500V RELAY Search Results

FSS430

Abstract: 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112
Contextual Info: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 02 /Subject (3A, 500V, 2.70 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3A, 500V, 2.70

IRF820

Abstract: irf-82
Contextual Info: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()

RFM10N50

Abstract: AN7254 AN7260 RFM10N45 TA17435
Contextual Info: [ /Title RFM10 N45, RFM10 N50 /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm,

TA17425

Abstract: AN7254 AN7260 RFM6N45 RFP6N45 RFP6N50 TB334 20KW motor
Contextual Info: [ /Title RFM6 N45, RFP6N4 5, RFP6N5 0 /Subject (6A, 450V and 500V, 1.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM6N45, RFP6N45, RFP6N50 Semiconductor 6A, 450V and 500V, 1.250 Ohm,

Contextual Info: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSF450D, FSF450R 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 9A, 500V, rDS ON = 0.600Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
Contextual Info: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

TA17435

Abstract: RFM10n50 AN7254 AN7260 RFM10N45
Contextual Info: RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 O hm , N-Channel Power M O SFETs September 1998 Features Description • 10A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically

10VJ

Abstract: IRFP450 TA17435 TB334
Contextual Info: IRFP450 Semiconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A, 500V • rDS ON = 0.40062 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

NI-26

Abstract: Rad Hard in Fairchild for MOSFET 2E12 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
Contextual Info: FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

43721

Contextual Info: JANSR2N7398 EB Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 2A, 500V, ros O N = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSF450D, FSF450R 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs e 1998 Features Description • 9A, 500V, Tqs ^o N = 0.600£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

IRFF420

Abstract: TB334 MOSFET 400V 16A
Contextual Info: IRFF420 Data Sheet March 1999 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET • 1.6A, 500V Formerly developmental type TA17405. Ordering Information PACKAGE 1891.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

datasheet irfp460 mosfet

Abstract: IRFP460 application irfp460 IRFP460 APPLICATION NOTE 5102 mosfet irfp460 data sheet power mosfet 500v 20a circuit TB334 irfp460 dc motor circuit
Contextual Info: IRFP460 Data Sheet January 2002 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features • 20A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

irfp460 dc motor circuit

Abstract: IRFP460 TB334
Contextual Info: IRFP460 Data Sheet July 1999 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP460 • 20A, 500V • rDS ON = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

datasheet irfp450 mosfet

Abstract: rectifier d 355 n 2000 IRFP450 TA17435 TB334
Contextual Info: IRFP450 Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP450 • 14A, 500V • rDS ON = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

TA17425

Abstract: IRF440 TB334
Contextual Info: IRF440 Data Sheet March 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET • 8A, 500V Ordering Information PACKAGE TO-204AE • rDS ON = 0.850Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds

G20N50c

Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
Contextual Info: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance

application IRFP450

Abstract: datasheet irfp450 mosfet IRFP450 TA17435 TB334 IRFP45
Contextual Info: IRFP450 Data Sheet January 2002 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features • 14A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

diode 10a 400v

Abstract: 200v dc motor igbt ultrafast diode 10a 400v 10N40F1D ge 047 TRANSISTOR HGTP10N40F1D HGTP10N50F1D 10N50F1
Contextual Info: HGTP10N40F1D, HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR GATE • High Input Impedance

IRFF430

Abstract: TA17415 TB334
Contextual Info: IRFF430 Data Sheet January 2002 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET Features • 2.75A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFF420

Abstract: TB334
Contextual Info: IRFF420 Data Sheet January 2002 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET Features • 1.6A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of