5A 40 V SCHOTTKY DIOD Search Results

STPS5L40

Abstract: STPS5L40RL
Contextual Info: STPS5L40 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 40 V Tj (max) 150°C VF (max) 0.44 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY. LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED

STPS5L40

Abstract: STPS5L40RL
Contextual Info: STPS5L40 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 40 V Tj (max) 150°C VF (max) 0.44 V FEATURES AND BENEFITS Negligible switching losses Low forward voltage drop for higher efficiency. Low thermal resistance • ■ ■ DESCRIPTION

FET MARKING QG

Abstract: IRF7901D1 FET MARKING
Contextual Info: PD- 93844B IRF7901D1 • Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 5A Peak Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier Q1 S ource Q1 Gate

FET MARKING QG

Abstract: ON QG FET 6 PIN IRF7901D1
Contextual Info: PD - 93844A IRF7901D1 • Co-Packaged Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck dc-dc converters up to 5A peak output • Low Conduction Losses • Low Switching Losses • Low VF Schottky Rectifier Dual FETKYTM

ECG584 schottky

Abstract: diode ECG109 diode ecg 588 vat 2000 ge ECG575 Z3 DIODE ECG577 Z4 diode Diode ECG110A ECG113
Contextual Info: Diodes and R<£ctifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description ECG109 ECG110A Gen Purp Ge Gen Purp Ge 100 40 ECG110MP Matched Diode Pair Ge 30 ECG112 UHF Mixer (Schottky) Si Common Cathode Si Dual Diode, CenterTap TV Horiz ECG114

SOD123 footprint

Abstract: mosfet sot353 SOT353 footprint SOD523 footprint Philips pmeg PMEG4005EA schottky diodes philips footprint sod323 philips Schottky diode SOD323
Contextual Info: MEGA Schottky diodes Ultra low VF Schottky diodes Our new, low-voltage drop MEGA Schottky diodes offer high performance in extremely small packages. Further extending our discretes portfolio, the MEGA Schottky family is a prime example of Philips’ commitment to continual development of

AP6901GSM

Abstract: AP-690
Contextual Info: AP6901GSM RoHS-compliant Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 S1/D2 G1 ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance SO-8 S2/A G2 D1 D1 CH-2 Description

tc122 20 5 3

Abstract: tc 122 25 5 tc122 25 TC-138 tc122 tc122 25 4
Contextual Info: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline TO-251 EA20QS04 EA20QS06 EA20QS09 EA20QS10 40 60 90 100 1.7 1.7 1.7 1.7 Tc=138℃ Tc=135℃ Tc=139℃ Tc=138℃ 40 40 40 40 0.55 0.58 0.85

71005

Abstract: 100 Volt mosfet schematic circuit OM9005SD OM9006SD
Contextual Info: 43E D OM9005SD OM9006SD [=70^073 Q0DD772 1 • OMNI HERMETIC MOSFET POWER MODULE OMNIREL CORP 160 Watt Power Module, 100/60 Volt, N-Channel MOSFETs With Power Schottky«^ DiodèàAnd High Speed R ectifiers FEATURES • • • • • • • Dual Inline 16 Pin Hermetic Power Package

S11V

Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Contextual Info: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s

ap4810

Abstract: AP4810GSM
Contextual Info: AP4810GSM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL MOSFET WITH SCHOTTKY DIODE ▼ Simple Drive Requirement D D ▼ Good Recovery Time D D G S 30V RDS ON 13.5mΩ ID ▼ Fast Switching Performance SO-8 BVDSS 11A S S D Description Advanced Power MOSFETs from APEC provide the

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MBR1040C Preliminary DIODE 10A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC MBR1040C is a Schottky Barrier Rectifier with high efficiency, low power dissipation and high current capacity. It can be applied in high frequency, low voltage inverters, polarity

Schottky diode TO220

Abstract: DIODE 200A 600V schottky D05S60 diode schottky 600v Q67040S4644 SDT05S60 D05S
Contextual Info: SDT05S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 14 nC • No reverse recovery

Z6 DIODE

Abstract: z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP
Contextual Info: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr

DIODE 1N5822

Abstract: 5a1 DIODE 1N5820-1N5822 1N5820 1N5821 1N5822
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N5820–1N5822 SCHOTTKY BARRIER DIODES TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak Surge Current @ 8.3ms Superimposed Maximum Reverse Current @ PRV @ TA=25ºC

Contextual Info: TP801C04 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics

Contextual Info: MA111 Schottky Barrier Diodes SBD MA769 Silicon epitaxial planer type (cathode common) Unit : mm Repetitive peak reverse voltage VRRM : 150V type ● Sealed in TO-220F full-pack package, with high reliability ● Cathode common dual type Low forward voltage V F

sanken power transistor

Abstract: CF35 SANKEN DIODE 5a schottky axial RW54 B105 10E01 diode ir ALLEGRO MICROSYSTEMS
Contextual Info: Schottky Barrier Diode RW54 July 2006 •General Description ■Package RW54 is an SBD for the high power current of 5A guarantee. Low forward voltage drop and excellent switching characteristics have been achieved. Φ6.5 axial ■Applications •DC-DC converters

Contextual Info: MA111 Schottky Barrier Diodes SBD MA756 Silicon epitaxial planer type (cathode common) Unit : mm Repetitive peak reverse voltage VRRM : 60V type ● Sealed in TO-220F full-pack package, with high reliability ● Cathode common dual type Low forward voltage VF

95026

Contextual Info: 10UT10, 10WT10FN Vishay High Power Products High Performance Schottky Generation 5.0, 10 A 10UT10 FEATURES 10WT10FN • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency

Contextual Info: TP801C04 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics

Contextual Info: 1 2 TO-220 1 - Cathode 2 - Anode Back of Case - Cathode APT5SC120K 1200V 5A 1 2 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly

MA24D52

Abstract: MA24D61 MA24D54 MA24D60
Contextual Info: Newly-developed thin package enables producing slim-electronics products 2 to 5 A class of Schottky Barrier Diode MA24Dxx Series „ Overview This newly developed 2A to 5A type schottky barrier diode is suitable for on-board power supplies and power unit of mobile

Contextual Info: KP823C04 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) 0.9 Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics