1-430823 5A1-420803A 5A1-430803A 91-420823A SP9T-SP10T temperature switch 12 vdc | |
591-5A1
Abstract: temperature switch 12 vdc 5A1-520803 d 1667
|
Original |
591-5A1 DC-18 5A1-520823 5A1-530823 91-520803A 91-530803A 5A1-520803A 5A1-530803A 91-520823A temperature switch 12 vdc 5A1-520803 d 1667 | |
Contextual Info: SP9T-SP10T 591-5A1 Latching Terminated | SMA RF Characteristics s DC-18 GHz s Low/Medium Power s 1M Life Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-4 1.20 70 0.20 4-8 1.30 65 0.30 8-12.4 1.40 60 0.40 12.4-18 1.60 55 0.60 Note: Performance may vary depending on selected options |
Original |
SP9T-SP10T 591-5A1 DC-18 SP10T coms800 AS9100/ISO-9001: | |
Contextual Info: SP9T-SP10T 591-5A1 Normally Open Terminated | SMA RF Characteristics s DC-18 GHz s Low/Medium Power s 1M Life Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-4 1.20 70 0.20 4-8 1.30 65 0.30 8-12.4 1.40 70 0.40 12.4-18 1.50 60 0.50 |
Original |
SP9T-SP10T 591-5A1 DC-18 SP10T coms800 AS9100/ISO-9001: | |
SP9T-SP10TContextual Info: SP9T-SP10T 591-5A1 Latching | SMA RF Characteristics s DC-18 GHz s Low/Medium Power s 1M Life Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-4 1.20 70 0.20 4-8 1.30 65 0.30 8-12.4 1.40 60 0.40 12.4-18 1.60 55 0.60 Note: Performance may vary depending on selected options |
Original |
591-5A1 SP9T-SP10T DC-18 SP10T AS9100/ISO-9001: coms800 SP9T-SP10T | |
5a1 DIODEContextual Info: SP9T-SP10T 591-5A1 Normally Open | SMA RF Characteristics s DC-18 GHz s Low/Medium Power s 1M Life Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-4 1.20 70 0.20 4-8 1.30 65 0.30 8-12.4 1.40 60 0.40 12.4-18 1.60 55 0.60 Note: Performance may vary depending on selected options |
Original |
591-5A1 SP9T-SP10T DC-18 SP10T AS9100/ISO-9001: coms800 5a1 DIODE | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor M M PQ3725 NPN Silicon JV I a si M otorola Preferred Device JV I 5a1 i II ir v z i 5 Q E H iv= a 3 1 CASE 751B -05, STYLE 4 S O -16 MAXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-E m itter Voltage |
OCR Scan |
PQ3725 | |
A476
Abstract: 6937A
|
Original |
5A693? 123A718A 19AAAA52A A7143 2333A7143 2AAAA7143 19AAA52A A7143 A476 6937A | |
WOST05C
Abstract: 15KV WOST12C 5a1 DIODE
|
Original |
WOST04C WOST15C OT-23 OT-23 18-Sep-09 WOST05C 15KV WOST12C 5a1 DIODE | |
SO56-2
Abstract: 11A2 11B2 Diode 9b2 diode diode 1a2 10A1 10A2 11A1 12A1 12A2
|
Original |
IDTQS316212 24-BIT 56-pin QS316212 12-bit O56-1) SO56-2 11A2 11B2 Diode 9b2 diode diode 1a2 10A1 10A2 11A1 12A1 12A2 | |
S708
Abstract: TOSHIBA TPS708 TPS708 TLN108 TLN210 Toshiba S708
|
Original |
TPS708 TLN108 940nm) TLN210 880nm) S708 TOSHIBA TPS708 Toshiba S708 | |
zener 6c2
Abstract: zener 4c3 zener 5c1 zener 5A6 zener 5A1 zener 2a7 zener 9A1 4C3 zener 4C7 marking code 5a6 zener
|
Original |
