B5817WSFL
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AK Semiconductor
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Schottky barrier rectifier in SOD-323FL package with reverse voltage ratings of 20V, 30V, and 40V for B5817WSFL, B5818WSFL, and B5819WSFL respectively, 1A average forward current, low forward voltage drop, and high surge capability. |
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B5817WS
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Shikues Semiconductor
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B5817W
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Shikues Semiconductor
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B5817WS
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Shenzhen Heketai Electronics Co Ltd
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Schottky barrier diode in SOD-323 surface mount package with low forward voltage, 20 to 40 V DC blocking voltage, 1.0 A average rectified current, and 25 A surge current capacity, suitable for high frequency inverters and polarity protection. |
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1N5817WS
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AK Semiconductor
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Schottky barrier diode in SOD-323 package with low forward voltage drop, negligible reverse recovery time, and reverse voltage ratings of 20V, 30V, and 40V for 1N5817WS, 1N5818WS, and 1N5819WS respectively. |
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1N5817WS
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Shenzhen Heketai Electronics Co Ltd
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Schottky barrier diode in SOD-323 surface mount package with low forward voltage, 20V to 40V maximum DC blocking voltage, 1.0A average forward rectified current, and operating temperature range from -50 to +125°C. |
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B5817W
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Shandong Jingdao Microelectronics Co Ltd
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Schottky barrier rectifier in SOD-123 package with 20V, 30V, or 40V maximum DC blocking voltage, 1A average forward current, low forward voltage drop, and high surge current capability for surface mount applications. |
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B5817WS
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Shandong Jingdao Microelectronics Co Ltd
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Schottky barrier rectifier in SOD-323 package with maximum DC blocking voltage of 20 to 40 V, average forward current of 1 A, low forward voltage drop, and high surge current capability.Schottky barrier rectifier with 20 V to 40 V maximum DC blocking voltage, 1 A average forward current, low forward voltage drop, high surge capability, and SOD-323 surface mount package. |
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B5817W
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SLKOR
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B5817WS SJ
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JCET Group
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Schottky barrier diode in SOD-323 package, available as B5817WS, B5818WS, and B5819WS, with peak reverse voltage ratings of 20V, 30V, and 40V respectively, 1A average rectified current, and low forward voltage drop. |
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B5817W
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Shenzhen Heketai Electronics Co Ltd
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Schottky barrier diode in SOD-123 surface mount package with low forward voltage, 40V peak reverse voltage, 1A forward current, and low capacitance for high-frequency applications. |
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B5817WS
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AK Semiconductor
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Schottky barrier rectifier in SOD-323 package with reverse voltage ratings of 20 to 40 V, forward current of 1 A, low forward voltage drop, and high surge current capability suitable for low voltage, high frequency applications. |
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1N5817W
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AK Semiconductor
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Schottky barrier rectifier in SOD-123FL package with reverse voltage ratings of 20V to 40V, forward current rating of 1A, low forward voltage drop, and high surge current capability. |
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B5817WS
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JCET Group
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Schottky barrier diode in SOD-323 package, rated for 20V to 40V peak reverse voltage, 1A average rectified current, 1.5A repetitive peak forward current, with low forward voltage and fast switching for high frequency inverters and polarity protection applications. |
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B5817W
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AK Semiconductor
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Schottky barrier rectifier in SOD-123 package with reverse voltage ratings of 20 to 40 V, forward current rating of 1 A, low forward voltage drop, and high surge current capability up to 25 A. |
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B5817W Thru B5819W
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CREATEK Microelectronics
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Schottky barrier diode in SOD-123 package with reverse voltage ratings of 20V, 30V, and 40V for B5817W, B5818W, and B5819W respectively, 1A average rectified current, low forward voltage drop, and 500mW power dissipation. |
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B5817W
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JCET Group
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Schottky barrier diode in SOD-123 package, rated for 20V to 40V peak reverse voltage, 1A average rectified current, with low forward voltage drop and 500mW power dissipation. |
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1N5817W
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Shenzhen Heketai Electronics Co Ltd
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Schottky barrier diode in SOD-123 surface mount package with low forward voltage, 40V peak reverse voltage, 1A forward current, and low capacitance for high-frequency applications. |
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B5817WS Thru B5819WS
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CREATEK Microelectronics
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Schottky barrier diode in SOD-323 package with low forward voltage drop, available in 20 V, 30 V, and 40 V reverse voltage ratings, rated for 1 A average rectified current and 250 mW power dissipation. |
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B5817WL
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Shikues Semiconductor
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Metal silicon junction, guarding for overvoltage, low power loss, high efficiency, high current, low forward voltage, high surge capability. |
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B5817WSFL
