560 M 13 Search Results

bc 540

Abstract: BCW90 bcw 94 b ESM636 BCW91B ESM 639 BCW 90 BCW91 ESM638 Esm635
Contextual Info: o general purpose transistors — plastic case transistors usage général — boîtier plastique M axim um ratings Type NPN PNP THOMSON-CSF Characteristics at 25°C Ptot VCEO mW (V) BC 559 BC 559 B BC 559 C 500 25 125 200 420 BC 560 BC 560 B BC 560 C 500

ci 555

Abstract: TLG123A ci 565 tlg124a LN38GPPN SLR-34 EMPG3338S TE 555 MPG3867S MBG3372X
Contextual Info: t? a V r, ft. 'd eg1 & MPG3338S ; MBG3338S . - m i: MPG3368S , m;± i t ' r ‘J Î Î i t * t-4fi.fl % K tm A/- 30 560 30 555 16 560 •T„- 25'C: *S/f m /, 'mcd 20 I f 1mA f i À At f t : r „ - 25'C ■ «i Vf 'V : l y ;mA: «m m « I f Vu !mA- 'V '

ci 555

Abstract: TLG124A TLG102 SKY77916_21 TLG123A LN38GPPN SLH-34MG TLG123 MPG3338S SLR-37MG
Contextual Info: t? a V r, ft. 'd eg1 & MPG3338S ; MBG3338S . - m i: MPG3368S , m;± i t ' r ‘J Î Î i t * t-4fi.fl % K tm A/- 30 560 30 555 16 560 •T„- 25'C: *S/f m /, 'mcd 20 I f 1mA f i À At f t : r „ - 25'C ■ «i Vf 'V : l y ;mA: «m m « I f Vu !mA- 'V '

Contextual Info: EDD DRAWING NO.: NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE ± .01 0 ” [.254m m ]. REV. c 31-1035-* .800 [20.32m m ] .560 [14.22m m ] .150 MAX [3.81 mm] .060 [1 .52mm] .120 [3.05m m ] .350 [8.89m m ] 2X .130 THRU [03.30m m ] i r .230 [5.84m m ] 1

13 560

Abstract: 455J
Contextual Info: J 4 pis nf GEQ rxm: u K C B DIM MILLIMETER A 18.92 B 14.22 C 7.37 D 6.35 E 8.89 F 8.38 G 14.22 H 5.59 1 45* J 1.27x45' K 3.94 L 3.05 M 1.52 TOL INCHES .13 .745 .13 .560 .13 .290 .13 .250 .13 .350 .13 .330 .13 .560 .13 .220 5° 45* .13 .050x45* .13 .155 .13

Contextual Info: 13 12 10 LOGO O R IE N TA T IO N M A T E R IA L NUMBER E N G IN E E R IN G NUMBER 197054003 19705-4003 S T R IP 197054103 19705-4103 S T R IP 197054105 19705-4105 S T R IP OUT .560/14.22 C A R R IE R DIMENSION "A - DIMENSION "B" IN .560/14.22 .250/6.05 IN

Contextual Info: EDD DRAWING NO.: NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE ± .010” [,2 5 4 m m ]. 2X 0.160 [0 4 .0 6 m m ] THRU .560 [1 4 .2 2 m m ]' .062 [1 .57m m ] MATERIALS: FLANGE: COPPER } HD SUBSTRATE: ALUMINUM NITRIDE COVER: ALUMINA .250 [6 .3 5 m m ] 1

TLG113A

Abstract: ci 555 MPG5373X TLG113AP EBG5334S TLG114A TLG113 EBG5304S LH 431 SLP-236B-81
Contextual Info: -2 0 1 ñ i , ïi S ti « * i it -!-> v > SELJ413E SEL1510C « .* T , = 25'C: f t -k 1i Ifc 'mÜLmt 1m A : 20 2 .0 10 30 20 2 .0 10 30 560 10 2 .0 10 570 10 2 .0 lü 560 555 3D r .- = 25'C lü il^ W; . ‘,m Y C- 3 —30 —85 23 3 -3 0 -8 5 23 30 - 3 0 -8 5

transistor B 560

Abstract: TRANSISTOR BC 136 BC560 TRANSISTOR BC 560 TRANSISTOR BC 135 IC 7414 transistor c-133 2493 transistor transistor Bc 82 ic 7414 cm
Contextual Info: BC 559 * BC 560 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendung: Rauscharme Vorstufen Application: Low noise prestages Besondere Merkmale: Features: • Verlustleistung 500 m W • Power dissipation 500 m W

Contextual Info: EDD DRAWING NO.: NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE ± .010” [,2 5 4 m m ]. .062 [1 .57m m ] 2X 0.160 [0 4 .0 6 m m ] THRU .560 [1 4 .2 2 m m ]' MATERIALS: .250 [6 .3 5 m m ] FLANGE: COPPER J HD SUBSTRATE: ALUMINUM NITRIDE COVER: ALUMINA 1

Contextual Info: EDD NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE ± .155 [3 .9 4 m m ] .560 [1 4 .2 2 m m ] .250 [6 .3 5 m m ] 2X 0.161 [0 4 .0 9 m m ] THRU .125 _J [3 .1 8 m m ] MATERIALS: MTG. FLANGE: OFHC 1 / 4 HD SUBSTRATE: ALUMINUM NITRIDE COVER: ALUMINA TAB: BERYLLIUM COPPER

R30C

Contextual Info: • Dot matrix Displays 1 2 "{3 0 m m 5x7 ' . Emitting Color Part Number Shape , Wave Length nm) Emitting Material Luminous Intensity IF=10mA {ucd) Min. Max. Column M H R30A / M HR30C Red GaP 700 560 - 1400 A node / C athode M U R 30A Red G aAsP/G aP 625

