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52B13-200
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Seeq Technology
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Electrically Erasable ROM |
Scan |
PDF
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531.36KB |
2 |
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52B13-250
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Seeq Technology
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Electrically Erasable ROM |
Scan |
PDF
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531.36KB |
2 |
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52B13-3
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Seeq Technology
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2K x 8 nMOS EPROM Memory |
Scan |
PDF
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80.29KB |
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52B13-350
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Seeq Technology
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Electrically Erasable ROM |
Scan |
PDF
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531.36KB |
2 |
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52B13/H-200
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Seeq Technology
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2K x 8 nMOS EPROM Memory |
Scan |
PDF
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80.29KB |
2 |
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52B13H-200
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Seeq Technology
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Electrically Erasable ROM |
Scan |
PDF
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531.36KB |
2 |
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52B13/H-250
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Seeq Technology
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2K x 8 nMOS EPROM Memory |
Scan |
PDF
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80.29KB |
2 |
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52B13H-250
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Seeq Technology
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Electrically Erasable ROM |
Scan |
PDF
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531.36KB |
2 |
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52B13/H-350
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Seeq Technology
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2K x 8 nMOS EPROM Memory |
Scan |
PDF
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80.29KB |
2 |
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52B13H-350
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Seeq Technology
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Electrically Erasable ROM |
Scan |
PDF
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531.36KB |
2 |
BZT52B13
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Shikues Semiconductor
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Plastic-Encapsulate Diodes: Planar Die, 500mW on Ceramic PCB, General Purpose, Lead Free. |
Original |
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BZT52B13S
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JCET Group
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SOD-323 surface-mount Zener diode with planar die construction, available in lead-free version, 200 mW power dissipation, and zener voltage range from 2.4V to 39V, suited for automated assembly processes. |
Original |
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BZT52B13
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Jiangsu JieJie Microelectronics Co Ltd
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Silicon Zener diodes in SOD-123 package with 500mW power rating, voltage range from 5.1V to 43V, ±2% tolerance, low zener impedance, and surge current capability for stabilization and clamping applications. |
Original |
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BZT52B13BS
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SLKOR
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400mW, 3.0-51V, ±2% Vz, 400mW, SOD-323, -55°C to +150°C, UL 94 V-0, RoHS. |
Original |
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BZT52B13
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JCET Group
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SOD-123 surface mount Zener diode with 350 mW power dissipation, featuring planar die construction, available in various breakdown voltages from 2.4 V to 43 V, suitable for general purpose medium current applications and automated assembly processes. |
Original |
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AD-BZT52B13S
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JCET Group
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AD-BZT52B*S series is a plastic-encapsulated Zener diode featuring planar die construction, 200 mW power dissipation, AEC-Q101 qualification, and operating junction temperature from -55 to 150 °C.AD-BZT52B*S series Zener diodes in SOD-323 package feature planar die construction, 200 mW power dissipation, AEC-Q101 qualification, and operating junction temperature from -55 to 150 °C. |
Original |
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BZT52B13S
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Jiangsu JieJie Microelectronics Co Ltd
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Silicon planar Zener diode in SOD-323 surface mount package with 200 mW power dissipation, available in BZT52BxxxS series with tight voltage tolerance and low zener impedance.Silicon planar Zener diodes in SOD-323 surface mount package with 200mW power dissipation, available in BZT52BxxxS series with tight voltage tolerance and low zener impedance.Silicon planar Zener diodes in SOD-323 surface mount package with 200mW power dissipation, available in BZT52BxxxS series with tight voltage tolerance and low zener impedance.Silicon planar Zener diodes in SOD-323 surface mount package with 200mW power dissipation, offering zener voltages from 5.1V to 43V, low reverse leakage current, and high reliability for general-purpose voltage regulation applications.Silicon planar Zener diode in SOD-323 surface mount package, 200 mW power dissipation, zener voltage range 5.1V to 43V, with low reverse leakage current and high reliability for general-purpose regulation.Silicon planar Zener diodes in SOD-323 surface mount package with 200mW power dissipation, available in various breakdown voltages from 5.1V to 43V with tight tolerance and low zener impedance.Silicon planar Zener diodes in SOD-323 surface mount package with 200mW power dissipation, available in various breakdown voltages from 5.1V to 43V with tight tolerance and low zener impedance. |
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BZT52B13
