5A 40 V SCHOTTKY DIOD Search Results

STPS5L40

Abstract: STPS5L40RL
Contextual Info: STPS5L40 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 40 V Tj (max) 150°C VF (max) 0.44 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY. LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED

STPS5L40

Abstract: STPS5L40RL
Contextual Info: STPS5L40 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 40 V Tj (max) 150°C VF (max) 0.44 V FEATURES AND BENEFITS Negligible switching losses Low forward voltage drop for higher efficiency. Low thermal resistance • ■ ■ DESCRIPTION

STPS5L40

Abstract: STPS5L40-C2
Contextual Info: STPS5L40-C2 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 40 V Tj (max) 150°C VF (max) 0.44 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY. LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED

STPS5L40

Abstract: STPS5L40-C2
Contextual Info: STPS5L40-C2 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 40 V Tj (max) 150°C VF (max) 0.44 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY. LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED

PDS540

Contextual Info: PDS540Q Green Product Summary VR V IF (A) 40 5.0 5A SCHOTTKY BARRIER RECTIFIER POWERDI Features and Benefits VF MAX (V) @ +25°C 0.52 IR MAX (mA) @ +25°C 0.25 • Guard Ring Die Construction for Transient Protection  Low Power Loss, High Efficiency

SD-46 Diode

Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
Contextual Info: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE

schottky diode 60V 5A

Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
Contextual Info: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE

Contextual Info: AO4701 30V P-Channel MOSFET with Schottky Diode General Description Product Summary The AO4701 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional

Contextual Info: Dual N-channel MOSFET with schottky diode ELM14900AA-N •General description ■Features ELM14900AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)

Contextual Info: Dual N-channel MOSFET with schottky diode ELM14906AA-N •General description ■Features ELM14906AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=7A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V)

Contextual Info: AO4900 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4900 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch

Contextual Info: Single P-channel MOSFET with schottky diode ELM14701AA-N •General description ■Features ELM14701AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 49mΩ (Vgs=-10V)

Contextual Info: AO4906 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4906 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch

AO4900

Abstract: AO4900L DIODE SCHOTTKY 60A 45V
Contextual Info: AO4900 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4900 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch

Contextual Info: Dual N-channel MOSFET with schottky diode ELM14904AA-N •General description ■Features ELM14904AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)

AO4904

Abstract: AO4904L
Contextual Info: AO4904 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4904 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and

AO4701

Contextual Info: AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4701 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch.

sony TA-70

Abstract: AO4900 S1 DIODE schottky
Contextual Info: AO4900 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4900 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch

AO4906

Abstract: AO4906L sony TA-70
Contextual Info: AO4906 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4906 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch

AO4902

Abstract: AO4902L
Contextual Info: AO4902 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Features General Description VDS V = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) The AO4902 uses advanced trench technology to provide

Contextual Info: AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4701 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch.

AO4701

Abstract: aos Lot Code Week
Contextual Info: July 2001 AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4701 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the

FET MARKING QG

Abstract: IRF7901D1 FET MARKING
Contextual Info: PD- 93844B IRF7901D1 • Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 5A Peak Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier Q1 S ource Q1 Gate

Contextual Info: LS54/LS545 Surface Mount Schottky Rectifier Reverse Voltage 40/45V Forward Current 5A Features • • • • • • • Schottky barrier diodes Low forward voltage drop Low leakage current Moisture sensitivity: M i t iti it level l l 1, 1 per J-STD-020