5209 3.3 Search Results

CY7C09349V

Abstract: CY7C09359V
Contextual Info: fax id: 5209 51 CY7C09349V CY7C09359V ADVANCED INFORMATION 3.3V 4K/8K x 18 Synchronous Dual Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 2 Flow-Through/Pipelined devices — 4K x 18 organization CY7C09349V

5209 3.3V

Abstract: CY7C09349V CY7C09359V
Contextual Info: fax id: 5209 51 CY7C09349V CY7C09359V PRELIMINARY 3.3V 4K/8K x 18 Synchronous Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 2 Flow-Through/Pipelined devices — 4K x 18 organization CY7C09349V

A12L

Abstract: CY7C09349V CY7C09359V
Contextual Info: fax id: 5209 51 CY7C09349V CY7C09359V PRELIMINARY 3.3V 4K/8K x 18 Synchronous Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 2 Flow-Through/Pipelined devices — 4K x 18 organization CY7C09349V

RH1078MH

Abstract: amp burn-in op 373 MIL-PRF38535 RH1078M
Contextual Info: SPEC NO. 05-08-5209 REV. 0 RH1078MH, DICE Micropower, Dual, Single Supply Precision Op Amp REVISION RECORD REV DESCRIPTION DATE INITIAL RELEASE 06/01/06 ` CAUTION: ELECTROSTATIC DISCHARGE SENSITIVE PART REVISION INDEX REVISION INDEX PAGE NO. REVISION PAGE NO.

Contextual Info: fax id: 5209 CYPRESS ADVANCED INFORMATION CY7C09349V CY7C09359V 3.3V 4K /8K x 18 Synchronous Dual Port Static RAM • High-speed clock to data access 10/12 ns max. • 3.3V Low operating power — Actives 135 mA (typical) Features • True Dual-Ported memory celts which allow simulta­

amp burn-in

Contextual Info: SPEC NO. 05-08-5209 REV. B RH1078M, DICE Micropower, Dual, Single Supply Precision Op Amp REVISION RECORD REV DESCRIPTION DATE INITIAL RELEASE 06/01/06 A • PAGE 3, PARAGRAPH 3.7.1 CHANGED VERBIAGE • PAGE 4, PARAGRAPH 5.8 CHANGED ALLOY 42 TO KOVAR REQUIRED ON TO5

5209 3.3 3 pin Ic

Contextual Info: fax id: 5209 ^CYPRESS CY7C09349V CY7C09359V PRELIMINARY 3.3V 4K/8K x 18 Synchronous Dual-Port Static RAM • High-speed clock to data access 7.5/12 ns max. • 3.3V Low operating power Features • True Dual-Ported mem ory cells which allow sim ulta­ neous access of the same mem ory location

Contextual Info: fax id: 5209 CY7C09349V CY7C09359V :/ C Y P R E S S 3.3V 4K/8K x 18 Synchronous Dual-Port Static RAM • High-speed clock to data access 7.5/12 ns max. • 3.3V Low operating power Features • True Dual-Ported m em ory cells which allow simulta­ neous access of the same memory location

transistor P07 smd

Abstract: zener diode DS5 smd diode zener code pj HSDL-4261 transistor SMD P32 pec02saan transistor SMD p16 y1 smd transistor transistor smd po3 2N3904G
Contextual Info: 19-5209; Rev 1; 5/10 MAXQ622 Evaluation Kit The MAXQ622 evaluation kit EV kit provides a proven platform for conveniently evaluating the capabilities of the MAXQ622 low-power, 16-bit, RISC microcontroller with USB interface targeted for battery-powered applications. The EV kit includes the MAXQ622 EV kit board,

RH1078MH

Abstract: ic 5209 datasheet TO5 package RH1078 MIL-PRF38535 RH1078M TM1019
Contextual Info: SPEC NO. 05-08-5209 REV. A RH1078MH, DICE Micropower, Dual, Single Supply Precision Op Amp REVISION RECORD REV DESCRIPTION DATE INITIAL RELEASE 06/01/06 A • • 05/06/08 PAGE 3, PARAGRAPH 3.7.1 CHANGED VERBIAGE PAGE 4, PARAGRAPH 5.8 CHANGED ALLOY 42 TO KOVAR REQUIRED ON TO5

A12L

Abstract: CY7C09349V CY7C09359V
Contextual Info: fax id: 5209 CYPRESS CY7C09349V CY7C09359V PRELIMINARY 3.3V 4K/8K x 18 Synchronous Dual-Port Static RAM • H ig h-speed clo ck to d ata ac ce ss 7.5/12 ns m ax. Features • 3.3V Low o p e ratin g p ow er • True D u al-P o rted m e m o ry cells w h ich allo w sim u lta­

SMD MARKING GP TRANSISTOR

Abstract: AEB02786 AEP02785 AES02790 AET02787 AET02788 AET02789 P-DSO-20-12 5209 3.3 3 pin Ic TRANSISTOR st2
Contextual Info: H-Bridge for DC-Motor Applications TLE 5209 GP Data Sheet Version 1.0 1 Overview 1.1 Features • • • • • • • • • • • • Delivers up to 5 A continuous Current limit at max 7.5 A Optimized for DC motor management applications Operates at supply voltages from 5.2 V up to 40 V

