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    540 MARKING DIODE Search Results

    540 MARKING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Datasheet
    MUZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Datasheet
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet

    540 MARKING DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    KSD-3030-000

    Abstract: Schottky Diode 40V 5A SDB0540 KSD303
    Contextual Info: SDB0540 치 Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB0540 Package Code 540 SOD-123 Outline Dimensions unit : mm 3.4~3.6 1.5~1.7 2.6~2.8 1


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    SDB0540 OD-123 KSD-3030-000 KSD-3030-000 Schottky Diode 40V 5A SDB0540 KSD303 PDF

    Contextual Info: SDB0540 SCHOTTKY RECTIFIER DIODE Schottky Barrier Rectifier General Description The SDB0540 surface mounted Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power


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    SDB0540 SDB0540 OD-123 14-SEP-10 KSD-D6B037-000 PDF

    diode marking code 540

    Abstract: tp5a SDB0540 540 MARKING DIODE
    Contextual Info: SDB0540 SCHOTTKY RECTIFIER DIODE Schottky Barrier Rectifier General Description The SDB0540 surface mounted Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power


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    SDB0540 SDB0540 OD-123 14-SEP-10 KSD-D6B037-000 diode marking code 540 tp5a 540 MARKING DIODE PDF

    diode ba110

    Abstract: BA142 BA110 BA 141 diode BB142 BB141 ba112 BA 30 C Diode BAY 45 S3 marking DIODE
    Contextual Info: Silicon Capacitance Diodes Variable Capacitance Silcon Diodes for automatic frequency control Type BA 110 BA 110 G 1 C h a ra c te ris tic s @ T am b = 2 5 °C @ VR = 2 V f = 30 M Hz @ Ip = 60 m A @ VR = 10V r¡ Q Q l/f V I r nA 1 540 < 0,95 < 50 V BR}R V


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    BA110 BB141 BB142. diode ba110 BA142 BA 141 diode BB142 ba112 BA 30 C Diode BAY 45 S3 marking DIODE PDF

    SR5100 diode

    Abstract: SR560 diode SR5100 SR560 SR530 Diode SR5100 SR540 RS-296-E SR520 SR550
    Contextual Info: SR520 SR5100 WTE POWER SEMICONDUCTORS Pb 5.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability


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    SR520 SR5100 DO-201AD DO-201AD, MIL-STD-202, SR5100 diode SR560 diode SR5100 SR560 SR530 Diode SR5100 SR540 RS-296-E SR520 SR550 PDF

    smd schottky diode 82

    Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR645CT series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA


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    PBYR645CT accordanSOT428 OT428 smd schottky diode 82 PDF

    marking v3

    Contextual Info: Ordering number:ENN6264 Diffused Junction Type Silicon Composite Varactor ¡SANYO, SVC383 AM Low Voltage Electronic Tuning Applications Features • Twin type varactor diode for low-voltage AM electronic tuning use. . • Low voltage 6.5V . • High Q. • Possible to offer the SVC383 devices in a tape reel


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    ENN6264 SVC383 SVC383 SVC383-applied SVC383] 73099GI B3B37 Q0E3336 marking v3 PDF

    Contextual Info: SR520 SR5100 WTE POWER SEMICONDUCTORS Pb 5.0A SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  High Current Capability A B  Low Power Loss, High Efficiency  High Surge Current Capability


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    SR520 SR5100 DO-201AD DO-201AD, MIL-STD-202, PDF

    diode T3 Marking

    Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR645CT series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA


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    PBYR645CT PBYR635CTD PBYR640CTD PBYR645CTD diode T3 Marking PDF

    smd k77

    Abstract: smd k79 smd transistor marking k77 K77 transistor transistor k79 IR 540 smd diode k77 BAT750
    Contextual Info: Diodes SMD Type 0.75 Surface Mount Schottky Barrier Rectifier KAT750 BAT750 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 For Use in DC-DC Converter, PCMCIA, 1 0.55 High Conductance +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low Forward Voltage Drop 2 +0.1


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    KAT750 BAT750) OT-23 100mA 1500mA 500mA 1000mA 750mA 250mA smd k77 smd k79 smd transistor marking k77 K77 transistor transistor k79 IR 540 smd diode k77 BAT750 PDF

    SS54

    Contextual Info: CYStech Electronics Corp. Spec. No. : C337SC Issued Date : 2003.06.02 Revised Date : Page No. : 1/3 5.0Amp. Surface Mount Schottky Barrier Diodes CSMC520-5100SC Series Features • For surface mounted applications. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications


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    C337SC CSMC520-5100SC MIL-S-19500/228 DO-214AB. MIL-STD-750 UL94V-0 CSMC520-5100SC SS54 PDF

    diode marking code 540

    Abstract: DIODE MARKING 541
    Contextual Info: Central CMUD4448 Semiconductor Corp. SURFACE MOUNT ULTRAmini™ HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD4448 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini™ surface mount


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    CMUD4448 OT-523 100mA CPD63 30-November OT-523 diode marking code 540 DIODE MARKING 541 PDF

    BAT86S

    Abstract: BAT86S-TAP BAT86S-TR DO35
    Contextual Info: BAT86S Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 9367


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    BAT86S 2002/95/EC 2002/96/EC TR/10 TAP/10 BAT86S-TR BAT86S-TAP D-74025 BAT86S BAT86S-TAP DO35 PDF

    6264

    Abstract: SVC383 marking V3
    Contextual Info: Ordering number:ENN6264 Diffused Junction Type Silicon Composite Varactor SVC383 AM Low Voltage Electronic Tuning Applications Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · Low voltage 6.5V . · High Q.


