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50N035
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|
Bay Linear
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N-Channel Field Effect Transistor |
Original |
PDF
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33.6KB |
2 |
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50N035S
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|
Bay Linear
|
30V 52A N-channel field effect transistor |
Original |
PDF
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33.6KB |
2 |
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50N035T
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|
Bay Linear
|
30V 52A N-channel field effect transistor |
Original |
PDF
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33.6KB |
2 |
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50N05
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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29.7KB |
1 |
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50N05
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
|
29.7KB |
1 |
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50N05L
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|
Unknown
|
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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29.7KB |
1 |
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50N05L
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|
Unknown
|
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
|
29.7KB |
1 |
|
50N06
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Unisonic Technologies
|
50 Amps, 60 Volts N-CHANNEL POWER MOSFET |
Original |
PDF
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145.71KB |
8 |
|
50N06
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|
Unknown
|
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
|
29.7KB |
1 |
|
50N06
|
|
Unknown
|
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
|
29.7KB |
1 |
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50N06LE
|
|
Unknown
|
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
|
29.7KB |
1 |
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50N06LE
|
|
Unknown
|
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
|
29.7KB |
1 |
|
50N06L-X-TA3-T
|
|
Unisonic Technologies
|
50 Amps, 60 Volts N-CHANNEL POWER MOSFET |
Original |
PDF
|
145.7KB |
8 |
|
50N06-TA3-T
|
|
Unisonic Technologies
|
50 Amps, 60 Volts N-CHANNEL POWER MOSFET |
Original |
PDF
|
145.7KB |
8 |
|
|
|
50N06-TF3-T
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|
Unisonic Technologies
|
50 Amps, 60 Volts N-CHANNEL POWER MOSFET |
Original |
PDF
|
145.7KB |
8 |
HSBA50N06
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|
Huashuo Semiconductor
|
N-channel 60V MOSFET with 50A continuous drain current, 12mΩ typical RDS(ON), low gate charge, and high cell density trench technology for fast switching applications. |
Original |
PDF
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|
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AK50N03K
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AK Semiconductor
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AK50N03K N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 50A continuous drain current, RDS(ON) less than 8mΩ at VGS=10V, advanced trench technology for low on-resistance and high switching performance. |
Original |
PDF
|
|
|
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HSP150N02
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|
Huashuo Semiconductor
|
N-Ch 150V trench MOSFET with 12 mOhm RDS(on), 120A continuous drain current, 300W power dissipation, and fast switching for high-efficiency power applications. |
Original |
PDF
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|
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SLB150N06G
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Maplesemi
|
60V N-Channel MOSFET with 150A continuous drain current, 2.4mΩ typical RDS(on) at VGS = 10V, TO-263 package, suitable for high-efficiency switching in low-voltage power applications. |
Original |
PDF
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|
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SLM50N06T
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Maplesemi
|
60V N-Channel MOSFET with 50A continuous drain current, 14.8mΩ typical RDS(on) at VGS = 10V, low gate charge of 27.2nC, and 100% avalanche tested for high ruggedness and fast switching performance. |
Original |
PDF
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HSBA50N06
