512M 29 Search Results
512M 29 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 9512M0C30H | Amphenol Communications Solutions | XCede, High speed backplane connectors, 2-Pair, 6 Position, Right Wall. | |||
| 9512M0C20H | Amphenol Communications Solutions | XCede, High speed backplane connectors, 2-Pair, 6 Position, Right Wall. | |||
| 9512M0E20H | Amphenol Communications Solutions | XCede, High speed backplane connectors, 2-Pair, 8 Position, Right wall. | |||
| 9512M0J20H | Amphenol Communications Solutions | XCede, High speed backplane connectors, 2-Pair, 4 Position, Right Wall. | |||
| 9512M0J40H | Amphenol Communications Solutions | XCede, High speed backplane connectors, 2-Pair, 4 Position, Right Wall. |
512M 29 Price and Stock
Micron Technology Inc PC28F512M29EWHF- Bulk (Alt: PC28F512M29EWHF) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PC28F512M29EWHF | Bulk | 1,104 |
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Get Quote | ||||||
Micron Technology Inc PC28F512M29EWHE- Tape and Reel (Alt: PC28F512M29EWHE) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PC28F512M29EWHE | Tape & Reel | 18 Weeks | 2,000 |
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Get Quote | |||||
onsemi MPSA29Darlington Transistors BIPOLAR TRANSISTOR TO-92 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MPSA29 | 14,945 |
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onsemi MPSA29-D26ZDarlington Transistors NPN Transistor Darlington |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MPSA29-D26Z | 1,766 |
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onsemi MMPQ2907ABipolar Transistors - BJT PNP Gen Purpose Amp |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMPQ2907A | 404 |
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512M 29 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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AS4C32M16MD1Contextual Info: AS4C32M16MD1 512M 32M x16 bit Mobile DDR SDRAM Confidential (Rev. 2.0, Feb. /2014) LPDDR MEMORY 512M (32Mx16bit) Confidential 1 Mobile DDR SDRAM Rev. 2.0/February 2014 AS4C32M16MD1 512M (32M x16 bit) Mobile DDR SDRAM Confidential (Rev. 2.0, Feb. /2014) Revision History |
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as4c32m16md132mx16bit200mhz400mbps+2 | |
AS4C16M32MD1Contextual Info: AS4C16M32MD1 512M 16M x32 bit Mobile DDR SDRAM Confidential (Rev. 1.0, July. /2014) LPDDR MEMORY 512M (16Mx32bit) Mobile DDR SDRAM Revision History Revision No 1.0 Description Initial Release Date 2014/07/18 AS4C16M32MD1 512M (16M x32 bit) LP Mobile DDR SDRAM |
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as4c16m32md116mx32bit512mbit200mhz+1 | |
EDE5104AGSE
Abstract: EDE5104AGSE-4A-E EDE5104AGSE-5C-E EDE5104AGSE-6C-E EDE5104AGSE-6E-E EDE5108AGSE EDE5108AGSE-6C-E
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ede5104agseede5108agse60-ballm01e0107+6 | |
EDE5104AESK
Abstract: EDE5104AESK-4A-E EDE5104AESK-5C-E EDE5104AESK-6E-E EDE5108AESK EDE5108AESK-5C-E EDE5108AESK-6E-E
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ede5104aeskede5108aesk60-ballm01e0107+6 | |
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Contextual Info: DATA SHEET 512M bits DDR2 SDRAM EDE5104AESK 128M words x 4 bits EDE5108AESK (64M words × 8 bits) Description Features The EDE5104AESK is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108AESK is a 512M bits DDR2 SDRAM |
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ede5104aeskede5108aesk60-ballm01e0107+1 | |
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Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104AESK 128M words x 4 bits EDE5108AESK (64M words × 8 bits) Description Features The EDE5104AE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108AE is a 512M bits DDR2 SDRAM |
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ede5104aeskede5108aeskede5104aeede5108ae+3 | |
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Contextual Info: 200PIN DDR2 533 SO-DIMM 512MB With 64Mx8 CL4 JM533QSJ-512M Description Placement The JM533QSJ-512M is a 64M x 64bits DDR2-533 SO-DIMM. The JM533QSJ-512M consists of 8pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed |
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200pin512mb64mx8jm533qsj-512m+4 | |
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Contextual Info: 240PIN DDR2 800 Unbuffered DIMM 512MB With 64Mx8 CL5 JM800QLJ-512M Description Placement The JM800QLJ-512M is a 64M x 64bits DDR2-800 Unbuffered DIMM. The JM800QLJ-512M consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin |
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240pin512mb64mx8jm800qlj-512m+4 | |
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Contextual Info: 240PIN DDR2 533 Unbuffered DIMM 512MB With 64Mx8 CL4 JM533QLJ-512M Description Placement The JM533QLJ-512M is a 64M x 64bits DDR2-533 Unbuffered DIMM. The JM533QLJ-512M consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin |
