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Bourns Inc
PM0805-33NM-RC FIXED IND 33NH 500MA 150MOHM SMD
PM0805-33NM-RC ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key (3) PM0805-33NM-RC Digi-Reel 155 1 $0.38 $0.341 $0.2345 $0.15351 $0.15351 More Info
PM0805-33NM-RC Cut Tape 155 1 $0.38 $0.341 $0.2345 $0.15351 $0.15351 More Info
PM0805-33NM-RC Reel 0 2,000 - - - - $0.12834 More Info
Avnet Americas PM0805-33NM-RC Reel 0 25 Weeks 2,000 - - - - $0.11261 More Info
Onlinecomponents.com PM0805-33NM-RC 0 - - - - $0.104 More Info
Bourns Inc
PM0805-33NM FIXED IND 33NH 500MA 270MOHM SMD
PM0805-33NM ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key (2) PM0805-33NM Cut Tape 0 1 $0.22 $0.22 $0.22 $0.22 $0.22 More Info
PM0805-33NM Reel 0 4,000 - - - - $0.081 More Info
Pulse Electronics Corporation
BKPB002012C533NMA2 INDUCTOR POWER
BKPB002012C533NMA2 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key BKPB002012C533NMA2 Reel 0 - - - - - More Info
Avnet Americas BKPB002012C533NMA2 Reel 0 12 Weeks 99,000 - - - - - More Info
Onlinecomponents.com BKPB002012C533NMA2 0 - - - - $0.078 More Info
JW Miller
PM0805-33NM-RC CHIP INDUCTOR, 33nH, 500mA, 20%, 2.05GHZ; Inductance:33nH; DC Resistance Max:0.15ohm; Self Resonant Frequency:2.4GHz; DC Current Rating:500mA; Inductor Case / Package:0805 [2012 Metric]; Product Range:PM0805 Series RoHS Compliant: Yes
PM0805-33NM-RC ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark PM0805-33NM-RC TAPE & REEL CUT 0 2,000 - - $0.23 $0.23 $0.23 More Info
Bristol Electronics PM0805-33NM-RC 1,970 7 - $0.75 $0.375 $0.15 $0.15 More Info
JW Miller
PM0805-33NM
PM0805-33NM ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics PM0805-33NM 6,000 7 - $0.75 $0.375 $0.15 $0.1013 More Info

533nm Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: : PASSIVATION: (2261 nm x 2235nm x 533nm ±51 urn) Type: Silox (Sj02) 89 x 88 x 21 mils Â


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PDF HCS74T 100kRAD MIL-PRF-38535 HCS74Ts 1-800-4-HARR
Not Available

Abstract: No abstract text available
Text: : Sapphire (2440nm x 2970nm x 533nm ±51 urn) 96 x 1 1 7 x 2 1 mils ±2mil PASSIVATION


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PDF ACTS245T 100kRAD MIL-PRF-38535 1-800-4-HARR
26CT32RH

Abstract: No abstract text available
Text: Characteristics DIE DIMENSIONS: BACKSIDE FINISH: 2140nm x 3290nm x 533nm ±25.4nm (85 x 1 3 0 x 2 1 mils Â


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PDF HS-26CT32RH-T MIL-PRF-38535 100kRAD 100MeV/mg/cm2 RS-422 HS-26CT32RH-T 1-800-4-HARRIS 26CT32RH
Not Available

Abstract: No abstract text available
Text: PIN 8 Die Characteristics DIE DIMENSIONS: PASSIVATION: (2540nm x 1753nm x 533nm Â


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PDF CD4504BT MIL-PRF-38535 100kRAD 1-800-4-HARR
Not Available

Abstract: No abstract text available
Text: Silicon Gate, Dielectric Isolation DIE DIMENSIONS: 1720nm x 1390nm x 533nm ±25.4nm (68 mils x 55


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PDF HS-3530ARH HS-3530ARH 1-800-4-HARRIS
Not Available

Abstract: No abstract text available
Text: DIE DIMENSIONS: PASSIVATION: (2743nm x 2692nm x 533nm ±51 urn) Type: Silox (Sj02) 108 x 1


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PDF HCTS244T 100kRAD MIL-PRF-38535 HCTS244T 1-800-4-HARRIS
Truth Table 74160

Abstract: Truth Table 74161
Text: : (2642nm x 2184nm x 533nm ±51 .Oum) Type: Silox (Sj02) 1 0 4 x 8 6 x 2 1 mils ±2mil Thickness: 1


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PDF HCTS160T MIL-PRF-38535 100kRAD HCTS160T 1-800-4-HARRIS Truth Table 74160 Truth Table 74161
Not Available

Abstract: No abstract text available
Text: : BACKSIDE FINISH: (2540nm x 2540nm x 533nm ±51 urn) 100 x 1 0 0 x 2 1 mils ±2mil Sapphire


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PDF ACTS240T 100kRAD MIL-PRF-38535 1-800-4-HARRIS
Not Available

Abstract: No abstract text available
Text: Characteristics DIE DIMENSIONS: PASSIVATION: (2743nm x 2692nm x 533nm ±51 urn) Type: Siiox (Sj02


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PDF HCTS373T 100kRAD MIL-PRF-38535 HCTS373T 1-800-4-HARR
Not Available

