|
55H01
|
|
Johanson Manufacturing
|
WORKING VOLTAGE: 250 VDC TO 5000 |
Original |
PDF
|
292.29KB |
|
|
55H02
|
|
Johanson Manufacturing
|
WORKING VOLTAGE: 250 VDC TO 5000 |
Original |
PDF
|
292.29KB |
|
|
55HQ015
|
|
International Rectifier
|
V(rwm): 15V, 60A schottky power rectifier |
Scan |
PDF
|
184.08KB |
4 |
|
55HQ020
|
|
International Rectifier
|
V(rwm): 20V, 60A schottky power rectifier |
Scan |
PDF
|
184.08KB |
4 |
|
55HQ025
|
|
International Rectifier
|
V(rwm): 25V, 60A schottky power rectifier |
Scan |
PDF
|
184.08KB |
4 |
|
55HQ025
|
|
Unknown
|
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
|
35.08KB |
1 |
|
55HQ030
|
|
International Rectifier
|
Schottky Rectifier |
Original |
PDF
|
53.95KB |
4 |
|
55HQ030
|
|
International Rectifier
|
Schottky Rectifier |
Original |
PDF
|
77.54KB |
5 |
|
55HQ030
|
|
Microsemi
|
Schottky Rectifier |
Scan |
PDF
|
129.21KB |
2 |
|
55HQ030
|
|
Unknown
|
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
|
35.08KB |
1 |
|
55HQ030PBF
|
|
International Rectifier
|
DIODE SCHOTTKY 30V 60A 2 pin DO-203AB |
Original |
PDF
|
77.54KB |
5 |
AK55H12
|
|
AK Semiconductor
|
N-Channel Enhancement Mode Power MOSFET with 55V VDS, 120A ID, and RDS(ON) of 4.1mΩ at VGS=10V, featuring high cell density design, low gate charge, and 200W power dissipation in TO-220-3L package. |
Original |
PDF
|
|
|
NCE55H12
|
|
NCEPOWER
|
NCE55H12 is an N-channel enhancement mode power MOSFET with 55V drain-source voltage, 120A continuous drain current, and low on-resistance of 4.1mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. |
Original |
PDF
|
|
|