54CSP Search Results

Contextual Info: K4S64163LF-R B L/N/P CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)L/N/P CMOS SDRAM 1M x 16Bit x 4 Banks SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

Contextual Info: CMOS SDRAM K4S28163LD-RL/N/P 8Mx16 SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S28163LD-RL/N/P CMOS SDRAM Revision History Revision 0.0 (June 4. 2001, Target) • First generation of 128Mb Low Power SDRAM not having Mobile feature.

K4S511633C

Contextual Info: K4S511633C-YL/N/P CMOS SDRAM 32Mx16 Mobile SDRAM 54CSP 1/CS VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V Revision 1.2 December 2002 Rev. 1.2 Dec. 2002 K4S511633C-YL/N/P CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 3.0V power supply The K4S511633C is 536,870,912 bits synchronous high data

Contextual Info: K4M51163LE - Y P C/L/F Mobile-SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • VDD = 2.5V. The K4M51163LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the

Contextual Info: K4S51163LC-YG/S CMOS SDRAM 32Mx16 Mobile SDRAM 54CSP 1C/S VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, PASR & TCSR Revision 1.1 Aug 2002 Rev. 1.1 Aug. 2002 K4S51163LC-YG/S CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 2.5V power supply

Contextual Info: V DD 2.5V, V DDQ 1.8V & 2.5V K4S28163LD-RL N CMOS SDRAM 8Mx16 SDRAM 54CSP Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 V DD 2.5V, V DDQ 1.8V & 2.5V K4S28163LD-RL(N) CMOS SDRAM Revision History Revision 0.0 (June 4. 2001, Target) • First generation of 128Mb Low Power SDRAM not having Mobile feature.

Contextual Info: K4S511533C-YL/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP 2/CS VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V Revision 1.0 July 2002 Rev. 1.0 July 2002 K4S511533C-YL/N/P CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 3.0V power supply The K4S511533C is 536,870,912 bits synchronous high data

Contextual Info: CMOS SDRAM K4S64163LF-RF/R 4Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S64163LF-RF/R CMOS SDRAM Revision History Revision 0.0 (May . 2001, Target) • First generation of 64Mb LP SDRAM 54CSP having TCSR option (V DD 2.5V, V DDQ 1.8V).

Contextual Info: K4M64163PH - R B G/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M64163PH is 67,108,864 bits synchronous high data • LVCMOS compatible with multiplexed address. rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

K4M28163LF

Contextual Info: K4M28163LF - R B E/N/S/C/L/R Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits,

Contextual Info: K4S641633F-RL N CMOS SDRAM 4Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S641633F-RL(N) CMOS SDRAM Revision History Revision 0.0 (May 21. 2001, Target) • First generation of 64Mb LP SDRAM 54CSP (V DD 3.0V, V DDQ 3.0V).

Contextual Info: Preliminary K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.6 November 2001 Rev. 0.6 Oct. 2001 Preliminary K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).

Contextual Info: K4S281633D-RL N CMOS SDRAM 8Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S281633D-RL(N) CMOS SDRAM Revision History Revision 0.0 (February 21. 2001, Target) • First generation of 128Mb Low Power SDRAM without special function (V DD 3.0V, V DDQ 3.0V)

K4S51163LC-YG

Abstract: K4S51163LC
Contextual Info: K4S51163LC-YG/S CMOS SDRAM 32Mx16 Mobile SDRAM 54CSP 1C/S VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, PASR & TCSR Revision 1.2 December 2002 Rev. 1.2 Dec. 2002 K4S51163LC-YG/S CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 2.5V power supply

K4S64163LH

Abstract: CMOS Dynamic RAM 1M x 1
Contextual Info: K4S64163LH - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the

K4S64163LF-RG

Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-RG(S) Preliminary CMOS SDRAM 4Mx16 Mobile SDRAM (TCSR & PASR support, -25°C ~ 85°C Operation) Revision 0.3 October 2001 Rev. 0.3 Oct. 2001 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S64163LF-RG(S) Preliminary

Address Auto Decode

Abstract: sdram 4 bank 4096 16 K4S56163LC
Contextual Info: Mobile DRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RG(S) CMOS SDRAM 16Mx16 Mobile DRAM (Mobile Function support) Revision 0.4 December 2001 Rev. 0.4 Dec. 2001 Mobile DRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S56163LC-RG(S) CMOS SDRAM Revision History Revision 0.0 (April. 2001, Target)

Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S28163LD-RG(S) CMOS SDRAM 8Mx16 Mobile SDRAM (PASR & TCSR, -25°C ~ 85°C Operation) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S28163LD-RG(S) CMOS SDRAM Revision History

mobile dram

Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S28163LD-RF(R) CMOS SDRAM 8Mx16 Mobile SDRAM (PASR & TCSR, -25°C ~ 70°C Operation) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S28163LD-RF(R) CMOS SDRAM Revision History