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Catalog Datasheet	Type	Document Tags	PDF
IFP4N60 Abstract: IFP4 Contextual Info: IFP4N60 N-Channel MOSFET Features • RDS on (Max 2.5 Ω)@VGS=10 V • Gate Charge (Typical 15 nC) • Maximum Junction Temperature Range (150 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25 °C)	Original	IFP4N60 300us, IFP4N60-TSe 576x463 IFP4N60 IFP4	PDF

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IFP4N60

Abstract: IFP4
Contextual Info: IFP4N60 N-Channel MOSFET Features • RDS on (Max 2.5 Ω)@VGS=10 V • Gate Charge (Typical 15 nC) • Maximum Junction Temperature Range (150 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25 °C)

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IFP4N60 300us, IFP4N60-TSe 576x463 IFP4N60 IFP4

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