51A PF Search Results

JANSR2N7432U

Abstract: IRHNA3160 IRHNA4160 IRHNA7160 JANSF2N7432U JANSG2N7432U SMD 51A
Contextual Info: PD - 91396E IRHNA7160 JANSR2N7432U 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) 0.04Ω 0.04Ω ID QPL Part Number 51A 51A

LT1L51A

Abstract: LT1T51A
Contextual Info: Chip LED Devices LT 1D 51A L U D 51A Series Series Colored Diffusion Chip LED Devices • Model No. LT1L51A LT1T51A LT1P51A LT1D51A LT1S51A LT1H51A LT1E51A LT1K51A Red High-luminosity Red (High-luminosity) Red Red Sunsetorange Yellow Yellow-green Green GaAlAs/GaAs

Contextual Info: PD - 91396E IRHNA7160 JANSR2N7432U 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) 0.04Ω 0.04Ω ID QPL Part Number 51A 51A

Contextual Info: PD-91396F IRHNA7160 JANSR2N7432U 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) 0.04Ω 0.04Ω ID QPL Part Number 51A 51A JANSR2N7432U

Contextual Info: RCJ510N25 Nch 250V 51A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCX511N25 RCX511N25 Datasheet Nch 250V 51A Power MOSFET lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCX511N25 Datasheet Nch 250V 51A Power MOSFET lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.

RCX511N25

Contextual Info: RCX511N25 Nch 250V 51A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.

MPSW51

Abstract: MPSW51A 500IC
Contextual Info: MP$W51,A* M A X IM U M R A T IN G S Rating Symbol Value Unit Collector-Emitter Voltage MPSW51 M PSW 51A VCEO -3 0 -4 0 Vdc Collector-Base Voltage MPSW51 M PSW 51A VCBO -4 0 -5 0 Vdc Emitter-Base Voltage Ve b o -5.0 Vdc Collector Current — Continuous >C -1 0 0 0

82C51

Abstract: 82C51A
Contextual Info: OKI semiconductor MSM82C51A-2RS/GS/JS_ UNIVERSAL SYNCHRONOUS ASYNCHRONOUS R EC EIV ER TRANSMITTER G EN ERA L DESCRIPTION The M SM 82C 51A is a U S A R T Universal Synchronous Asynchronous Receiver Transm itter for serial data communication. A s a peripheral device of a microcomputer system , the M SM 82C 51A receives parallel data from the CPU

MPSW

Contextual Info: MPSW51,A* M A X IM U M RATINGS Rating Symbol C o lle c to r -E m itte r V o lta g e M PSW 51 v CEO M P S W 51A C o lle c to r-B a s e V o lta g e MPSW 51 VC B O M P S W 51A T/^ = 2 5 °C T o ta l D e v ic e D is s ip a tio n «' T q = -3 0 Vdc 25°C - 40

Contextual Info: AP9560GS-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance BVDSS D -40V RDS ON Simple Drive Requirement Fast Switching Characteristic 12.5m ID G -51A RoHS Compliant & Halogen-Free S Description

Contextual Info: AP9560GP-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance BVDSS D RDS ON Simple Drive Requirement Fast Switching Characteristic ID G -40V 12.5m -51A RoHS Compliant & Halogen-Free S Description

Contextual Info: AP0904GJB-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D BVDSS 40V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 10m 51A S Description

Contextual Info: AP0904GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance BVDSS D 40V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 10m 51A S Description

Contextual Info: MAXIMUM RATINGS Symbol Value Unit C o lle c to r - E m itte r V o lta g e Rating M PSW 51 M PSW 51A VcEO -3 0 -4 0 Vdc C o lle c to r - B a s e V o lta g e M PSW 51 M PSW 51A VcBO -4 0 Vdc -5 0 E m it t e r - B a s e V o lta g e VebO - 5 .0 Vdc C o lle c to r C u rr e n t — C o n tin u o u s

Contextual Info: APTM50DHM65TG Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 VDSS = 500V RDSon = 65mΩ typ @ Tj = 25°C ID = 51A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives G1 S1

Contextual Info: APTM50DHM65T3G VDSS = 500V RDSon = 65mΩ typ @ Tj = 25°C ID = 51A @ Tc = 25°C Asymmetrical - Bridge MOSFET Power Module 13 14 Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Q1 CR3 18 22 7 Features

Contextual Info: APTM50DHM65T Asymmetrical - Bridge MOSFET Power Module VDSS = 500V RDSon = 65mΩ Ω max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • • • Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features • • • • •

Contextual Info: UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V

UJ-845

Abstract: MOSFET Module transistor d 1556 APTM50DHM65T
Contextual Info: APTM50DHM65T Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 VDSS = 500V RDSon = 65mW max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • Welding converters · Switched Mode Power Supplies · Switched Reluctance Motor Drives G1 S1 OUT1 OUT2

Contextual Info: UniFET TM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V

51a marking

Abstract: FDP51N25 FDPF51N25
Contextual Info: UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V

APT0406

Abstract: APT0501 APT0502
Contextual Info: APTM50DHM65T3G VDSS = 500V RDSon = 65mΩ typ @ Tj = 25°C ID = 51A @ Tc = 25°C Asymmetrical - Bridge MOSFET Power Module 13 14 Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Q1 CR3 18 22 7 Features