50HZIE3 Search Results

Contextual Info: 1 m ~ 5 5 — r 125 + 125 Tj V rm A»SP,?Ë^Œ ^ '0 M L - Î A/SÜ-^ - v iË iÊ S : ;< Is Z $ b 0.5 ms.duty 1/4 âiüÎJi&ÿîE Io 50Hz]E&&MÌJ ì P M , 7 ê = * 1C •tir/v S rt- v J IlÊ il Ifsm 50HzIE3ô £ . ^ !) i l L l-^-f ? ^-rA H !a,Tj-25=C r r

M2FH3

Contextual Info: s /3 '.v h + - a " u y y- Schottky Barrier Diode Single Diode Surface Mount M2FH3 30V 6A > /J'§kSM D > H ffiV F= 0 .3 6 V ID C /D C nyjK-2 nvny RATINGS Absolute Maximum Ratings isÊ » & ^i|rêa E -f- a Storage Temperature Operating Junction Temperature

Contextual Info: S I G 0 3 2 i a (tiro a ) • - i & m m t ? * f * - K _ : Outline Drawings GENERAL-USE RECTIFIER DIODE : Features • Diffused-junction • H /± High voltage capability # 7 'y ! i7 > 'vxliB fisB iE • Excellent avaranche characteristics

F10LC40

Contextual Info: Super Fast Recovery Diode vom . Twin Diode • W B tfä E I SF10LC40 OUTLINE DIMENSIONS Case : FTO-22 fì2l ! 4 0 0 V 10 A Date code Æ g Type No. F10LC40 • trr5 0 n s 1.2ig;? £ •«8W Œ 2K V & SE m D(D •S R ® g •Z 7 U —ïtî-TJl/ mmm. o a . a r a

Contextual Info: SQ.I.P.SS Square In-line Package Bridge Diode _ • O U T L IN E D IM E N S IO N S S15VBQ 600V 15A Unit • mm Weight : 16.7g ■ R A T IN G S Absolute Maximum Ratings ri f xm A, /ft |S y m b o l C?■o n d.T itio n * n Ite m -tt A sM S iM B :

EM X100 M6

Abstract: diode U1J SIN03 SIN03-30 SIIM03 78310 SK 350A
Contextual Info: S IN 0 3 3 5 o a m ± ' < T7 - 9 4 * - Y : Outline Drawings GENERAL-USE RECTIFIER DIODE • ¡ N f f i : F e a tu re s • •k&HSi&'S- Diffused junction • fln/±8cM#Ji£ Compression contact type : Applications im M M • Battery chargers Brush-less generators

MGE 1500 rt

Abstract: Diode GFT a9ay
Contextual Info: ERR 1 5 18ooa /£ : Outline Drawings GENERAL-USE RECTIFIER DIODE : Features • D iffu s e d -ju n c tio n • Flat p a ckag e typ e : Applications • ' f t ^ , E l e c t r i c • $ rS iE !5 g y |tS railw a y a n d c h e m ic a l use re ctifie rs V e h ic le use re c tifie rs

Contextual Info: P — K U type Super Fast Recovery Diode Surface Mounting Device O U T L IN E D IM E N S IO N S DE5LC20U 2 0 0 V 5A • R A TIN G S Îê & f ü ^ /ü fê m Absolute Maximum Ratings m *{fc Tstg -5 5 -1 5 0 ”C Tj 150 °C V rm 200 V 5 A 50 A Symbol S to ra g e Tem perature

S25SC6M

Contextual Info: vom sr-r*—K J V J -F Schottky Barrier Diode Twin Diode • O U T L IN E D IM E N S IO N S S25SC6M 60V 25A ■ fctëm R A T IN G S Absolute Maximum Ratings ~ ~ If s bE ^ S to ra g e Tem perature o i i l - — Conditions f it Unit 60 V 65 V 25 A 300 A V rm

WJ 73

Contextual Info: SILIC O N F A S T R E C O V E R Y R E C T IF Y IN G D IO D E S :>jfE 151 = ORIGIN • it* I. ELECTRIC 7 7 h CO SflE LTD — >\s$ -f I. -y •?■ 2 . f a 7 / ' — i f ¿f <75SJIO/iiCiS&#39;Jiuffl o ~ 400V _r — 2 ' f Z f T - S ' f X t f 'J r t e '- 'o 2. •

DA-6NC

Abstract: DA-6PC RELAY 8P DA-4P sria 0 DA-3N DA8P
Contextual Info: S IL IC O N D IO D E -A R R A Y S ¥ 4 * — D A > IJ — VTU'í O R I G I N E L E C T R I C CO L T D i. ' J ' ï l mmn-rzfrmmwrnz'^z < t-#2. 100mA 0 3 . è %. •# * 5ÖE T> • fflàè I . iS'(WaS5^f5i75[s]S&Îfifflo 2 . * (DitbiS&x -y^ V i/f S 0 • 3 È » (Ta = 25'C )

Contextual Info: Brido Dkxte • Surface Mounting Device ■ ^ = O U TL IN E DIM ENSIONS vk&mm S1NBD C la s s ' + 600V 1A \ \ \ \ / \ Wr + / 1 ® 1.3=0.15 3 -r -t! \ - Ö \S1NB / 60 94 ■". P v H d 3 ffll) D ate code -1 1 .3 .0 . L jj « © 1.3—O.IS 6.8=02 Ç0.8 Lo— a ia

Contextual Info: Twin Diode Diode Module O U T L IN E D IM E N S IO N S D30VCD 600V 30A • Ë te ft RATING S Absolute Maximum Ratings IS s Item « » a * Storag» Temperatur« Operating Junction Temperature -ö-AäSiS'SfE Maximum Reverse Voltage a * « * Average R ectified Forward Current

CGJ-1

Abstract: EGP14-08 s4hw EGP14 X103 FF 300 R 12 KS 4 thyristor CGJ1 EGP1408
Contextual Info: EGP14 700A ± * M ') X 9 Outline draw ings GENERAL-USE THYRISTOR • * * : F e a tu re s • T S if llia Flat package type • Large di/dt • Large dv/dt ■ffijis : Applications •i — Mot or control applications ftJIW • b— Heater control applications

ERD51

Abstract: SID01 asj-111
Contextual Info: ERD51 ,SID01 9 a> : Outline Drawings GENERAL-USE RECTIFIER DIODE > Features + Glass passivated chip • » « ¡g L S fiW E C V R S M # '» » .' High non-repetitive peak reverse voltage (VRSM) fsm ) A '^ ^ v v High surge current capability : Applications

Contextual Info: Single In-line Package Bridge Diode • W £ T > £ I2 I O U T L IN E D IM E N S IO N S D10XBD 600V 10A Unit • mm ■ R A TIN G S A bsolute Maximum R atings m #P *3. bC f~i a Item Symbol Pd • - - _- $im. O perating J u n c tio n Tem perature

DIFL20U

Abstract: DIFL20
Contextual Info: u*<7 p —□ * . 2 - r * — k U type Super Fast Recovery Diode Single Diode O U T L IN E D IM E N S IO N S D1FL20U 200V 1.1A • R A TIN G S Absolute Maximum Ratings Iti ^7 s m Item Sym bol on 35 —— - f%L O p era tin g J u n c tio n T e m p e ra tu re

aafj

Contextual Info: V 3 ‘> h ^ r - J V J T W - iv iL - JU K Schottky Barrier Diode R ectifier Module O U T L IN E D IM E N S IO N S D360SC5M 3 - M 4 n u ts 50V 360A m D360S C5 - V1 . « AAfJ , 2D - » • «■! U n it ■mm R A TIN G S ¡ ÎÊ ÎÎÎî^ Æ fë Absolute Maximum Ratings

Contextual Info: /XU~P K Schottky Barrier Diode Single Diode • O U T L IN E D IM E N S IO N S DE5S4M 40V 5A ■ Æ fê ü R A T IN G S s ifé ^ ii^ Â È fê m Item A b o lu te M a xim u m R a tin g s Operating Junction Temperature Maximum Reverse Voltage l i *9 M I -ttA M -V - — v M I E

GE DIODE

Abstract: L 2605 CV
Contextual Info: □ —n x sr-r* —k Super Fast Recovery Diode R ectifier Module O U T L IN E D IM E N S IO N S D240LC40 3 - M 4 nu ts t h i c k n e s s = 3.2 10 <&/ 400V 240A u e O - \é l 26+0-5 3 4 + 0-5 • '—1 1 X] o' H V 1 D240LC 40 1 H U / ! co O / ! M — ^—

Contextual Info: SQ.I.P.3S! T/U'Vv ^'I'tT-K Square In-line Package Bridge Diode • O U T L IN E D IM E N S IO N S S2VBD 600V 2A ■ R A TIN G S A bsolute Maximum R atings - _ _ E3 At % ft. — ■— •— _ * o TT ——— -— _ Type No. Symbol Conditions

Contextual Info: T / 'J y v S M 't f - K T J ^ > 'y x 9 - < y Dual In-line Package Bridge Diode • Avalanche type O U T L IN E D IM E N S IO N S S1WBCA DZ 8 0 0 V 1A Weight I 1.8g ■ R A T IN G S :^5 e!$§ if A b so lu te Maximum R a tin gs IE # B Item Symbol Wh 1 — — - _

EDH36-2

Abstract: EDH36-1 EDH36-3 EDH1
Contextual Info: 3 I J = E EDH36-r j OR IG IN E L E C T R I C CO LTD i. • 36kV S IL IC O N H IG H V O L T A G E R E C T IF Y IN G D IO D ES SÖE D t> — V i '? 2. L ' o l0 0 m A ~ 3 0 0 m A ) > :£ *& ( T a = 2 5 ‘C „ ;è + ) • m bfll307 M 00 D Ü 05 M b?S • FEATURES

SIWB

Abstract: SIWB 60 siwb 10 30 SIWB S 80 08 S1WB S 80 08
Contextual Info: Surface Mounting Device Bridgé Diode. S1WB A D/DB 600V 1A • RATINGS A bsolute Maximum R atings m Item a S tora ge Tem perature O perating J u n c tio n Tem perature ■ *A J iifittJ I U n it T s tg -4 0 -1 5 0 °C Tj 150 °C i Ï - -