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240pin512mb64mx8jm533qlj-512m+4 | |
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Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR-II SDRAM EDE5104GASA 128M words x 4 bits EDE5108GASA (64M words × 8 bits) Pin Configurations The EDE5104GA is a 512M bits DDR-II SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108GA is a 512M bits DDR-II SDRAM |
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ede5104gasaede5108gasaede5104gaede5108ga+3 | |
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Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 512MB With 64Mx8 CL5 JM667QLJ-512M Description Placement The JM667QLJ-512M is a 64M x 64bits DDR2-667 Unbuffered DIMM. The JM667QLJ-512M consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin |
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240pin512mb64mx8jm667qlj-512m+4 | |
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Contextual Info: 240PIN DDR2 800 Unbuffered DIMM 512MB With 64Mx8 CL5 JM800QLJ-512M Description Placement The JM800QLJ-512M is a 64M x 64bits DDR2-800 Unbuffered DIMM. The JM800QLJ-512M consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin |
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240pin512mb64mx8jm800qlj-512m+4 | |
EDD5104ABTA
Abstract: EDD5104ABTA-6B EDD5104ABTA-7A EDD5104ABTA-7B EDD5108ABTA
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edd5104abtaedd5108abtaedd5104abedd5108ab+5 | |
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Contextual Info: DATA SHEET 512M bits DDR2 SDRAM EDE5104ABSE 128M words x 4 bits EDE5108ABSE (64M words × 8 bits) EDE5116ABSE (32M words × 16 bits) Description Features The EDE5104AB is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108AB is a 512M bits DDR2 SDRAM |
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ede5104abseede5108abseede5116abseede5104ab+6 | |
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Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR SDRAM EDD5104AB 128M words x 4 bits EDD5108AB (64M words × 8 bits) Description Pin Configurations The EDD5104AB is a 512M bits Double Data Rate (DDR) SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDD5108AB is a 512M bits DDR |
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edd5104abedd5108abm01e0107e0237e10 | |
life cycle of sustainable product
Abstract: E5104
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ede5104gasaede5108gasaede5104gaede5108ga+5 | |
EDD5104ABTA
Abstract: EDD5104ABTA-6B EDD5104ABTA-7A EDD5104ABTA-7B EDD5108ABTA
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edd5104abtaedd5108abtaedd5104abedd5108ab+5 | |
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Contextual Info: 200PIN DDR2 667 SO-DIMM 512MB With 64Mx8 CL5 JM667QSJ-512M Description Placement The JM667QSJ-512M is a 64M x 64bits DDR2-667 SO-DIMM. The JM667QSJ-512M consists of 8pcs 64Mx8its DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit |
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200pin512mb64mx8jm667qsj-512m+4 | |
EDE5104ABSE
Abstract: EDE5104ABSE-4A-E EDE5104ABSE-5C-E EDE5108ABSE EDE5108ABSE-4A-E EDE5108ABSE-5C-E EDE5116ABSE
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ede5104abseede5108abseede5116abse64-ball+7 | |
EDE5104ABSE
Abstract: EDE5104ABSE-4A-E EDE5104ABSE-5C-E EDE5108ABSE EDE5108ABSE-4A-E EDE5108ABSE-5C-E EDE5116ABSE
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ede5104abseede5108abseede5116abse64-ball+7 | |
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Contextual Info: 200PIN DDR2 800 SO-DIMM 512MB With 64Mx8 CL5 JM800QSJ-512M Description Placement The JM800QSJ-512M is a 64M x 64bits DDR2-800 SO-DIMM. The JM800QSJ-512M consists of 8pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed |
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200pin512mb64mx8jm800qsj-512m+4 | |
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Contextual Info: 200PIN DDR2 667 SO-DIMM 512MB With 32Mx16 CL5 JM667QSM-512M Description Placement The JM667QSM-512M is a 64M x 64bits DDR2-667 SO-DIMM. The JM667QSM-512M consists of 8pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed |
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200pin512mb32mx16jm667qsm-512m+4 | |
EDE5104ABSE
Abstract: EDE5104ABSE-4A-E EDE5104ABSE-5C-E EDE5108ABSE EDE5108ABSE-4A-E EDE5108ABSE-5C-E EDE5116ABSE
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ede5104abseede5108abseede5116abse64-ball+7 | |
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Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR SDRAM EDD5104ABTA 128M words x 4 bits EDD5108ABTA (64M words × 8 bits) Description Pin Configurations The EDD5104AB is a 512M bits Double Data Rate (DDR) SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDD5108AB is a 512M bits DDR |
Original |
edd5104abtaedd5108abtaedd5104abedd5108ab+3 | |