56A MARKING CODE Search Results

LR56A

Abstract: XL93LC56AP LR56 D0005 11d0005 D00-05 LC56 93LC56P
Contextual Info: XL93LC56/56A EXEL Microelectronics, Inc. 2,048-Bit Serial Electrically Erasable PROM with 2V Read Capability FEATURES • 2.7 to 5.5V Operation XL93LC56 4.5 to 5.5V Operation (XL93LC56A) • Extended Temperature Range: -40°C to +85 °C • State-of-the-Art Architecture

035H

Abstract: IRFPE30 IRFP90N20DPbF
Contextual Info: IRFP90N20DPbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current

k177

Abstract: K211 Q62705-K177 Q62705-K179 Q62705-K181 Q62705-K183 Q62705-K211
Contextual Info: Silicon Piezoresistive Absolute Pressure Sensor KPY 52-A KPY 56-A Features • • • • Low pressure and temperature hysteresis Fast response High sensitivity and linearity Fatigue free monocrystaline silicon diaphragm giving high load cycle stability • High long term stability

Contextual Info: IRF7171MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified Applications and Benefits Ideal for High Performance Isolated Converter Primary Switch Optimized for Synchronous Rectification RoHS Compliant, Halogen Free 

IRFP90N20DPBF

Abstract: 035H AN1001 IRFPE30 irfp90n20d
Contextual Info: PD - 95664 SMPS MOSFET IRFP90N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on max ID 200V 0.023Ω 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

KPY 16

Contextual Info: SIEMENS KPY 52-A KPY 56-A Silicon Piezoresistive Absolute Pressure Sensor Features • • • • Low pressure and temperature hysteresis Fast response High sensitivity and linearity Fatigue free monocrystaline silicon diaphragm giving high load cycle stability

IRFR7446PBF

Contextual Info: StrongIRFET™ IRFR7446PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies

Irfp90n20d

Abstract: 035H AN1001 IRFPE30 IRFP90N20DPbF irfp90n20
Contextual Info: PD - 95664 SMPS MOSFET IRFP90N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on max ID 200V 0.023Ω 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

Contextual Info: SIEMENS Silicon Piezoresistive Absolute Pressure Sensor KPY 52-A KPY 56-A Features • • • • Low pressure and temperature hysteresis Fast response High sensitivity and linearity Fatigue free monocrystaline silicon diaphragm giving high load cycle stability

Contextual Info: PD - 95664 SMPS MOSFET IRFP90N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on max ID 200V 0.023Ω 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

035H

Abstract: IRFPE30 IRGP4050PBF
Contextual Info: PD-95743 IRGP4050PbF PDP Switch Features § § § § § § § Key parameters optimized for PDP sustain & Energy recovery applications 104A continuous collector current rating reduces component count High pulse current rating makes it ideal for capacitive load circuits

Contextual Info: StrongIRFET™ IRFR7446PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies

Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA)

Contextual Info: PD-95743 IRGP4050PbF PDP Switch Features § § § § § § § Key parameters optimized for PDP sustain & Energy recovery applications 104A continuous collector current rating reduces component count High pulse current rating makes it ideal for capacitive load circuits

marking 49M

Contextual Info: PD - 96412 AUTOMOTIVE GRADE AUIRLS3114Z HEXFET Power MOSFET Features l l l l l l l l VDSS RDS on typ. max. ID (Silicon Limited) D Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

Contextual Info: 1.5SMC SERIES GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 1500 Watt Peak Pulse Power 1.5SMC PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE LEAKAGE CLAMPING PULSE OFF

Contextual Info: AUTOMOTIVE GRADE AUIRLS3114Z HEXFET Power MOSFET Features l l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

56a MARKING code

Abstract: HD-007 93l46 marking 66a NM93CS46 NM93CS56 NM93CS66 S-93L46A S-93L56A S-93L66A
Contextual Info: Rev.3.1_00 LOW VOLTAGE OPERATION CMOS SERIAL E2PROM S-93L46A/56A/66A The S-93L46A/56A/66A is a low voltage operation, high speed, low current consumption, 1/2/4 K-bit serial E2PROM with a wide operating voltage range. It is organized as 64-word x 16-bit, 128-word × 16-bit,

Contextual Info: Rev.4.0_00 LOW VOLTAGE OPERATION CMOS SERIAL E2PROM S-93L46A/56A/66A The S-93L46A/56A/66A is a low voltage operation, high speed, low current consumption, 1/2/4 K-bit serial E2PROM with a wide operating voltage range. It is organized as 64-word x 16-bit, 128-word × 16-bit,

FM25H20

Abstract: marking 66a NM93CS46 NM93CS56 NM93CS66 S-93L46A S-93L56A S-93L66A
Contextual Info: Rev. 3.0_00 LOW VOLTAGE OPERATION CMOS SERIAL E2PROM S-93L46A/56A/66A The S-93L46A/56A/66A is a low voltage operation, high speed, low current consumption, 1/2/4 K-bit serial E2PROM with a wide operating voltage range. It is organized as 64-word x 16-bit, 128-word × 16-bit,

93l46

Abstract: 93l66 93L56 s93L46ar marking 66a S-93L46A S-93L56A S-93L66A transistor marking code sk S93L66
Contextual Info: S-93L46A/56A/66A LOW VOLTAGE OPERATION 3-WIRE SERIAL E2PROM www.sii-ic.com Rev.6.0_00 Seiko Instruments Inc., 2004-2010 The S-93L46A/56A/66A is a low voltage operation, high speed, low current consumption, 1/2/4 K-bit 3-wire serial E2PROM with a wide operating voltage range. It is organized as 64-word x 16-bit, 128-word × 16-bit, 256word × 16-bit, respectively. Each is capable of sequential read, at which time addresses are automatically

S-93L46A

Abstract: S-93L56A S-93L66A 93l46 S93L66
Contextual Info: S-93L46A/56A/66A LOW VOLTAGE OPERATION 3-WIRE SERIAL E2PROM www.sii-ic.com Rev.7.0_00 Seiko Instruments Inc., 2004-2011 The S-93L46A/56A/66A is a low voltage operation, high speed, low current consumption, 3-wire serial E2PROM with a wide operating voltage range. The S-93L46A/56A/66A has the capacity of 1 K-bit, 2 K-bit and 4 K-bit, and the organization is 64word x 16-bit, 128-word × 16-bit, and 256-word × 16-bit. It is capable of sequential read, at which time addresses are