512X9 Search Results

Contextual Info: 57C4501-50/65/80 a High Density First-in First-out FIFO 512x9 CMOS Memory Ol Advance Information •*1 DISTINCTIVE CHARACTERISTICS RAM based FIFO 512x9 organization Cycle times of 65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum

Contextual Info: IN T E G R A T E D DEVICE, böE D MÛ 25 77 1 G D 1 3 77 Ö b2D CMOS SyncFlFO 64X9, 256x9, 512x9, 1024 X 9, 2048 X 9 and 4096 x 9 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • • • • • • • • • 64 x 9-bit organization IDT72421

Z/tda 7281

Contextual Info: CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1024x9 IDT7280 IDT7281 IDT7282 PRELIMINARY INFORMATION FEATURES: • • • • • • • • • • • • The 7280 is equivalent to tw o 7200 256x9 FIFOs The 7281 is equivalent to tw o 7201 512x9 FIFOs

Contextual Info: PRELIMINARY muMHS DATA SHEET_ _ L March 1994 6 7 2 0 1 /L 6 7 2 0 2 512x9 & 1Kx 9 / 3 . 3 VOLTS CMOS PARALLEL FIFO FEATURES . . . . . . . FIRST-IN FIRST-OUT DUAL PORT MEMORY SINGLE SUPPLY 3.3 ±0.3 VOLTS 512 x 9 ORGANISATION L 67201 1024 x 9 ORGANISATION (L 67202)

Contextual Info: Advanced Micro Devices Am4601 Programmable-Flags, 512 x 9 FIFO DISTINCTIVE CHARACTERISTICS • 512x9 RAM-based FIFO ■ 25 and 35 ns access times ■ ■ Two fixed flags; full and empty Two programmable flags; programmable from 1 to 511 ■ ■ Programmable polarity for all four flags

t724

Abstract: 72221L12 811B
Contextual Info: CMOS SyncFlFO 6 4 X 9 , 256x9, 512x9, 1,024 X 9, 2,048 X 9, 4,096 x 9 and 8,192 x 9 I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • • • • • • • • • • • • • • • • • • • • 64 x 9-bit organization IDT72421

7C45

Abstract: MP 1008 es
Contextual Info: fax id: 5407 p v « *y 1 i. p X : CY7C451 CY7C453 CY7C454 - 512x9, 2Kx9, and 4Kx9 Cascadable Clocked FIFOs with Programmable Flags and write interfaces. Both FIFOs are 9 bits wide. The GY7G451 has a 512-word by 9-bit memory array, the CY7C453 has a 2048-word by 9-bit memory array, and the

Contextual Info: d a ta s h e e t_M 67201 A /M 6 7 2 0 2 A 512x9 & 1K x 9 CMOS PARALLEL FIFO FEATURES . • . ■ FIRST-IN FIRST-OUT DUAL PORT MEMORY 512 x 9 ORGANISATION M 67201 A 1024 x 9 ORGANISATION (M 67202A) FAST ACCESS TIME 20*, 25, 35, 45, 55 NS, COMMERCIAL,

Contextual Info: MT52C9005 512 x 9 FIFO MICRON FIFO 512x9 FIFO FEATURES • • • • • • • • • • • Very high speed: 1 5,20, 25 and 35ns access High-perform ance, low-power CM OS process Single +5V +10% supply Low power: 5mW typ. (standby ; 350mW typ. (active)

Contextual Info: european space agency agence spatiale européenne Pages 1 to 66 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC 512x9 BIT FIRST IN, FIRST OUT MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPE M67201FV ESA/SCC Detail Specification No. 9301/041

512X9

Contextual Info: S E M I C O N D U C T O R S PRELIMINARY MU9C0591, MU9C1902, MU9C2903, MU9C4904 512X9, 1KX9, 2KX9, AND 4K X 9 CMOS FIFOs! D DISTINCTIVE CHARACTERISTICS o High-speed First-in, First-out buffers o 20 ns Access time, 30 ns Cycle time 33 MHz) o 5 1 2 X 9 , 1 K X 9 , 2 K X 9 , and 4K X 9

Contextual Info: MI CR ON T E C H N O L O G Y INC 0 0 0 5 6 3 5 Tfl4 5SE » IMRN MT52C9005 883C 512 x S FIFO IC R O N S MILITARY FIFO 512x9 FIFO AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD (consult factory) • JAN (consult factoiy) • MIL-STD-883, Class B

