P-Channel 60V -50A Power MOSFET with RDSon typ 25mΩ at VGS -10V produced using advanced TRENCH technology for low onresistance fast switching and high energy pulse handling in avalanche and commutation modes
P-Channel MOSFET with -60V drain-source voltage, -50A continuous drain current, 25mΩ typical RDS(on) at -10V gate voltage, advanced trench technology for low on-resistance and high cell density, suitable for power management and battery-powered systems.
P-Channel Power MOSFET with -60V drain-source voltage, -50A continuous drain current, 25mΩ typical RDS(on) at -10V gate-source voltage, available in TO-252-2L package.