Contextual Info: • Dot matrix Displays Emitting Color Part Number Shape 2.3" 58m m 8x8 Emitting Material Wave Length (nm) Luminous Intensify IF=10mA (ucd) Mln. Max. Column 560 - 1400 A node / C athode M H R60A8 / M H R60C8 Red GaP 700 M U R 60A8 / M U R60C8 Red G aAsP/G aP

Contextual Info: ASSEMBLY DM 'IT LED COLOR NUMB DM T DM XT U M NT. M UM VHHAX1 M HMAXJ M JLpeai TEST. nm) COMI UMAX] • 5V|iA> 550-0205 GREEN DIFFUSED .135 .020 .043 3 .5 2. 8 560 20mA 100 550-0305 YELLOW DIFFUSED .135 .020 .043 3 .5 2. 8 58 5 20mA 100 2. 8 550-0405 RED DIFFUSED

Contextual Info: PICO’S miniature 400 Hz transformers JfSHIfL SURFACE 115V/26V 1fades Primary _ — SBC/ VOLT 5.0 CT IIP \ Serial M ax Humber Height A C D S 76000 .415 10.54} 560 13.97 .095 (2.41) .136 13.43) .010 (0.25) .670 (17.02) .016 0.38) .020 0.51) .060 (162)

55BV

Abstract: 560 m 13
Contextual Info: N M J DIM MILLIMETER A 1.27 C D E 6.35 31.75 2.5 4 G 14.22 H I J K L M 20.32 0.10 15.24 3.05 4.06 6.35 N 1.27x45° 3.30 DIA TOL .13 + - + + - .08 .18 INCHES .050 .13 .13 .250 1.250 .100 .13 .560 .10 .15 .05 .04 .25 .13 .13 .13 .800 .004 .060 .120 .170 .250

lem lt 100 p

Abstract: lem HA NJM2747 DMP14 NJM2747M
Contextual Info: 1 O perational Amplifiers NJM2747MZ • NJM2747VZ Ta=+25"C mg Ü iÜ lJ i v u x - ^ m mm m NJM2747MZ DMP14 NJM2747VZ SS0P14 hB7? V* 15 m m xtm ji m sA fin s. VlD Vie mnmii ShifrUlt Pd ± 15 0-1 5 D M P ÌK 7 ° 375 S S 0 P 2 Y 7 ” 560 <a” Topr V mW

transistor 33w

Abstract: 33w NPN
Contextual Info: m an A M P com pany Wireless Bipolar Power Transistor, 33W 1930-1990 MHz Features PH1920-33 .744 18,90 -.560(14.22)- - • • • • • NPN Silicon M icrow ave P o w er T ran sisto r C o m m o n Km itter C lass AB O peratio n Intern al Inpu t and O utput Im p ed an ce M atching

LA 7576

Contextual Info: 1 in Is- CD / it V IE W 'A' FOR PN 5 - 4 3 7 5 7 6 - 0 & - 1 ONLY FLEX CIRCUITY FLEX CIRCUITY C L 1. 0 1 0 .710 .460 .410 .560 .510 2 .9 1 0 2=860 2=810 2 .7 6 0 2 .7 1 0 2 .6 6 0 2 .6 1 0 2=560 2 .5 1 0 2 .4 6 0 2 .4 1 0 2 .3 6 0 2. 310 + Æ Ü M 1 [F >

14C4-A

Abstract: 14A4 IG 2200 19
Contextual Info: • Four Digit Displays 0 .5 6 " 1 4 2 m m Emitting Material Emitting Color Part Number Shape Wave Length (nm) Luminous Intensity IF=10mA (ucd) Min. Max. Common D HR 14A4 / D HR14C4 D H R 14A4-A / D HR 14C 4-A DHR14A4-1 / DHR14C4-1 Red GaP 700 560 - 1400

K 3115

Abstract: 3070T3 TISP3145T3 TISP3219T3 TISP3070T3 TISP3080T3 TISP3095T3 3219T3
Contextual Info: oH S CO M PL IA NT TISP3070T3BJ THRU TISP3395T3BJ *R DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3xxxT3BJ Overvoltage Protector Series Dual High Current Protectors in a Space Efficient Package - 2 x 100 A 10/560 Current Rating - Modified 3-pin SMB DO-214AA Package

Contextual Info: 0.362-INCH SEVEN SEGMENT DISPLAYS OPTOELECTRONI CS RED FND350C FND357C FND358C HI-BRITE RED FND360C FND367C FND368C PACKAGE DIMENSIONS O R IE N T A T IO N M AR KS um I I .560 14.224 .550 (13.970) dpO .070 (2.73) .110 (2.794) I T X V D _! .030 (.762)— — 5192

CRBV55CL-0535-0560

Contextual Info: RedBox M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 535 MHz 4.7 VDC Lower Frequency: Upper Frequency: 560 Tuning Voltage: 0.2 Supply Voltage: 4.75 5.0 5.25 VDC +1.5 +3.0 dBm 16 mA Pushing: 2.0 MHz/V Pulling, all Phases:

2N2904

Abstract: 2N2904A T-37-17 TRANSISTOR 2n2904 W744 2n2904 philips
Contextual Info: 2N2904 2N2904A JL PHILIPS INTERNATIONAL SbE D m 7110021, 0042^20 560 BiPHIN r -3 7 -t 7 SILICON PLANAR EPITAXIAL TRANSISTOR|S P-N-P transistors in TO-39 metal envelopes designed primarily for high-speed switching and driver applications for industrial service.