GLZ56 OD-80/DO-213AA 500mV MIL-STD-202E zener 6c2 zener 4c3 zener 5c1 zener 5A6 zener 5A1 zener 2a7 zener 9A1 4C3 zener 4C7 marking code 5a6 zener | |
STZ8043
Abstract: STZ8200 STZ8043B zener 5c1 1n 53558 STZ8051
|
Original |
STZ8000 OD-323 STZ8360A STZ8360B STZ8360C STZ8390 STZ8390A STZ8390B STZ8390C STZ8043 STZ8200 STZ8043B zener 5c1 1n 53558 STZ8051 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification. |
Original |
LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape | |
|
|||
zener 2B1
Abstract: 5c1 zener diode 3A1 zener diode 3A1 Zener zener 5A1 marking code 5b1 zener 4a1 zener 4c1 marking code ZENER marking 3t1
|
Original |
STZ8000 OD-323 STZ8390C OD-323 zener 2B1 5c1 zener diode 3A1 zener diode 3A1 Zener zener 5A1 marking code 5b1 zener 4a1 zener 4c1 marking code ZENER marking 3t1 | |
zener 6c2
Abstract: sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C
|
Original |
BZX84C-BS OT-23 OT-23 MIL-STD-202E zener 6c2 sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C | |
zener 2B1
Abstract: marking code ZENER zener 4a1 5c1 zener diode marking code 5b1 zener 5c1 marking 3t1 zener 5A1 STZ8039 5B1 zener diode
|
Original |
STZ8000 OD-323 STZ8390C OD-323 zener 2B1 marking code ZENER zener 4a1 5c1 zener diode marking code 5b1 zener 5c1 marking 3t1 zener 5A1 STZ8039 5B1 zener diode | |
IDT74ALVCH32244
Abstract: 7a3 diode
|
Original |
IDT74ALVCH32244 32-BIT 32-BIT 16-bit ALVCH32244 IDT74ALVCH32244 7a3 diode | |
CBT3383
Abstract: SN74CBT3383C SN74CBT3383CDBQR SN74CBT3383CDBR SN74CBT3383CDW SN74CBT3383CDWR C101
|
Original |
SN74CBT3383C 10BIT SCDS175 CBT3383 SN74CBT3383C SN74CBT3383CDBQR SN74CBT3383CDBR SN74CBT3383CDW SN74CBT3383CDWR C101 | |
1Bn-12Bn
Abstract: diagram of diode 1a2 10A1 10A2 11A1 11A2 12A1 QS316212
|
Original |
QS316212, QS3162212 24-Bit QS316212 56-pin QS3162212 QS316212 1Bn-12Bn diagram of diode 1a2 10A1 10A2 11A1 11A2 12A1 | |
5a2 DIODEContextual Info: SN74CBTS16212 24-BIT FET BUS-EXCHANGE SWITCH WITH SCHOTTKY DIODE CLAMPING SCDS036B – DECEMBER 1997 – REVISED MAY 1998 D 5-Ω Switch Connection Between Two Ports D TTL-Compatible Input Levels D Latch-Up Performance Exceeds 250 mA Per D D DGG, DGV, OR DL PACKAGE |
Original |
SN74CBTS16212 24-BIT SCDS036B MIL-STD-833, 300-mil 5a2 DIODE | |
IDTQS316209
Abstract: QS316209 TYPE XB2 - B G 4 1 3a29
|
Original |
IDTQS316209 18-BIT 48-pin QS316209 DTQS316209 SO48-1) SO48-2) IDTQS316209 TYPE XB2 - B G 4 1 3a29 | |
Contextual Info: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH FEATURES: • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc Low propagation delay |
Original |
IDTQS316212 24-BIT QS316212 12-bit | |
336b1
Abstract: 1XB2 IDTQS316209 QS316209 8A121 nd445 V1A23
|
Original |
IDTQS316209 18-BIT 48-pin QS316209 DTQS316209 SO48-1) SO48-2) 336b1 1XB2 IDTQS316209 8A121 nd445 V1A23 |