MA7001

Abstract: l 0315
Contextual Info: MA7001 MA7001 Radiation Hard 512x9 Bit FIFO Replaces January 2000 version, DS3519-5.0 The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire process

n 18k U

Abstract: 132-QFP
Contextual Info: MEMORIES FIFO Memories T ype C a p a c ity Shallow Asynch. B it c o n fig u ra tio n Model No. O p e ra tin g fre q u e n c y MHz 25 64x8 LH5481 64x9 LH5491 35 0.5k A c c e s s tim e (n s ) 15 D eeper Asynch 20 25 35 50 LH5496 4.5k 512x9 9k 1k x 9 LH540202

Contextual Info: QS72211, QS72221 ADVANCE INFORMATION Q High-Speed CMOS 512x9,1K X 9 Parallel Clocked FIFO QS72211 QS72221 FEATURES • • • • 15-ns 66 MHz read/write cycle times Synchronous/asynchronous read and write TTL compatible input and output levels Low power with industry-standard pinouts

Contextual Info: 2048x 9-BitRFO- Radiation Hardened 7203ERP CMOS epi Parallel Cascadeable FIFO DATA INPUTS ‘ D O -0 8 For Space Applications Ü WRITE POINTER s . RAM ARRAY 512x9 1024x9 2040x9 K= READ POINTER UJ-L1I I,I THREE El's 7 2 0 3 ERP (RP for STATE BUFFERS RAD-PAK ) high speed

Contextual Info: V’hM w:&*f H Advanced Micro High Density First-In First-Out FIFO 512x9-Bit CMOS Memory Devices Am7201 DISTINCTIVE CHARACTERISTICS • Low power consumption • RAM based FIFO • 512x9 organization • Status flags - full, half-full, empty • Cycle times of 35/45/65/80/100 nanoseconds

SO56-2

Abstract: IDT7280 IDT7280L IDT7281 IDT7281L IDT7282 IDT7282L 7282
Contextual Info: IDT7280 IDT7281 IDT7282 CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1,024 x 9 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • • • • The 7280 is equivalent to two 7200 256x9 FIFOs The 7281 is equivalent to two 7201 512x9 FIFOs

Contextual Info: CMOS SyncFIFO 64X9, 256x9, 512x9, 1024 X 9, 2048 X 9 and 4096 x 9 FEATURES: • • • • • • • • • • • • • • • • • • 64 x 9-bit organization IDT72421 256 x 9-bit organization (IDT72201) 512 x 9-bit organization (IDT72211)

Contextual Info: bbE D INTEGRATED DEVICE • MÛES771 0D1251S 7*10 « I D T CMOS SyncFlFO 6 4 X 9 , 2 56 x9 , 512x9 , 1024 X 9, 2048 X 9 and 4096 x 9 Out FIFO memories with clocked read and write controls. The IDT72421/72201/72211/72221/72231/72241 have a 64, 256, 512, 1024, 2048, and 4096 x 9-bit memory array,

Contextual Info: TOSHIBA LOGIC/MEMORY MÔE D FEATURES IT O S E [ PIN CONFIGURATION •F irst-In F irst-O u t Buffer memory TC74AC9001P - 64 X 9 b it TC74AC9003P. 256X9 bit TC74AC9004P.512X9 bit •H igh Speed Operation Access Time tA = 25ns (TYP.) Flag

FIFO 512x9

Contextual Info: Deep First-In First-Out FIFO 5 1 2 x 9 C M O S Mem ory 67C4501 -2 5 /3 5 / 5 0 / 6 5 / 8 0 Ordering Inform ation Features • Ram-based FIFO • 512x9 organization • Cycle times of 35/45/65/80/100 nanoseconds • Asynchronous and simultaneous writes and reads

AM7203

Contextual Info: H Advanced Micro Devices Am7201 -25/35/50/65/80 C M O S First-In First Out FIFO 512x9-Bit Buffer DISTINCTIVE CHARACTERISTICS • RAM baaed FIFO • Statu* flag« - full, half-full, empty • 512x9 organization • Retransmit capability • Cycle tim e* of 35/45/65/80/100 nanoseconds

Contextual Info: Hm m electronic June 1992 M 67201 HI-REL DATA SHEET_ 512x9 CMOS PARALLEL FIFO FEATURES FIRST-IN FIRST-OUT DUAL PORT MEMORY . EMPTY, FULL AND HALF FLAGS IN SINGLE DEVICE MODE WIDE TEMPERATURE RANGE : - 55°C TO + 125°C . RETRANSMIT CAPABILITY . BI-DIRECTIONAL APPLICATIONS