51A SO 8 Search Results

fast diode SOT-227

Contextual Info: APT8011JFLL 800V 51A 0.110W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package

k300k1

Abstract: K51A ALIMENTATION LIGHT DIODE wave guide noise diode fiesta de8h Scans-0017953 "noise diode"
Contextual Info: PHILIPS K 51A R a r e gas f i l l e d MO TSE D FODE f o r u se i n wave guide systems a t th e 10 cm wave band DFODE DE SO U FF LE à gaz r a r e p o u r u t i l i s a t i o n d a n s l e s d i s p o s i t i f s , à g u id e d 'o n d e s dans l a gamme 10 cm

p65C51

Contextual Info: HARRIS SEMÏCOND SECTOR [£ } MGE D m 4302271 Q0332fi3 T E2JHAS H L A J R R IS c CD January 1991 CMOS Asynchronous Communications -0 5 Interface A dapter ACIA Features • • • • • • • • • • • • • • • P in o u t C o m patible W ith 8 -B lt M icroprocessors

45V7

Abstract: AN-994 IRL3402 IRL3402S
Contextual Info: PD - 9.1693 IRL3402S PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G ID = 85A† S Description These HEXFET Power MOSFETs were designed

Contextual Info: APT8011JFLL 800V 51A 0.125Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT8011JFLL 800V 51A 0.125Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8011JFLL

Contextual Info: APT8011JFLL 800V 51A 0.110Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8011JFLL

Contextual Info: APT8011JFLL 800V 51A 0.125Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

CDP65C51

Abstract: diagram remote control receiver and transmitter CDP65C51A CDP65 CDP65C51A-4
Contextual Info: 1 h a f r f J a n u a ry 1 9 9 1 r i C D P 6 5 C 51 C D P 65C 51A s CMOS Asynchronous Communications Interface A dapter (ACIA) P in o u t F e a tu re s • • • • • • » • • • • • • • • C o m p a tib le W ith 8 - B it M ic ro p ro c e s s o rs

IRL3402

Abstract: MOSFET 700V TO 220
Contextual Info: PD - 9.1697 IRL3402 PRELIMINARY HEXFET Power MOSFET l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G Description ID = 85A… S These HEXFET Power MOSFETs were designed

Contextual Info: APT8011JLL 800V 51A 0.110Ω R POWER MOS 7 S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

CDP65C51A

Abstract: CDP65C51
Contextual Info: 1 h a f r f J a n u a ry 1 9 9 1 r i C D P 6 5 C 51 C D P 65C 51A s CMOS Asynchronous Communications Interface A dapter (ACIA) P in o u t F e a tu re s • • • • • • » • • • • • • • • C o m p a tib le W ith 8 - B it M ic ro p ro c e s s o rs

APT8011JLL

Contextual Info: APT8011JLL 800V 51A 0.110Ω POWER MOS 7 R S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: PD - 9.1697 International IÖR Rectifier IRL3402 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V R ü S o n = 0 . 0 1 Í 2 Id = 8 5 A Description

82C51

Abstract: 82c51 pin 44
Contextual Info: OKI semiconductor MSM82C51A-2RS/GS/JS_ U N IV ER SA L SYNCHRONOUS ASYNCHRONOUS R E C E IV E R TR A N SM ITTER G E N E R A L DESCRIPTION The M SM 82 C 51A is a U S A R T Universal Synchronous Asynchronous Receiver Transm itter for serial data communication.

Contextual Info: I faSMIña? D0141E3 t, I MITSUBISHI ADVANCED SCHOTTKY TTL M74F151AP/FP/DP * ' sf 6> cl «O* a .ic^ 0* % £ * MITSUBISHI ÍC6TL LOGIC} 07E ¿ 8-LINE TO 1-LINE DATA SELECTOR/M ULTIPLEXER WITH STROBE DESCRIPTION PIN CONFIGURATION TOP VIEW , T h e M 7 4F 1 51A P is a sem iconductor in teg rated circuit

6v8a

Abstract: 67 6283 PFZ47 BZW06-5V8 BZW06-6V4 BZW06-7V0 BZW06-7V8 DTZ10 DTZ15 P6KE10A
Contextual Info: transient voltage suppressors «TRANSIL» diodes de p rotection «TRANSIL» THOMSON-CSF Types Unidirec­ tional 1,5 KW PFZ 6V8 PFZ 6V8 A PFZ 7V5 PFZ 7V5 A PFZ 8V2 PFZ 8V2 A PFZ 9V1 PFZ 9V1 A PFZ 10 PFZ 10 A PFZ 11 PFZ 11 A PFZ 12 PFZ 12 A PFZ 13 PFZ 13 A PFZ 15

Contextual Info: PD - 9.1697A International IQR Rectifier IRL3402 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V RüS on = 0.01 £2 lD = 85A Description These HEXFET Power MOSFETs were designed

APT50M75

Abstract: APT50M75JLL
Contextual Info: APT50M75JLL 500V POWER MOS 7 R MOSFET VDSS 27 2 T- D G SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS Symbol S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel

Contextual Info: APT50M75JLL 51A 0.075Ω 500V R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT50M75JFLL

Abstract: APT50M75
Contextual Info: APT50M75JFLL 500V POWER MOS 7 R 0.075Ω 51A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: TSP2950/TSP2951 150mA Ultra Low Dropout Positive Voltage Regulator SOP-8 TO-92 Pin Definition: 1. Output 2. Sense 3. Shutdown 4. Ground TO-252 Pin Definition: 1. Output 2. Ground 3. Input 8. Input 7. Feedback 6. Voltage tap 5. Error flag Pin Definition: 1. Input

Contextual Info: APT50M75JFLL 500V POWER MOS 7 R 0.075Ω 51A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT50M75JFLL

Contextual Info: APT50M75JFLL 500V POWER MOS 7 R 51A FREDFET 0.075Ω S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON