50G A Search Results

finisar 100g

Abstract: 100CL FINF050-100CLA1 FINF050-100CLA2 FINF050-100CLB1 FINF050-100CLB2
Contextual Info: Finisar 50GHz Interleaver Features: ● Wide passband and low dispersion ● Passively athermalized ● High isolation and low insertion loss ● Fully qualified to Telcordia 1209/1221 The Finisar 50G Interleaver efficiently demultiplexes or multiplexes 50G

50g a

Abstract: LELON electrolytic capacitor
Contextual Info: SMD Aluminum Electrolytic Capacitors Anti-vibration Structure for SMD Type Available for SMDφ12.5 ~ φ16 in VLV and VLW series Suitable for Automotive Application Peak acceleration: 50G Specifications Peak acceleration: 50G Peak to peak amplitude: 1.5mm Frequency: 10 to 2,000 Hz reciprocation for 20 minutes

mosfet 50g

Abstract: PowerPAK
Contextual Info: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Low-Side Switch for DC/DC Converters

Contextual Info: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Low-Side Switch for DC/DC Converters

SiR890DP

Contextual Info: New Product SiR890DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 50g 0.0040 at VGS = 4.5 V 50g VDS (V) 20 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters

semikron SKS

Abstract: 50G K SEMISTACK - Thyristor w1c semikron
Contextual Info: SEMISTACK - Thyristor Circuit Irms Vrms min - (max) Types W1C W1C 25 50 90 - 277 90 - 277 SKS 25G 2xW1C 6 V6 SKS 50G W1C 6 V6 Symbol Conditions SEMITOP Stack 1) Single phase controller SKS 25G 2xW1C 6 V6 SKS 50G W1C 6 V6 SK 70 KQ or SK 100 KQ P49/63G Target Data

SMD CAPACITORS color code

Abstract: SMD MARKING CODE 680
Contextual Info: SMD Aluminum Electrolytic Capacitors VLW Features ‧ 12.5 ~ 16φ, 125℃, 2,000 hours assured ‧ Suitable for automotive application ‧ Peak acceleration: 50G ‧ RoHS Compliance Marking color: Black SPECIFICATIONS Items Category Temperature Range Capacitance Tolerance

1206F

Abstract: IEC62
Contextual Info: High Value Surface Mounted Resistors Welwyn Components HR Series • Custom designs / sizes available • Resistance range to 50G ohms • Terminations available for wire bonding or soldering • Low voltage coefficient of resistance Electrical Data Power Rating

Contextual Info: HVC Series Stackpole Electronics, Inc. High Voltage Thick Film Chip Resistors • • • • • • • • • • • • Features: Resistive Product Solutions Absolute voltage ratings up to 25,000 volts Ohmic values to 50G Available with wire bondable terminations

Contextual Info: High Value Surface Mounted Resistors Welwyn Components HR Series • Custom designs / sizes available • Resistance range to 50G ohms • Terminations available for wire bonding or soldering • Low voltage coefficient of resistance Electrical Data Power Rating

RLT1060-50G

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1060-50G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Structure: QW structure Lasing wavelength: 1060 nm typ.

Contextual Info: DC4151F01 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.50G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A

Contextual Info: ML4971 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power60m Frequency Min. (Hz)50G Frequency Max. (Hz)60G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage4.5 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: MA49193-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power75m Frequency Min. (Hz)40G Frequency Max. (Hz)50G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage4.5 I(Oper.) Typ.(A) Oper. Current1.4 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: P e r fo r m a n c e Level N b of C o n t a c t s PL3 PL2 54 Part N u m b e r Part N u m b e r Part N u m b e r D im e n sio n s m m Insulator C olor A Max C D E OG 0 9 1 8 50G 7 9 0 2 0 9 1 8 50G 6 9 0 2 0918 506 5902 27 ,2 22,86 12,45 2,54 x 2 = 10 0918 510 7902

Rotation position Sensor

Abstract: HALL 276 276 hall sensor
Contextual Info: www.hamlin.com 55085 Mini Vane Hall Effect Sensor Features and Benefits Features Benefits Applications • Sensor and magnet contained in a single housing • Sensor operates when ferrous vane passes through slot • 3 pin leadout integral to sensor • Vibration 50g max. @ 50-2,000Hz

Contextual Info: F-204 HSEC8-130-01-S -D -E M 2 ,80Um l-S SPECIFICATIONS For complete specifications see www.samtec.com?FISEC8-EM Insulator Material: Liquid Crystal Polymer Contact: BeCu Current Rating: Testing Now! Operating Temp: -65°C to +125°C Plating: Au over 50g" 1,27pm Ni

HVC1206

Abstract: HVC3512
Contextual Info: HVC Series Stackpole Electronics, Inc. High Voltage Thick Film Chip Resistor Features: • • • • • • • • • • • • • Resistive Product Solutions Absolute voltage ratings up to 40,000 volts Ohmic values to 50G Available with wire bondable terminations

Contextual Info: DC4141F02 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.50G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A

Contextual Info: MA49182-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power50m Frequency Min. (Hz)50G Frequency Max. (Hz)60G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage2.5 I(Oper.) Typ.(A) Oper. Current1.5 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

KBPC40

Abstract: KBPC50 working of single phase bridge rectifier
Contextual Info: KBPC40, 50G/W SERIES W TE PO WE R SEM IC O ND UC TO R S 40, 50A GLASS PASSIVATED BRIDGE RECTIFIER Features ! Glass Passivated Die Construction A ! ! ! Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for Maximum Heat Dissipation

Contextual Info: am O rganic Protection HIGH VALUE SURFACE MOUNT RESISTOR HR Tin/lead Solder SERIES* • 100M ohms to 50G ohms • Low voltage coefficient of resistance Thick Film Conductor Nickel •Manufactured in the U.K. by W elw yn Com ponents Ltd. a T T Group Com pany

GFB0412SHE

Abstract: GFB0412XE H 1061
Contextual Info: GFB 40 x 50 x 38 MM SERIES DIMENSIONS DRAWING UNIT: * Bearing Type Ball Bearings * Material Impeller & Frame : Plastic UL 94V-0 * Lead Wires : UL 1061 AWG #24 OR Equivalent Red Wire Positive(+) Black Wire Negative(-) * Weight : 50g (1.766 OZ) MOUNTING PANEL CUTOUT

Contextual Info: HVC Series High Voltage Chip Resistors FEATURES SPECIFICATIONS • High voltage up to 3,000 volts • Industry standard sizes • Working temperature range –55°C to 150° C • Designed for automatic insertion Resistance Range: Up to 50GΩ Resistance Tolerance: ±1%, 2%,