Contextual Info: H-Bridge for DC-Motor Applications TLE 5209 GP Data Sheet Version 1.0 1 Overview 1.1 Features • • • • • • • • • • • • Delivers up to 5 A continuous Current limit at max 7.5 A Optimized for DC motor management applications Operates at supply voltages from 5.2 V up to 40 V

5209 3.3

Abstract: TDCS 5209 3.3 3 pin Ic
Contextual Info: H-Bridge for DC-Motor Applications TLE 5209 GP Data Sheet Version 1.0 1 Overview 1.1 Features • • • • • • • • • • • • Delivers up to 5 A continuous Current limit at max 7.5 A Optimized for DC motor management applications Operates at supply voltages from 5.2 V up to 40 V

DL47

Contextual Info: SENSITRON SEMICONDUCTOR
 
Green Products Data Sheet 5209, Rev. -
 

  3.3-100V




    0.5W
  0.110 2.8 0.102(2.6) *+ $  $% * ( $, % -  .  /($%$ 0    ( 

Contextual Info: 7UDQVLPSHGDQFH $PSOLILHU %RDUG 'LJLERDUG LJ  %RDUG RYHUYLHZ 'HVFULSWLRQ Most applications of photodiodes and especially those in the ultraviolet wavelength range require special amplifiers because of the small photocurrents. Although the uv-sensors of VJOX[ provide large

CURRENT-TO-FREQUENCY

Contextual Info: Transimpedance Amplifier Board Digiboard Fig. 1: Board overview Description Most applications of photodiodes and especially those in the ultraviolet wavelength range require special amplifiers because of the small photocurrents. Although the uv-sensors of sglux provide large

Datasheet of ic 7660

Abstract: 8930
Contextual Info: Frequency Mixer ZX05-14+ Typical Performance Curves Conversion Loss @ IF=30MHz 22 LO = +4dBm 20 Conversion Loss dB LO = +7dBm 18 LO = +10dBm 16 14 12 10 8 6 4 2700 3940 5180 6420 7660 8900 10140 11380 12620 13860 15100 RF Frequency (MHz) Conversion Loss vs. IF @ RF=6850MHz

aa628

Abstract: AP-24
Contextual Info: M55 Sect 1 4-08 Rev6 ap24-27:M55 Sect 1 final 4/18/08 9:53 AM Page 24 REFER TO PAGE 5 FOR PART DIMENSIONS NOTE: ALL MOUNTING DIMENSIONS ARE FOR REFERENCE ONLY. PLEASE VERIFY YOUR BATTERY LAYOUT PRIOR TO FABRICATION. FIGURE 1 Mounting Detail BATTERY CONTACTS LAYOUT & MOUNTING DETAILS

DATASHEET 5609 transistor

Abstract: 2248 2249 5609 transistor 7004 001 transistor 2482 transistor 5609 T110A565K006AS T110A685J006AS T110A685K006AS
Contextual Info: 120Hz 6 VOLT RATING AT 85°C — 4 2.2 3.3 3.3 3.9 4.7 5.6 5.6 5.6 6.8 6.8 6.8 08-Jan 10.0 12.0 15.0 18.0 22.0 27.0 33.0 39.0 47.0 47.0 47.0 56.0 56.0 56.0 68.0 82.0 100.0 120.0 150.0 150.0 150.0 180.0 180.0 180.0 220.0 270.0 270.0 270.0 330.0 330.0 330.0

tensolite

Abstract: B196 MIL-F-14256 QQ-P-35 ZZ-R-765
Contextual Info: TENSOLITE CABLE ASSEMBLY 18 GHz SMA MALE TO SMA MALE ON 620 SEMI-FLEX R CABLE TECHNICAL DATA SHEET ELECTRICAL SPECIFICATIONS IMPEDANCE, NOMINAL: 50 OHMS CAPACITANCE NOMINAL: 28.7 pf/FOOT VELOCITY OF PROPAGATION, NOMINAL: 70.7 % RELATIVE SHIELDING: -100 dB MIN.

QQ-P-35

Abstract: MIL-F-14256 QQ-S-571 ZZ-R-765 tensolite* connec
Contextual Info: TENSOLITE CABLE ASSEMBLY SMA MALE TO SMA MALE RT < ON 621 JACKETED SEMI-FLEX R CABLE. TECHNICAL DATA SHEET ELECTRICAL SPECIFICATIONS IMPEDANCE, NOMINAL: 50 OHMS CAPACITANCE NOMINAL: 28.70 pf/FOOT VELOCITY OF PROPAGATION, NOMINAL: 70.7 % RELATIVE SHIELDING:

Contextual Info: m o le x 2.50mm .098" Pitch SPOX FEATURES AND SPECIFICATIONS Features and Benefits Electrical • Anti-fishhooking contact design ■ 4 points of contact ■ Low profile Voltage: 250V Current: AWG Amperes 2.00 to 2.50mm (.079 to .0 9 8 ") Pitch Reference Information

QQ-P-35

Abstract: ZZ-R-765
Contextual Info: TENSOLITE CABLE ASSEMBLY SMA MALE TO SMA MALE ON 621 SEMI-FLEX R PLUS CABLE. TECHNICAL DATA SHEET ELECTRICAL SPECIFICATIONS IMPEDANCE, NOMINAL: 50 OHMS CAPACITANCE NOMINAL: 28.7 pf/FOOT VELOCITY OF PROPAGATION, NOMINAL: 70.7 % RELATIVE SHIELDING: -100 dB MIN.