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    ENN6264 SVC383 SVC383 SVC383-applied SVC383] 6264 marking V3 PDF

    Contextual Info: Product specification BAR 63;BAR63-04 BAR 63-05;BAR63-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward resistance 0.55 PIN diode for high speed switching of RF signals +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Very low capacitance


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    BAR63-04 BAR63-06 OT-23 BAR63 PDF

    SMD MARKING g5 sot

    Abstract: smd diode g6 smd diode g5 smd marking rs SMD MARKING g5 SMD MARKING g4 marking G3 maxim package marking SMD MARKING g3 6305
    Contextual Info: Diodes SMD Type Silicon PIN Diode BAR 63;BAR63-04 BAR 63-05;BAR63-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward resistance 0.55 PIN diode for high speed switching of RF signals +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


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    BAR63-04 BAR63-06 OT-23 BAR63 SMD MARKING g5 sot smd diode g6 smd diode g5 smd marking rs SMD MARKING g5 SMD MARKING g4 marking G3 maxim package marking SMD MARKING g3 6305 PDF

    1N4150

    Abstract: 1N4150-TAP 1N4150-TR DO35 1n4150 vishay
    Contextual Info: 1N4150 Vishay Semiconductors Small Signal Fast Switching Diodes Features • • • • • Silicon Epitaxial Planar Diode Low forward voltage drop e2 High forward current capability Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


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    1N4150 2002/95/EC 2002/96/EC TR/10 TAP/10 1N4150-TR 1N4150-TAP 08-Apr-05 1N4150 1N4150-TAP DO35 1n4150 vishay PDF

    general semiconductor DIODE SOD80

    Abstract: melf diode color code
    Contextual Info: LS4150 Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Electrical data identical with the device e2 1N4150 • Quadro MELF package • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


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    LS4150 1N4150 2002/95/EC 2002/96/EC GS18/10 GS08/2 LS4150 LS4150-GS18 LS4150-GS08 08-Apr-05 general semiconductor DIODE SOD80 melf diode color code PDF

    CDBU0230R-HF

    Contextual Info: SMD Schottky Barrier Diode CDBU0230R-HF I o = 200 mA V R = 30 Volts RoHS Device Halogen Free 0603/SOD-523F Features 0.071 1.80 0.063(1.60) - Low reverse current. -Designed for mounting on small surface. 0.039(1.00) 0.031(0.80) -Extremely thin / leadless package.


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    CDBU0230R-HF 0603/SOD-523F 0603/SOD-523F MIL-STD-750 OD-523F) QW-G1057 CDBU0230R-HF PDF

    Contextual Info: SMD Schottky Barrier Diode CDBERT0230R I o = 200 mA V R = 30 Volts RoHS Device 0503/SOD-723F Features 0.053 1.35 0.045(1.15) -Low reverse current. -Designed for mounting on small surface. -Extremely thin / leadless package. 0.034(0.85) 0.026(0.65) -Majority carrier conduction.


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    CDBERT0230R 0503/SOD-723F 0503/SOD-723F MIL-STD-750 Typ13 OD-723F) QW-A1121 PDF

    CDBQR0230R-HF

    Contextual Info: SMD Schottky Barrier Diode CDBQR0230R-HF I o = 200 mA V R = 30 Volts RoHS Device Halogen Free 0402/SOD-923F Features 0.041 1.05 0.037(0.95) -Low reverse current. -Designed for mounting on small surface. -Extremely thin / leadless package. 0.026(0.65) 0.022(0.55)


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    CDBQR0230R-HF 0402/SOD-923F /SOD-923F MIL-STD-750 OD-923F) QW-G1097 CDBQR0230R-HF PDF

    Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBERT0230R RoHS Device Io = 200 mA V R = 30 Volts 0503(1308) Features 0.053(1.35) 0.045(1.15) Low reverse current. Designed for mounting on small surface. 0.034(0.85) 0.026(0.65) Extremely thin / leadless package.


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    CDBERT0230R MIL-STD-750 ERT/0503 QW-A1121 PDF

    A1117

    Abstract: QW-A1117 A1117 -3.3V SMD Schottky Barrier Diode 0402 smd marking bb
    Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR0230R RoHS Device Io = 200 mA V R = 30 Volts 0402(1005) Features 0.041(1.05) 0.037(0.95) Low reverse current. Designed for mounting on small surface. 0.026(0.65) 0.022(0.55) Extremely thin / leadless package.


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    CDBQR0230R MIL-STD-750 QR/0402 QW-A1117 CDBQR0230R A1117 QW-A1117 A1117 -3.3V SMD Schottky Barrier Diode 0402 smd marking bb PDF

    Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR0230R-HF RoHS Device Io = 200 mA V R = 30 Volts 0402(1005) Features 0.041(1.05) 0.037(0.95) Halogen free. Low reverse current. 0.026(0.65) 0.022(0.55) Designed for mounting on small surface. Extremely thin / leadless package.


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    CDBQR0230R-HF MIL-STD-750 QR/0402 QW-G1097 PDF