Abstract: No abstract text available
Text: Characteristics DIE DIMENSIONS: PASSIVATION: (3149nm x 2794nm x 533nm ±51 urn) Type: Siiox (Sj02


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PDF HCTS245T 100kRAD MIL-PRF-38535 HCTS245T 1-800-4-HARRIS
Not Available

Abstract: No abstract text available
Text: . 2 ACTS573T Die Characteristics DIE DIMENSIONS: PASSIVATION: (2600nm x 2600nm x 533nm Â


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PDF ACTS573T 100kRAD MIL-PRF-38535 ACTS573T 1-800-4-HARRIS
Not Available

Abstract: No abstract text available
Text: Characteristics DIE DIMENSIONS: PASSIVATION: (3149nm x 2794nm x 533nm ±51 urn) Type: Siiox (Sj02


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PDF HCTS245T 100kRAD MIL-PRF-38535 1-800-4-HARR
26CT32RH

Abstract: No abstract text available
Text: -26CT32RH-T Die Characteristics DIE DIMENSIONS: BACKSIDE FINISH: 2140nm x 3290nm x 533nm ±25.4nm (85 x 1


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PDF HS-26CT32RH-T MIL-PRF-38535 100kRAD 100MeV/mg/cm2 RS-422 1-800-4-HARR 26CT32RH
Not Available

Abstract: No abstract text available
Text: HCTS374T Die Characteristics DIE DIMENSIONS: PASSIVATION: (2743nm x 2692nm x 533nm ±51 urn


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PDF HCTS374T MIL-PRF-38535 100kRAD HCTS374T 1-800-4-HARRIS
Not Available

Abstract: No abstract text available
Text: : (2743nm x 2692nm x 533nm ±51 urn) Type: Silox (Sj02) 108 x 1 0 6 x 2 1 mils ±2mil Thickness: 1


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PDF HCTS374T MIL-PRF-38535 100kRAD HCTS374T 1-800-4-HARR
Not Available

Abstract: No abstract text available
Text: Vs s = PIN 8 Die Characteristics DIE DIMENSIONS: PASSIVATION: (2540nm x 1753nm x 533nm Â


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PDF CD4504BT MIL-PRF-38535 100kRAD CD4504BT 1-800-4-HARRIS
SMD TRANSISTOR Y1 data sheet

Abstract: No abstract text available
Text: 533nm ±51 .Oum) Type: Silox (Sj02) 108 x 1 0 6 x 2 1 mils ±2mil Thickness: 1 3 .0 k A ± 2 .6


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PDF HCS244T 100kRAD MIL-PRF-38535 HCS244T 1-800-4-HARRIS SMD TRANSISTOR Y1 data sheet
Not Available

Abstract: No abstract text available
Text: 533nm ±51 urn) Sapphire 96 x 1 1 7 x 2 1 mils ±2mil PASSIVATION: METALLIZATION: Type


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PDF ACTS245T 100kRAD MIL-PRF-38535 1-800-4-HARRIS
HS-1840ARH

Abstract: No abstract text available
Text: 533nm ±25.4nm Silicon (97 x 1 9 5 x 2 1 mils ±1 mil) PASSIVATION: METALLIZATION: Type


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PDF HS-26C31RH-T MIL-PRF-38535 100kRAD 100MeV/mg/cm2 RS-422 1-800-4-HARR HS-1840ARH
Not Available

Abstract: No abstract text available
Text: DIE DIMENSIONS: PASSIVATION: (2743nm x 2692nm x 533nm ±51 urn) Type: Silox (Sj02) 108 x 1


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PDF HCTS244T 100kRAD MIL-PRF-38535 HCTS244T 1-800-4-HARRIS
Not Available

Abstract: No abstract text available
Text: : PASSIVATION: 2261 nm x 2235nm x 533nm ±51 urn) Type: Silox (Sj02) 89 x 88 x 21 mils Â


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PDF HCTS109T 100kRAD MIL-PRF-38535 HCTS109T 1-800-4-HARR
Not Available

Abstract: No abstract text available
Text: Characteristics DIE DIMENSIONS: PASSIVATION: (2032nm x 2489nm x 533nm ±25.4nm) Type: Phosphorus Doped


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PDF CD4015BT 100kRAD MIL-PRF-38535 12MHz CD4015BT 1-800-4-HARR
Not Available

Abstract: No abstract text available
Text: Characteristics DIE DIMENSIONS: PASSIVATION: (2747nm x 2693nm x 533nm ±51 .Oum) Type: Siiox (Sj02


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PDF HCS373T 100kRAD MIL-PRF-38535 HCS373T 1-800-4-HARR
Not Available

Abstract: No abstract text available
Text: Characteristics DIE DIMENSIONS: PASSIVATION: (2600nm x 2600nm x 533nm ±51 urn) Type: Silox (Sj02


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PDF ACTS573T 100kRAD MIL-PRF-38535 1-800-4-HARR
Not Available

Abstract: No abstract text available
Text: : (2261 nm x 2235nm x 533nm ±51 urn) Type: Silox (Sj02) 89 x 88 x 21 mils ±2mil Thickness: 1 3


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PDF HCS74T 100kRAD MIL-PRF-38535 HCS74T 1-800-4-HARRIS
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