505 TRANSISTOR Search Results

Contextual Info: T hal H E W L E T T 1"lim P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 505 Series Features • Frequency Range: 10 to 500 MHz • High Output Power: +20.0 dBm Typ • Temperature Compensated Applications

Contextual Info: VOLTAGE CONTROLLED VCXO Q-TECH CORPORATION CRYSTAL CLOCK OSCILLATORS -5.2Vdc & 5.0Vdc - 1kHz to 155.52MHz Description Q-Tech’s voltage-controlled crystal oscillators (VCXO) consist of a varactor diode and associated circuitry such as a bipolar transistor or logic IC amplifier, logic output buffers

TVV020

Abstract: transistor B A O 331 d 331 transistor 1080 ASI10659 406G
Contextual Info: TVV020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV020 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD 45° FEATURES: A D • Common Emitter • PG = 8.0 dB at 20 W/225 MHz • Omnigold Metalization System

8060 transistor

Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,

2SB1166

Abstract: 2SD1723 d1723
Contextual Info: O rdering num ber: EN2021A SANYO » li 2SB1166/2SD1723 N 0 .2 0 2 1 A PNP/NPN Epitaxial Planar Silicon Transistors 50V/8A Switching Applications Applications . Relay drivers, high-speed inverters, converters Features . Low collector-to-emitter saturation voltage

Contextual Info: HZJ SCS-THOMSON ^ 7 /. M g [ ^ » i C T [ i » [ ] ( g § _S D 1 5 4 0 - 0 8 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS ■ 350 WATTS (typ. IFF 1030 - 1090 MHz . 300 WATTS (min.) DME 1025 - 1150 MHz

HA1127P

Abstract: HA1127 HA1127FP IC503
Contextual Info: HA1127, HA1127P, HA1127FP 5 Transistor Arrays Pin Arrangement C1 1 14 C5 B1 2 13 E5 substrate E1 3 12 B5 B2 4 11 C4 C2 5 10 E4 B2 6 9 B4 E2 7 8 C3 (Top view) Note: Use pin 13 as the lowest potential for this IC. 503 HA1127, HA1127P, HA1127FP Absolute Maximum Ratings (Ta = 25°C)

BUK555-100A

Abstract: BUK555-100B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> m 7110flSb DDb4E4b 644 • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

431k varistor

Abstract: 14n 431K varistor
Contextual Info: 25M E,N TMOV SERIES DATA SHEET METAL OXIDE VARISTOR – TMOV SERIES FEATURE TMOV integrated thermal protection device High peak surge current rating up to 15KA Designed to facilitate compliance to UL1449 for TVSS products Wide operating voltage (V1mA) range from 150V to 1200V.

cd40107be

Abstract: texas instruments transistor manual cd40107b
Contextual Info: Data sheet acquired from Harris Semiconductor SCHS098B – Revised April 2002 The CD40107B is a dual 2-input NAND buffer/driver containing two independent 2-input NAND buffers with open-drain single n-channel transistor outputs. This device features a wired-OR capability and high output

buv51

Contextual Info: 7^537 0056751 S • " T 7 3>'3>"13 S C S -T H O M S O N IIL U m * ! S G S-TH0MS0N B U V 51 30E D FAST SWITCHING POWER TRANSISTOR ■ FAST SW ITCHING TIMES ■ LOW SW ITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERA­ TION

E11751

Abstract: E14471 E8471 E14431 E11271 E14201
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

3 PIN hall effect 506k

Abstract: Hall Effect Sensor Family 503K 509K hall effect IC 502K hall hall effect 506k 509A SOT89 hall sensor 504k hall sensor 506k hall 506A Magnetic Sensors marking code 506k sot89
Contextual Info: Hardware Documentation Data Sheet HAL 501.506, 508, 509, ® HAL 516.519, 523 Hall Effect Sensor Family Edition Nov. 27, 2003 6251-485-4DS HAL5xx DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

471kd25

Contextual Info: 25 Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 25 Φ SERIES FEATURES — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

431KD32

Contextual Info: 32 Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 32 Φ SERIES FEATURES — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

3000w power amplifier circuit diagram

Abstract: power amplifier 3000w diagram power amplifier 3000w circuit diagram 3000w power amplifier Circuit 3000w power amp 3000w amplifier SA03 3000w mosfet circuit
Contextual Info: 16-4&
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 FEATURES • WIDE SUPPLY RANGE—16-100V • 30A CONTINUOUS TO 60°C case • 3 PROTECTION CIRCUITS • ANALOG OR DIGITAL INPUTS

SA08

Contextual Info: 16-4&
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 FEATURES • IGBT OUTPUTS • WIDE SUPPLY RANGE—16-450V • 20A TO 100°C case • 3 PROTECTION CIRCUITS • SYNCHRONIZED OR EXTERNAL OSCILLATOR

nec a 634

Abstract: Nec K 872 NEC Ga FET C band FET transistor s-parameters NEC 1132 NEC Ga FET marking D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS

Contextual Info: 25Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 25 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

Contextual Info: 14Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 14 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

821KD14J

Abstract: 391KD14 223 Varistor 104271k 271kd14 470KD14 511KD14-j 180kd14 511KD14 VARISTOR 390KD14
Contextual Info: 14Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 14 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

CM500S

Abstract: CXD1267AN ICX054BL ICX404AL
Contextual Info: ICX404AL Diagonal 6mm Type 1/3 CCD Image Sensor for EIA B/W Video Cameras Description The ICX404AL is an interline CCD solid-state image sensor suitable for EIA B/W video cameras with a diagonal 6mm (Type 1/3) system. Compared with the conventional product ICX054BL, basic

471kd20 varistor

Abstract: 271KD20J 751KD20
Contextual Info: 20Φ SERIES DATA SHEET METAL OXIDE VARISTOR – 20Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 18V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.