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59664945E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| AT-42070Contextual Info: Agilent AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz Description Agilent’s AT-42070 is a general purpose NPN bipolar transistor that | Original | AT-42070 5966-4945E 5989-2654EN | |
| Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz | Original | AT-42070 5965-8912E 5966-4945E | |
| Contextual Info: What 1"UM HEW LETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Tfechnical Data AT-42070 Features different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium | OCR Scan | AT-42070 AT-42070 5965-8912E 59664945E | |
| AT42070
Abstract: AT-42070 S21E 
 | Original | AT-42070 AT-42070 AT42070 RN/50 5965-8912E 5966-4945E S21E |