52AP 6 Search Results

52AP

Abstract: 52AP 6
Contextual Info: Philips Semiconductors Preliminary specification Microcontroller'1Te'eCOm PC03351A/52A/53A FEATURES • 8-bit CPU, ROM, RAM, I/O in a single 28-lead package • 2 k ROM bytes; 64 RAM bytes PCD3351 A • 4 k ROM bytes; 128 RAM bytes (PCD3352A) • 6 k ROM bytes; 128 RAM bytes (PCD3353A)

PCD3351AP

Abstract: MAB8048 PCD3351A PCD3352A PCD3353A PCD33XXA
Contextual Info: Philips Semiconductors Preliminary specification Single-chip 8-bit Telecom Microcontroller c FEATURES • 8-bit CPU, ROM, RAM, I/O in a single 28-lead package • 2 k ROM bytes; 64 RAM bytes PCD3351A • 4 k ROM bytes; 128 RAM bytes (PCD3352A) • 6 k ROM bytes; 128 RAM bytes (PCD3353A)

MAB8048

Abstract: 52AP PCD3351A PCD3352A PCD3353A PCD33XXA
Contextual Info: Philips Sem iconductors Prelim inary specification Single-chip 8-bit Telecom Microcontroller PCD3351 A/52 A/53 A F O R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE O F H A N D B O O K IC 0 3 O R D A T A S H E E T FEATURES • 8-bit CPU, ROM, RAM, I/O in a single 28-lead

fdn352ap

Abstract: 52AP notebook battery pinout smart fdn352
Contextual Info: FDN352AP Single P-Channel, PowerTrench MOSFET Features General Description • –1.3 A, –30V –1.1 A, –30V RDS ON = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has

52AP

Abstract: marking 52AP 52AP 6 fdn352
Contextual Info: FDN352AP Single P-Channel, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate

52AP

Abstract: 52AP 6 SOT-23 1B FDN352AP marking 52AP
Contextual Info: FDN352AP Single P-Channel, PowerTrench MOSFET Features General Description • –1.3 A, –30V –1.1 A, –30V RDS ON = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has

Contextual Info: FDN352AP Single P-Channel, PowerTrench MOSFET Features General Description • –1.3 A, –30V RDS ON = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package.

R5402

Abstract: C5123 C563 c5129 U-527 RC5480 quanta computer C5480 C5421 st c529
Contextual Info: 5 4 3 2 1 V C C5 01 12V C563 1 0 U / 6 .3 V Data Access C562 0 .1 U V CC3 2 L T S T -C1 9 0 K GK T D7 R11 1 4 M_ CODEC -W L S W -W L L ED M S _LED M C_P W R M S _ CL K M S _ DA T A 3 M C_CD# M S _ DA T A 2 M S _ S DIO M S _ DA T A 1 MS _ B S 2 2 70 L T S T -C1 9 0 K GK T

gcu 101 setting manual

Abstract: sp8k10 2TT24 6-71-M52N0-D03 sp8k10s PCI7412 cd 208 PIR ED89 RSS090 st DB3 C502
Contextual Info: Preface Notebook Computer M520N/M521N Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are