500MHZ TRANSISTOR Search Results

ic for driver get 14pin

Abstract: EL5164 EL5165 EL5167 EL5462 EL5462IS
Contextual Info: EL5462 Data Sheet February 14, 2005 500MHz Low Power Current Feedback Amplifier FN7492.0 Features • 500MHz -3dB bandwidth The EL5462 is a current feedback amplifier with a bandwidth of 500MHz which makes this amplifier ideal for today’s high speed video and monitor applications.

Contextual Info: EL5462 Data Sheet February 14, 2005 500MHz Low Power Current Feedback Amplifier FN7492.0 Features • 500MHz -3dB bandwidth The EL5462 is a current feedback amplifier with a bandwidth of 500MHz which makes this amplifier ideal for today’s high speed video and monitor applications.

MAX4112EUA

Abstract: MAX4113 MAX4113ESA MAX4112 MAX4112ESA
Contextual Info: 19-0443; Rev 0; 9/95 500MHz, Low-Power, Current-Mode Feedback Amplifiers _Applications Broadcast and High-Definition TV Systems _Features ♦ 500MHz -3dB Bandwidth MAX4112 275MHz -3dB Bandwidth (MAX4113)

34B DBM

Abstract: carbon composition resistors Video Op Amps 300MHz MAX4112ESA MAX4112EUA MAX4117 MAX4118 op closed-loop
Contextual Info: 19-0440; Rev 1; 8/96 KIT ATION EVALU BLE AVAILA Single/Dual, 500MHz, Low-Power, Current-Mode Feedback Amplifiers _Applications Broadcast and High-Definition TV Systems _Features ♦ 500MHz -3dB Bandwidth MAX4112/MAX4117

2sc2026

Abstract: transistor 2sc2026 vhf high gain transistor high power npn UHF transistor 2sc2026 transistor data NPN rf transistor "rf transistor" RF POWER TRANSISTOR NPN
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION •Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High Power Gain Gpe= 15dB TYP. @ f= 500MHz ·High Gain Bandwidth Product fT= 2.0GHz TYP. APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF

Contextual Info: DATA SHEET ICS8427-02 ICS8427-02 500MHZ, LOWIntegrated JITTER LVCMOS/CRYSTAL-TOCircuit Systems, Inc. SYNTHESIZER LVHSTL FREQUENCY 500MHZ, LOW JITTER LVCMOS/CRYSTAL-TO-LVHSTL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS8427-02 is a general purpose, six

MITSUBISHI frequency counter ics

Contextual Info: MITSUBISHI ICs COMMUNICATION M64812GP Preliminary Notice;This is not a final specification. some parametric limits are subject to change. 2.0GHz/500MHz DUAL PLL FREQUENCY SYNTHESIZER DESCRIPTION The M64812GP is a 2.0GHz/500MHZ band twosystem one-chip PLL frequency synthesizer .

BF5Z

Abstract: SBF-5089 hemt Ee marking ee hemt SBF 5089 SBF5089 SBF-5089Z SBF50 sbf5089z marking code 827 sot89
Contextual Info: SBF-5089 Z SBF-5089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF-5089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar

M64811AGP

Abstract: TCXO 19.2MHZ MITSUBISHI frequency counter ics
Contextual Info: MITSUBISHI ICs COMMUNICATION M64811AGP 1.1GHz/500MHz DUAL PLL FREQUENCY SYNTHESIZER FOR DIGITAL CELLULAR PHONE DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M64811AGP is a 1.1GHz/500MHz band two-system one-chip PLL frequency synthesizer . Using a high performance Bi-CMOS process , the product

Contextual Info: MITSUBISHI ICs COMMUNICATION M64811AGP 1.1GHz/500MHz DUAL PLL FREQUENCY SYNTHESIZER FOR DIGITAL CELLULAR PHONE DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M64811AGP is a 1.1GHz/500MHz band two-system one-chip PLL frequency synthesizer. Using a high performance Bi-CMOS process, the product

