560 SOT223 Search Results

Contextual Info: User's Guide SLVU464 – July 2011 UCD90SEQ48EVM-560: 48-Pin Sequencer Development Board This user's guide describes the 48-pin Sequencer Development Board – UCD90SEQ48EVM-560. This development board contains a 48-pin socket and interface circuitry to support the UCD9090.

Hall TLE 4905

Abstract: EW-460 hall sot223 asahi EW-410 tle4905 TLE4905G EW-400 EW-450 EW-510
Contextual Info: Cross reference list Hall IC switches Asahi Part No. Asahi Type Package EW 400 EW 410 EW 450 EW 460 EW 500 EW 510 EW 550 EW 560 Latch Latch Switch Switch Latch Latch Switch Switch SOT223 like SOT223 like SOT223 like SOT223 like P-SSO-3 like P-SSO-3 like P-SSO-3 like

667 transistor ecb

Abstract: SOT-23 EBC SCR TRANSISTOR scr 209
Contextual Info: Mechanical Drawings 201 Mechanical Drawings All Dimensions in inches mm . AX-5W Case 106 037(0.94] 043(1.09) 1.0(25.4) M I N I MUM .330(8.38] .350(8.89) T 13 0 ( 3 . 3 0 ) 145(3.68) 1.0(25.4) M I N I MUM Case B-M Case A 4 125(3. .560(14 22 ) •600(15 24)

IND1812

Abstract: RB 34 schottky diode BAT 9V FEMALE R36 SOT223 HDR connector 1x5 DIODE P1 sod123 diode R42 SOT223 13 560 rj45 female
Contextual Info: 5 4 3 2 C1 TP1 SMP_VCC 0402 VCC 1 560 P1[0]b P1[1]b C8 10 uFd 25v 5V 1 2 3 0 OHM Place test points near edge of board. Vin Vin TP2 1 VIN TP5 1 5V 5V NOTE: 1 VIN TP6 TP7 1 5V GND 5V DEFAULT JUMPER PIN 2 TO 3 D P1[5]b VCC 0 OHM TP3 HEADER 3 1206 2 56 Vdd 0402

LD 33 regulator

Abstract: zld0500
Contextual Info: Section 9: Integrated Circuits U ltra Low D ro po ut Regulators ZLDO Series The ZLDO regulator series o f devices utilise a novel approach to low dropout regulators to achieve exceptional performance. The devices use theZetex SM8 package which has 8 pins and is based on the SOT223 body outline.

LM1117MPX-5.0 SOT-223

Abstract: R36 SOT223 0402 resistors HDR jumper led 0805 SOT R23 BAT 9V FEMALE HDR1X5 0402 resistor 1% 13 560
Contextual Info: 5 4 3 2 1 Vadj TP1 VCC TP11 GND Do Not Populate J1 VCC C1 5V 1 2 3 1 2 3 Place test points near edge of board. TP3 0.1 uFd NOTE: TP2 1 VIN TP5 1 5V Vin HEADER 3 0402 Vin VIN 1 5V DEFAULT JUMPER PIN 2 TO 3 5V 27 Vdd XRES 2 P1[0] 300 2 P1[1] P1[2] 300 P1[3]

Contextual Info: SOT223 PIMP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1 - NOVEMBER 1998 FEATURES * 500 V o lt V,CEO 150m A c o n tin u o u s c u rre n t Ptot = 2 W a tt PARTM ARKING D E T A IL - FZT560 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL C o lle c to r-B a s e V o lta g e

D2PAK1

Contextual Info: Cherry Semiconductor offers a wide variety of traditional packages in addition to more advanced package technology. Flip Chip is an example of the advanced packaging technologies offered by Cherry Semiconductor. An application note included in this section explains the Flip Chip manufacturing process and the methods available for Flip Chip assembly.

