52M DIODE Search Results

Contextual Info: CEM3317 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -6.2A, RDS ON = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. -30V, -4.9A, RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).

Contextual Info: Ordering number : ENA1401A CPH5871 N-Channel Power MOSFET 30V, 3.5A, 52mΩ, Single CPH5 with Schottky Diode http://onsemi.com Features • • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting

Contextual Info: AP2615GY-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Fast Switching Characteristic D BVDSS -30V RDS ON Lower Gate Charge Small Footprint & Low Profile Package 52m ID G RoHS Compliant & Halogen-Free -5A

GTT6405

Contextual Info: Pb Free Plating Product ISSUED DATE :2007/01/17 REVISED DATE : GTT6405 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID -30V 52m -5.0A Description The GTT6405 uses advanced trench technology to provide excellent on-resistance with low gate change.

Contextual Info: AP2607GY-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device ▼ Halogen Free & RoHS Compliant Product BVDSS -20V RDS ON 52mΩ ID

Contextual Info: AP2607AGY-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device ▼ Halogen Free & RoHS Compliant Product BVDSS -20V RDS ON 52mΩ

Contextual Info: AP9565BGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D -40V RDS ON Simple Drive Requirement Fast Switching Characteristic 52m ID G -17A RoHS Compliant & Halogen-Free S Description

Contextual Info: AP2607GY-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device ▼ Halogen Free & RoHS Compliant Product BVDSS -20V RDS ON 52mΩ ID

Contextual Info: AP2607AGY-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D BVDSS -20V RDS ON Small Package Outline Surface Mount Device ID G Halogen Free & RoHS Compliant Product 52m -5A S S Description

Contextual Info: AP2607GY-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D BVDSS -20V RDS ON Small Package Outline Surface Mount Device ID G Halogen Free & RoHS Compliant Product 52m -5A S S Description

Contextual Info: AP2607AGY-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device ▼ Halogen Free & RoHS Compliant Product BVDSS -20V RDS ON 52mΩ

AP9565BGJ

Abstract: AP9565
Contextual Info: AP9565BGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS -40V RDS ON 52mΩ ID

Contextual Info: AP2607GY-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device ▼ Halogen Free & RoHS Compliant Product BVDSS -20V RDS ON 52mΩ ID

G3407

Contextual Info: Pb Free Plating Product CORPORATION G3407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2007/01/15 REVISED DATE : BVDSS RDS ON ID -30V 52m -4.1A Description The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change.

GJ20P02

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/12/05 REVISED DATE : GJ20P02 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -20V 52m -18A Description The GJ20P02 provide the designer with the best combination of fast switching, ruggedized device design, low

GI20N03

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GI20N03 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 52m 20A Description The GI20N03 provide the designer with the best combination of fast switching, ruggedized device design, low

GI20P02

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/12/05 REVISED DATE : GI20P02 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -20V 52m -18A Description The GI20P02 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: AP20P02GS/P Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ 2.5V Gate Drive Capability ▼ Fast Switching -20V RDS ON 52mΩ ID G ▼ RoHS compliant BVDSS -18A S Description

Contextual Info: Single P-channel MOSFET ELM13407CA-S •General description ■Features ELM13407CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-4.1A (Vgs=-10V) Rds(on) < 52mΩ (Vgs=-10V)

Contextual Info: Single P-channel MOSFET ELM13407CA-S •General description ■Features ELM13407CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-4.1A (Vgs=-10V) Rds(on) < 52mΩ (Vgs=-10V)

GJ20N03

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GJ20N03 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 52m 20A Description The GJ20N03 provide the designer with the best combination of fast switching, ruggedized device design, low

GE20N03

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GE20N03 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 52m 20A Description The GE20N03 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: Single P-channel MOSFET ELM16405EA-S •General description ■Features ELM16405EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 52mΩ (Vgs=-10V)

GSS9980

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/11/16 REVISED DATE : GSS9980 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 80V 52m 4.6A Description The GSS9980 provide the designer with the best combination of fast switching, ruggedized device design, low