NTE23

Contextual Info: NTE23 Silicon NPN Transistor Ultra High Frequency Amp Description: The NTE23 is suitable for a low noise amplifier in the VHF to UHF band. Features: D Low Noise Figure: NF 3.0dB Typ. @ f = 500MHz D High Power Gain: Gpe 15dB Typ. @ f = 500MHz D High Cutoff Frequency: fT = 2.0GHz Typ

Contextual Info: £/ ne. ,O I TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 MMBR920L Silicon NPN RF Transistor DESCRIPTION • Low Noise NF= 2.4dB TYP. @ f= 500MHz • High Gain SOT- 2 3 package I Gpe= 15dB TYP. @ f= 500MHz

EL5162

Abstract: EL5163 EL5164 EL5167 EL5262 EL5263 EL5362 FN7388 F 5 Ld SOT-23 MDP0038
Contextual Info: EL5162, EL5163, EL5262, EL5263, EL5362 Data Sheet March 16, 2007 500MHz Low Power Current Feedback Amplifiers with Enable The EL5162, EL5163, EL5262, EL5263, and EL5362 are current feedback amplifiers with a bandwidth of 500MHz. This makes these amplifiers ideal for today’s high speed

FN7388

Abstract: EL5163IWZ-T7A EL5362IUZ-T7 so8 150 MIL EL5162 EL5163 EL5164 EL5167 EL5262 EL5263
Contextual Info: EL5162, EL5163, EL5262, EL5263, EL5362 Data Sheet January 4, 2008 500MHz Low Power Current Feedback Amplifiers with Enable The EL5162, EL5163, EL5262, EL5263, and EL5362 are current feedback amplifiers with a bandwidth of 500MHz. This makes these amplifiers ideal for today’s high speed

hemt Ee

Abstract: InP HBT transistor low noise SBF-4089 SBF-4089Z RF POWER TRANSISTOR 70mhz
Contextual Info: SBF-4089 Z SBF-4089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF-4089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar

LTC6269HMS8E

Abstract: LTC6268 LTC6252 LTC6246
Contextual Info: LTC6268/LTC6269 500MHz Ultra-Low Bias Current FET Input Op Amp Features Description Gain Bandwidth Product: 500MHz n –3dB Bandwidth A = 1 : 350MHz n Low Input Bias Current: ±3fA Typ. Room Temperature 4pA Max at 125°C n Current Noise (100kHz): 5.5fA/√Hz

Contextual Info: ANALOG DEVICES □ FEATURES DC to >500MHz Operation Differential ±1V Full Scale Inputs Differential ±4mA Full Scale Output Current Low Distortion {<0.05% for OdBm Input Supply Voltages from ±4V to ±9V Low Power 280mW typical at VS= ± 5V ) 500MHz Four-Quadrant Multiplier

Contextual Info: SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal

HBT transistor

Abstract: SBF4089ZPCK1
Contextual Info: SBF4089Z SBF4089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal

Contextual Info: ANALOG DEVICES □ FEATURES DC to >500MHz Operation Differential ±1V Full Scale Inputs Differential ±4mA Full Scale Output Current Low Distortion <0.05% for OdBm Input Supply Voltages from ±4V to ±9V Low Power (280mW typical at VS= ±5V ) 500MHz Four-Quadrant Multiplier

Contextual Info: EL5162, EL5163, EL5262, EL5263, EL5362 Data Sheet January 4, 2008 500MHz Low Power Current Feedback Amplifiers with Enable The EL5162, EL5163, EL5262, EL5263, and EL5362 are current feedback amplifiers with a bandwidth of 500MHz. This makes these amplifiers ideal for today’s high speed

BDA SOT23-5

Abstract: FN7388 EL5164 EL5167 EL5262 EL5263 EL5362 EL5162 EL5163 INTERSIL marking 5 sot
Contextual Info: EL5162, EL5163, EL5262, EL5263, EL5362 Data Sheet May 7, 2007 500MHz Low Power Current Feedback Amplifiers with Enable The EL5162, EL5163, EL5262, EL5263, and EL5362 are current feedback amplifiers with a bandwidth of 500MHz. This makes these amplifiers ideal for today’s high speed

Contextual Info: SBF4089Z SBF4089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal

SBF-5089Z

Abstract: InP transistor HEMT InP HBT transistor low noise
Contextual Info: SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal