50W LF AMPLIFIER Search Results

50w LF amplifier

Abstract: 2SB816 2SD1046
Contextual Info: Inchange Semiconductor Product Specification 2SB816 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1046 ・Wide area of safe operation APPLICATIONS ・For LF Power Amplifier, 50W Output Large Power Switching Applications

2SB816

Abstract: 2SD1046
Contextual Info: SavantIC Semiconductor Product Specification 2SB816 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1046 ·Wide area of safe operation APPLICATIONS ·For LF Power Amplifier, 50W Output Large Power Switching Applications

2SD1046

Abstract: 2SB816 50w LF amplifier
Contextual Info: SavantIC Semiconductor Product Specification 2SD1046 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3PN package ·Complement to type 2SB816 ·Wide area of safe operation APPLICATIONS ·For LF power amplifier, 50W output large power switching applications

2SB816

Abstract: 2SD1046
Contextual Info: JMnic Product Specification 2SB816 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1046 ・Wide area of safe operation APPLICATIONS ・For LF Power Amplifier, 50W Output Large Power Switching Applications PINNING PIN

2SB816

Abstract: 2SD1046
Contextual Info: Ordering number:677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Applications Features Package Dimensions • Capable of being mounted easily because of onepoint fixing type plastic molded package Interchangeable with TO-3 .

2SB816

Abstract: 2SD1046 ITR08405 ITR08404
Contextual Info: Ordering number:ENN677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Applications Package Dimensions unit:mm 2022A [2SB816/2SD1046] 15.6 14.0 3.2 4.8 3.5 2.0 1.3 1.2 15.0 20.0 • Capable of being mounted easily because of onepoint fixing type plastic molded package Interchangeable with TO-3 .

2SB816

Abstract: 2SD1046 ITR08404 ITR08405
Contextual Info: Ordering number:ENN677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Applications Package Dimensions unit:mm 2022A [2SB816/2SD1046] 15.6 14.0 3.2 4.8 3.5 2.0 1.3 1.2 15.0 20.0 • Capable of being mounted easily because of onepoint fixing type plastic molded package Interchangeable with TO-3 .

Contextual Info: 2SK2809-01MR FU JI N-channel MOS-FET Series F A P -IIIB 60V 0 ,0 1 Q 50 A 50W > Features - High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier DC-DC converters

50w LF amplifier

Abstract: audio amplifier 50w 50v 24v Audio amplifier class d BTL audio 50W 24v Audio amplifier class d single supply single supply 50w transistor mono audio amplifier MP7782DF class d Audio amplifier 24v MP7782 50W mono
Contextual Info: TM MP7782 50W Class D Mono Bridged Audio Amplifier The Future of Analog IC Technology TM DESCRIPTION FEATURES The MP7782 is a mono, 50W Class D Audio Amplifier. It is one of MPS’ second generation fully integrated audio amplifiers which dramatically reduces solution size by integrating

MP7782DF

Abstract: BTL audio 50W 50w LF amplifier audio amplifier 50w 50v audio power amplifier mosfet MP7782 24v Audio amplifier class d single supply TSSOP EV7782DF-00A MBRS130LTR
Contextual Info: TM MP7782 50W Class D Mono Bridged Audio Amplifier The Future of Analog IC Technology TM DESCRIPTION FEATURES The MP7782 is a mono, 50W Class D Audio Amplifier. It is one of MPS’ second generation fully integrated audio amplifiers which dramatically reduces solution size by integrating

EV7782DF-00A

Abstract: MP7782DF ,24v Audio amplifier class d 50w LF amplifier MP7782 class d Audio amplifier 24v power supply 50w 24v
Contextual Info: TM MP7782 50W Class D Mono Bridged Audio Amplifier The Future of Analog IC Technology TM DESCRIPTION FEATURES The MP7782 is a mono, 50W Class D Audio Amplifier. It is one of MPS’ second generation fully integrated audio amplifiers which dramatically reduces solution size by integrating

n fet 60v 50a

Abstract: 4441 mosfet 4441 equivalent
Contextual Info: F U JI 2SK2809-01 MR N -c h a n n e l M O S -F E T tM L lM E l/U G ilK F A P -IIIB S e r ie s 60 V 0 ,0 1 Q 50A 50W > Features - High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier

tc325

Contextual Info: F U JI i=ru=@GinjeuÈ 2SJ475-01 P-channel MOS-FET -60V 0,06Q 25A 50W FAP-III Series > Features - > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier

50w LF amplifier

Contextual Info: Application Note GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control Rev 0 RELEVANT PRODUCTS • AWT6146 GENERAL DESCRIPTION INTRODUCTION The application circuit below shows the relative ease with which this amplifier can be designed into a GSM

Contextual Info: SEPTEMBER 1995 PRELIMINARY INFORMATION D.S. 3968 1.5 KESRX01 290 – 460MHz ASK RECEIVER IFDC1 IFDC2 IF2 1 IF1 VCC 4 2 3 MIXIP 5 6 RFOP 7 VEERF 8 RFIN KESRX01 The KESRX01 is a single chip ASK Amplitude Shift Key Receiver IC. It is designed to operate in a variety of low power

ERICSSON 10031

Abstract: G200
Contextual Info: PTF 10031 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization ensure

ERICSSON 10031

Abstract: G200
Contextual Info: GOLDMOS PTF 10031 Field Effect Transistor 50 Watts, 1.0 GHz Description The PTF 10031 is a 50–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. This device operates at 55% efficiency with 13 dB gain. Nitride surface passivation and full gold

Contextual Info: FU JI 2SK2518-01MR N-channel MOS-FET FAP-IIA Series 200V > Features - 0 ,1 3 Q 20A > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof TO-220F15 4.5 2.7 > Applications

RS1612C

Abstract: J4658 1612C
Contextual Info: Issued November 1984 J4658 RF/IF amplifier ic RS1612C Stocknumber 303-208 A versatile R.F./I.F. amplifier i.c. in an 8 pin D.I.L. plastic package. Featuring low power comsumption, 15MHz bandwidth, high voltage gain and 70dB AGC range. Absolute maximum ratings

MX 128 D

Abstract: 13952 TRANSMITTER PIN-20 IC DIAGRAM
Contextual Info: Temic U2763B S e m i c o n d u c t o r s 900-MHz ISM Band Transmitter Description is available which fits perfectly with AMD’s PhoX con­ trollers AM79C432A and AM79C433. The transmitter IC U2763B is specifically designed for cordless telephone applications in the 900-MHz ISM

24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Abstract: 4X50W bash audio amplifier circuit diagram bash 200 watt amplifier 24v 200W AUDIO stereo AMPLIFIER CIRCUIT DIAGRAM 200w transistor audio amplifier circuit diagram power transistor audio amplifier 500 watts circuit diagram 50 watt amplifier 6.1 circuit diagram power transistor audio amplifier 500 watts 2x50W
Contextual Info: STA530 4 X 50W STEREO POWER AMPLIFIER TARGET SPECIFICATION • ■ ■ ■ ■ ■ ■ ■ ■ MONOCHIP BRIDGE QUAD CONFIGURABLE AMPLIFIER OPTIMIZED FOR BASH ARCHITECTURE 4 X 50W OUTPUT POWER @ RL = 8 Ω, THD = 10% or 2 x 50W @ 8 Ω + 1 x 100W @ 4Ω or (2 x 100W @ 4 Ω)

24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Abstract: 50 watt amplifier 6.1 circuit diagram 4x50W power transistor audio amplifier 500 watts circuit diagram 100w transistor audio amplifier circuit diagram stereo amplifier 100W 24v bash audio amplifier circuit diagram 2x50W power transistor audio amplifier 100w 50w audio amplifier diagram
Contextual Info: STA530 4 X 50W STEREO • ■ ■ ■ ■ ■ ■ ■ ■ MONOCHIP BRIDGE QUAD CONFIGURABLE AMPLIFIER OPTIMIZED FOR BASH ARCHITECTURE 4 X 50W OUTPUT POWER @ RL = 8 Ω, THD = 10% or 2 x 50W @ 8 Ω + 1 x 100W @ 4Ω or (2 x 100W @ 4 Ω) PRECISION RECTIFIERS TO DRIVE THE

2N404 transistor

Abstract: 80w hf audio power amplifier 2N705 2N336A 2G371 2G381 ZTX302 2G224 transistor t05 2N706
Contextual Info: 56 T r a n s is t o r s Type Notes <1 M inim um value 2) Average value (3) M ax. unilateralized pow er gain (4) M ax. frequency of oscillation W ith heat sink Ptot: M ax. total dissipation in free air at 2 5 °C am bient temp. Vet,«: M ax. collector-to base voltage, em itter

Contextual Info: POWER SPLITTERS/COMBINERS 2 WAY-90° 50Ω 380 MHz to 1460 MHz HPQ u MODEL NO. FREQ. RANGE MHz fL-fU ISOLATION dB Typ. INSERTION LOSS, dB Avg. of Coupled Outputs less 3 dB Min. Typ. PHASE AMPLITUDE UNBALANCE UNBALANCE Degrees dB Max. Typ. Max. Typ. VSWR :1