51A MARKING Search Results

Contextual Info: RCJ510N25 Nch 250V 51A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCX511N25 RCX511N25 Datasheet Nch 250V 51A Power MOSFET lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCX511N25 Datasheet Nch 250V 51A Power MOSFET lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.

RCX511N25

Contextual Info: RCX511N25 Nch 250V 51A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.

Contextual Info: UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V

Contextual Info: UniFET TM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V

51A05

Abstract: 51a100
Contextual Info: Yuan Dean Scientific CO.,LTD 51A SERIES 16 PIN DUAL-IN-LINE TTL ACTIVE DELAY LINE FEATURES • 16-PIN PACKAGE. • 5EQUALLY-SPACED TAPS. • TTL SCHOTTKY INTERFACED. • TOTAL DELAYS FROM 25-1000nS. ELECTRICAL CHARACTERISTICS IIH Logic”1” Input Current

Contextual Info: Yuan Dean Scientific CO.,LTD 51A SERIES 16 PIN DUAL-IN-LINE TTL ACTIVE DELAY LINE FEATURES • • • • 16-PIN PACKAGE. 5EQUALLY-SPACED TAPS. TTL SCHOTTKY INTERFACED. TOTAL DELAYS FROM 25-1000nS. ELECTRICAL CHARACTERISTICS IIH Logic”1” Input Current

51a marking

Abstract: FDP51N25 FDPF51N25
Contextual Info: UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V

Contextual Info: 16 PIN DUAL-IN-LINE TTL ACTIVE DELAY LINE 51A SERIES FEATURES • • • • 16-PIN PACKAGE. 5EQUALLY-SPACED TAPS. TTL SCHOTTKY INTERFACED. TOTAL DELAYS FROM 25-1000nS. ELECTRICAL CHARACTERISTICS IIH Logic”1” Input Current IIL Logic”0” Input Current

51a marking

Abstract: FDP51N25
Contextual Info: UniFET TM FDP51N25 250V N-Channel MOSFET Features Description • 51A, 250V, RDS on = 0.060Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 55 nC)

Contextual Info: Advanced Power Electronics Corp. AP0904GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Low On-Resistance R DS ON Fast Switching Characteristics G RoHS-compliant, halogen-free 40V 10mΩ ID 51A S Description D (tab) G Advanced Power MOSFETs from APEC provide the designer with the best

pn2222

Abstract: pn2907 NSDU01 2N4125 TN2219 "device marking" BC213 BC214 MPSW01A MPSW51A
Contextual Info: VCEO smt (Volts) Min 30 Devices PNP Nf>N M PSW 01A M PSW 51A NSDU01 if t iiliilS l: ; . ' •" . • ••• fr@ l h f j O lc •c (m A) Max mA (MHz) NF Package P D(ftnfe) (<nW) Max Min 1000 50 1000 50 50 TO-226 1000 1000 60 100 50 50 T0-202(55) 1333 Min

51A MARKING CODE

Contextual Info: StrongIRFET IRFH7545PbF HEXFET Power MOSFET Application • Brushed Motor drive applications  BLDC Motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications

Contextual Info: LESHAN RADIO COMPANY, LTD. HFM101 – HFM106 1A 1A HIGH EFFICIENCY SMA DIODES TYPE Marking HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108 HF1 HF2 HF3 HF4 HF5 HF6 HF7 HF8 50 100 200 300 400 600 800 1000 V F V IF (A) VRRM(V) 1.00 1.00 1.00 1.30 1.30

Contextual Info: StrongIRFET IRFS7762PbF IRFSL7762PbF HEXFET Power MOSFET Application • Brushed motor drive applications  BLDC motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications

Contextual Info: LESHAN RADIO COMPANY, LTD. HFM101 – HFM108 1A 1A HIGH EFFICIENCY SMA DIODES TYPE Marking HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108 HF1 HF2 HF3 HF4 HF5 HF6 HF7 HF8 50 100 200 300 400 600 800 1000 V F V IF (A) VRRM(V) 1.00 1.00 1.00 1.30 1.30

1RLZ44

Abstract: 1RLZ44S 12v irlz44 AN-994 IRLZ44 IRLZ44S SMD-220 smd marking AJj a1494 L-179
Contextual Info: PD-9.559C International Rectifier IRLZ44 HEXFET Power MOSFET • Dynamic dv/dt Rating • Logic-Level Gate Drive V d ss- • FtDS on S p ecifie d a t V g s =4 V & 5V • • • • 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

AN-994

Abstract: mj 340
Contextual Info: PD - 95483A AUTOMOTIVE MOSFET Features O O O O O O O HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 60V

51A MARKING CODE

Abstract: gs 069 AN-994 IRL3402 IRL3402S
Contextual Info: PD - 91693A IRL3402S HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G Description ID = 85A† S These HEXFET Power MOSFETs were designed

AN-994

Abstract: IRL3402 IRL3402S
Contextual Info: PD - 91693A IRL3402S HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G Description ID = 85A† S These HEXFET Power MOSFETs were designed

Contextual Info: PD - 94724 IRF1010EZ AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 60V RDS on = 8.5mΩ

IRL3402

Contextual Info: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-179-97 IRL3402 HEXFET TO-220 PD - 9.1697 IRL3402 PRELIMINARY HEXFET Power MOSFET l l l l Advanced Process Technology

to262 pcb footprint

Abstract: 51a marking irf1010ezpbf MARKING 51A AN-994
Contextual Info: PD - 95483A AUTOMOTIVE MOSFET Features O O O O O O O HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 60V