5116 RAM Search Results

5116 RAM

Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
Contextual Info: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)

5116 ram

Abstract: HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70
Contextual Info: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature

WCs MARKING

Abstract: SMD MARKING code ASC SMD MARKING CODE RAC 5117400
Contextual Info: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation

5117405BJ-50

Contextual Info: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

SPT0305

Abstract: Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah
Contextual Info: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

Contextual Info: SIEMENS HYB 5116405BJ/BT -50/-60/-70 HYB 5117405BJ/BT -50/-60/-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO P re lim in a ry In fo rm a tio n m ax. 6 6 0 m W a ctive • 4 194 3 0 4 w o rd s by 4 -b it o rg a n iz a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re

Contextual Info: SIEMENS 1 M x 1 6 - B it D y n a m ic R A M H Y B 5 1 1 6 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 1 k & 4 k R e fre s h H Y B 5 1 1 8 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 H y p e r P a g e M o d e - E D O Prelim inary Inform ation max. 495 active mW ( HYB3116165BSJ-60)

Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).

5117405

Contextual Info: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature

Contextual Info: BCP 51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data • BVCEO > -45V, -60V & -80V   IC = -1A High Continuous Collector Current   ICM = -2A Peak Pulse Current   2W Power Dissipation Low Saturation Voltage VCE sat < -500mV @ -0.5A

NVR2

Abstract: pd446
Contextual Info: GREENWICH 2K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • NVR2 Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Program RAM No limit to number of programming cycles Fits standard 24-pin socket

gr281

Abstract: static ram 4802 pd446 4016 RAM
Contextual Info: GREENWICH INSTRUMENTS USA • Plug-in replacement for Static RAM • 10 years data retention • No erasure required • Fast power down • Functions as Data or Program RAM • No limit to number of programming cycles • Standard 24-pin JEDEC pinout GR281 is 2 kilobyte of non-volatile memory which is pin-compatible

Contextual Info: RPR 2K x 8 NON-VOLATILE RAM MsmumnsusA • • • • • • • • • GR281 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM

Contextual Info: apR FAST ACCESS - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout

gr281

Abstract: GR281, 2K x 8
Contextual Info: 2 K x 8 GR 281 NON VOLATILE RAM WSTRUMENTS ITO * Plug-in replacement for Static R A M * 10 years data retention * No erasure required * Fast power down * Functions as Data or Program R A M * No lim it to number of programming cycles * Standard 24-pin JEDEC pinout

LH5116H

Contextual Info: LH5116/H C M O S 16K 2 K x 8 S tatic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized a s 2 ,0 4 8 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

ba 4916

Abstract: transistor e616 ic rom 2816 4E16 7D16 transistor d716 4C16 HP 4716 Ic 6116 pin configuration details transistor A916
Contextual Info: MITSUBISHI MICROCOMPUTERS M35054-XXXFP/M35055-XXXFP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • Screen composition . 24 characters ✕ 10 lines, • • • • • • • • • • • • •

Contextual Info: STI328100D1 -xxVG 72-PIN SO-DIMMS 8M X 32 DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI328100D1 is a 8M x 32 bits Dynamic RAM high density memory module. The Simple Technology STI328100D1 consist of four CMOS 8M x 8 bits DRAMs in 34pin TSOP package mounted on a 72-pin glass epoxy substrate.

ba 4916

Abstract: 6A16 ic rom 2816 2316 rom ma 6116 f6 HP 4716 ss 6616 9316 ROM EA 7316 c516
Contextual Info: MITSUBISHI MICROCOMPUTERS M35054-XXXFP/M35055-XXXFP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION PIN CONFIGURATION TOP VIEW CP1 TESTA CS SCK SIN AC • Screen composition . 24 characters ✕ 10 lines, • •

Contextual Info: SEC NEC Electronics Inc. MC-424256A36BH/FH 262,144 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-424256A36BH/FH is a fast-page dynamic RAM module organized as 262,144 words by 36 bits and designed to operate from a single + 5-volt power sup­

KBR-480B13

Abstract: m1104
Contextual Info: TO SH IB A TMP47C451B CM OS 4-Bit M icrocontroller TMP47C451BN The TMP47C451B is a high performance 4-bit single chip microcomputer based on the TLCS-47 CM OS series w ith a DTMF generator and a large-capacity RAM for repertory dialing applications, and which is highly

TC5116100

Contextual Info: TOSHIBA TC5116100J/Z/FT-60/70 16,777,216 WORD X 1 BIT DYNAMIC RAM DESCRIPTION The TC5116100J/Z/FT is the new generation dynamic RAM organized 16,777,216 word by 1 bit. The TC5116100J/Z/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

ss 6616

Abstract: 9316 ROM transistor A916 IC B316 transistor d716 b816 BA 8A16 8316 rOM transistor B616 b716 transistor
Contextual Info: MITSUBISHI MICROCOMPUTERS M35053-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • • • • • • • • • • • • • • • • • • APPLICATION TV, VCR, Movie REV.1.1 CP1 ← TESTA CS SCK SIN AC → → ↔

Contextual Info: O K I Semiconductor MSM5 1 16400_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCRIPTIO N The M SM 5116400 is a new generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology used to fabricate the M SM 5116400 is O K I's C M O S silicon gate process technology.