50IHA Search Results

RPR-363A

Contextual Info: Page 1 of 5 Pri Specification M 1 . Part number Type R P R - 3 6 3 A ed o ft e ic a l switch R P R -3 6 3 A 2 . Construction GaAs Infrared Light Em itter,Silicon Planar Type Phototransistor 3 . Aplication All kinds of contoroller 4 . Dimension Fig-1 5 . Absolute Max Ratings

Contextual Info: - fe /Ë • a II • M I 3 O 1 H » : ^ « a í t a ^ o i s s d r IB E # @ S S íí, í 'l l o m f f î i S M î i X ' t -, f- y *- pin K E9. • Ml 3 0 3 t o : # w y ÿ'fflo (p in y 4 % — k ) EM • Ml 3 0 8 : S a ® 1 8 8 l® a i$ fflT (PIN •M I 4 O 2

NJU7285

Abstract: RE82 Y202
Contextual Info: / v -T'J —r\ v V T V ZftJ] / t ^ l / T " - V [s^n. b — •% g NJU7285->'J-rii, ¿\*;f'J-n‘ ^7';7‘ vXfifflC-MOS IC T , 2&UE U it , §■ £ B ft ÎÎÎ u r i M ì b *$>\* ; ^ r « s c : asy, L - C fó y ^ fo NJU7285XV £ SI< 0 3 :*> ± *< y L Tf c y ,

2SC4271

Contextual Info: Ordering num ber: EN 2710A I _2 S C 4 2 7 1 NO.2710A NPN Epitaxial Planar Silicon Transistor High-Defmition CRT Display Video Output Driver Applications Applications . Wide-band amplifiers . High frequency drivers Features . High f^, fT=2.2GHz typ

Contextual Info: MSE T> m T0T72S0 0D177b3 2 « T O S M TOSHIBA TRANSISTOR 2N4401 SILICON NPN EPITAXIAL TYPE PCT PROCESS T - ^ i -7 3 TOSHIBA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FE A T U R E S: . Low Leakage Current : Iç£v=100nA(Max.)* lBEV=-100nA(Max.)

SD1616A

Abstract: 1616A KSD1616 KSD1616A
Contextual Info: FOI KSD 1616/1616A NPN E pitaxial Silicon Transistors Semiconductor AUDIO F R E Q U E N C Y POW ER AM PLIFIER M EDIUM S P E E D SW ITCHING • T O -9 2 Complement to KSD1616/1616A ABSOLUTE MAXIMUM RATINGS (Ta = 2 5 T: > C h a r a c te r is tic Collector-base Voltage :KSD1616