CS16

Abstract: ctn 4.7 RM-1 datasheet ITO-220 CD16 CS14 CS28 cx sot-353 DFN33 SOT-26 ci
Contextual Info: Packing of IC & MOSFET TUBE PACK Outline Code Outline Packing Code Static electricity bag 靜電袋 Box (PCS) Box # Box Size (mm) CTN # CTN (PCS) CTN Size (mm) G.W. (kgs) N.W. (kgs) CZ TO-220 (50pcs/tube) C0 1,000 2,000 VENDOR 600*166*96 VENDOR 8,000 630*355*233

tm1101

Abstract: Diode schottky eb PZTM1101 PZTM1102
Contextual Info: Product specification Philips Semiconductors PZTM1101 NPN transistor/Schottky-diode module FEATURES DESCRIPTION • Low output capacitance Combination of an NPN transistor and a Schottky barrier diode in a plastic SOT223 package. PNP complement: PZTM1102.

Contextual Info: TSA1765 High Voltage PNP Epitaxial Planar Transistor SOT-223 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -560V BVCEO -560V IC -150mA VCE SAT Features ● ● Ordering Information Low Saturation Voltages High Breakdown Voltage Part No.

BSP125

Abstract: L6327 JESD22-A114-HBM
Contextual Info: Rev. 2.1 BSP125 SIPMOS Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 600 V 45 Ω 0.12 A PG-SOT223 • Pb-free lead plating; RoHS compliant x Qualified according to AEC Q101 RoHS compliant Tape and Reel Information Marking Packaging

IS-012A

Abstract: bsp125 2700us
Contextual Info: Rev. 2.2 BSP125 SIPMOS Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 600 V 45 Ω 0.12 A PG-SOT223 • Pb-free lead plating; RoHS compliant x Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

BFG35

Abstract: TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570
Contextual Info: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.

2SD882P

Abstract: ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA 200 500 200 150 150 150 500 200 100 100 100 50 500 200 600 600 100 100 100 150 150 150 200

"Signal Line Filter"

Abstract: electrical based microcontroller projects 78M05 sot223 EMC for PCB Layout MC908AP64 1n4733 smd MC68HC9S08AW60 AN2764 Signal Line Filters a1972
Contextual Info: Freescale Semiconductor Application Note AN2764 Rev. 0, 06/2005 Improving the Transient Immunity Performance of Microcontroller-Based Applications by: Ross Carlton, Greg Racino, John Suchyta Freescale Semiconductor, Inc. Introduction Increased competition among appliance manufacturers, as well as market regulatory pressures, are

BFG35 amplifier

Contextual Info: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.

Contextual Info: SUPPLY VOLTAGE MONITOR ISSUE 2 - NOVEMBER 1995 DEVICE DESCRIPTION FEATURES T h e Z S M 5 6 0 is a th re e te rm in a l und er v o lt a g e m o n it o r c ir c u it fo r use in m ic ro p ro c es s o r system s. T he thresh old voltage of the device has been set to 4.6 volts

npn 2222 transistor

Abstract: BFG198 MS80 din 45325 2222 TRANSISTOR NPN Philips 2222 114 capacitor 2222 851
Contextual Info: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.

ZXMH6A07T8

Abstract: ZXMP6A17DN8
Contextual Info: 60 Volt MOSFETs A series o f m id -vo ltage M O SFETs containing sm all signal products fo r lo w current sw itching applications and trench M OSFETs. The trench M O SFETs enable much h igher current handling capability in the packages on offer. Typical applications include:-

Philips 2222 050 capacitor

Contextual Info: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated

BFG135 power amplifier for 900Mhz

Abstract: BFG135 amplifier BFG135 A amplifier bfg135 BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz
Contextual Info: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated

12v and 5v regulated power supply circuit diagram

Abstract: VJ0805Y104JXA schematic power supply circuit diagram using ic POWER MOSFET CIRCUIT LMV321M5 1N5819M 929834-02-36-ND 20a power supply AN820 LMV321
Contextual Info: SiDB766761 Vishay Siliconix Temperature Sensing MOSFET Evaluation Board FEATURES Turns Off MOSFET Before TJ Exceeds 175_C Rating 5-V Logic Level Operation of Control Circuit 12-V Battery Level Operation of Power MOSFET Circuit Sense Diode Bias Current, IF = 250 mA

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123