500-NS THYRISTOR Search Results

skko

Abstract: SKKT15 510A2s Diode semikron skke
Contextual Info: sem ikr d n V rsm V rrm dv/dt cr Itrm s (maximum values for continuous operation) 24 A 1);2 8 A a) V drm h*AV {sin. 180; V 500 700 900 1300 1500 1700 V V/ns 17,5 A2) 400 600 800 500 500 500 500 500 500 SKKT 15/04 SKKT 15/06 SKKT 15/08 SKKT 15/12 SKKT 15/14

SKST

Abstract: SKST130/06 Semikron 50 04 a3
Contextual Info: 3hE D SEMIKfR0 N INC V r sm V rrm dV/dt br • Ôl3bb?l ÜQG231Ô T BISE KG 5EMIKR0N It r m s (maximum values for continuous operation) 225 A 165 A V drm It a v (sin. 180; Tease = 85 °C ) V V V/ns 90 A 130 A 400 300 500 500 400 500 700 600 500 SKST 90/03 D

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MAC321 Series Triacs Silicon Bidirectional Thyristors . designed for full-wave ao control applications primarily in industrial environments needing noise Immunity. • Guaranteed High Commutation Voltage dv/dt — 500 V/ns Min @ T c = 25°C

Contextual Info: s e m ik r o n Fast Recovery Rectifier Diodes If bm s maximum values for continuous operation V rsm V rrm 260 A Ifav (sin. 180; Tease = 85 °C) 1000 1200 168 A trr = 500 ns trr = 800 ns $ V 800 160 A SKN SKN SKN SKN SKN SKN 135 136 135 136 135 136 $ SKR

SKT240

Abstract: SKT491/18E SKT491/12E SKT551/16E b337 KT340 SKT490 SKT551/18E SKT240/04D SKT240/14E
Contextual Info: SEM IKR O N 1SE INC D I A13bfa71 'T-zs-ioi Vrsm Vrrm Vdrm i\ d- t /ic r maximum values for continuous operation 600 A I 700 A (sin. 180;Tcase = • • •! DSC) 380 A (60 °C) 450 A (57 °C) Itrm s Itav V V V/ns 500 400 500 SKT 240/04 D SKT340/04 D 900

Semikron SKR 141

Abstract: skn diodes 140F12
Contextual Info: VRSM VRRM Fast Recovery Rectifier Diodes IFRMS maximum values for continuous operation 260 A IFAV (sin. 180; Tcase = 85 °C) 160 A 168 A trr = 500 ns trr = 800 ns SKN 135 F SKN 136 F SKN 140 F SKN 141 F V 800 SKN 135 F 08 SKN 136 F 08 1000 SKN 135 F 10 SKN 136 F 10

Semikron SKR

Abstract: skr 115 Semikron SKR 40 /12 SKN135F SKN136F SKN140F SKN141F SKR135F 120P1 12-SKN
Contextual Info: VRSM VRRM Fast Recovery Rectifier Diodes IFRMS maximum values for continuous operation 260 A IFAV (sin. 180; Tcase = 85 °C) 160 A 168 A trr = 500 ns trr = 800 ns SKN 135 F SKN 136 F SKN 140 F SKN 141 F V 800 SKN 135 F 08 SKN 136 F 08 1000 SKN 135 F 10 SKN 136 F 10

SKT760

Abstract: semikron skt 1500 semikron skt 10
Contextual Info: s e M IK R D n V rsm Ith m s maximum values for continuous operation V rrm V drm (V - dt1 Jcr 1400 A 1600 A I SKT 600 SKT 760 I ta v (sin. 180; Tcase = •■■ >DSC) V V/ns V 890 A (57 °C) 1020 A (56 °C) 500 400 500 SKT 600/04 D SKT 760/04 D 900 800

thyristor tt 330 n

Abstract: thyristor skkt162 A23i thyristor tt 330 thyristor TT 18 N thyristor tt 162 n 12
Contextual Info: s e MIKRDN dv/dt « Itrms (maximum values for continuous operation) 600 A 700 A Vrsm Vrrm V drm V V V/ns 900 1300 1500 1700 1900 2100 2300 800 1200 1400 1600 1800 2000 2200 500 1000 1000 1000 1000 1000 1000 180; (Tease ~ . . .) Sin. Itsm Tvj = Tvj = Tvj =

33B3 diode

Abstract: S/33B3 diode
Contextual Info: 51E D • Ô13bb71 DOÜ33b3 BISEK6 se MIKR dn SEMIKRON INC V V 125 A ITAV sin. 180; Tease = 78 °C 80 A V/ns - SKKH 72/06 D 500 SKKT 71/08 D SKKT 72/08 D1) SKKH 71/08 D SKKH 72/08 D LO 700 SEMIPACK 1 Thyristor/ Diode Modules It r m s (maximum value for continuous operation)

skkt 90

Abstract: KT25 KT213 mikron
Contextual Info: s e MIKROn V rsm V rrm Vdrm V V 900 dv/dt cr Itrms (maximum values for continuous operation) 370 A | 420 A j j 420 A Ita v (sin. 180; case —85 °C 250 A V/ns 230 A SKKT SKKT 800 500 213/08D 253/08 D 250 A SKKH 1200 1000 213/12 E 253/12 E 213/12 E 253/12 E

t-122 diode

Abstract: Skkt122/16E
Contextual Info: se MIKRDN V rsm V rrm V drm d W d t c r Itrm s (maximum values for continuous operation) 195 A Ita v V/ns (sin. 180: Tease = 85 °C) 128 A V V 900 800 500 SKKT 122/08 D 1300 1200 1000 SKKT 122/12 E 1500 1400 1000 SKKT 122/14 E 1700 1600 1000 SKKT 122/16 E

2sd 209 l

Abstract: semikron skt 513 SKT300 B331 SKT300-08C SKT250 semikron skt 300 B3-28 TO-209 b327
Contextual Info: S1E D Ö13bb71 DOOBMfib a 77 s e m ik r g n SEMIKRON INC V rsm Itrm s V rrm iV-dt i/o r V drm maximum values for continuous operation 450 A I 550 A (sin. 180; Tease “ . .°C) 285 A (77 °C) 350 A (85 °C) Ita v V V V/ns 500 400 200 SKT250/04 C SKT300/04 C

2sd 5200

Abstract: SKT300 skt 2500 semikron skt 450 semikron skt 24 SKT250 to-209ad C450A M24-P 2sd 209 l
Contextual Info: S1E D Ö13bb71 DOOBMfib a 77 s e m ik r g n SEMIKRON INC V rsm Itrm s V rrm iV-dt i/or V drm maximum values for continuous operation 450 A I 550 A (sin. 180; Tease “ . .°C) 285 A (77 °C) 350 A (85 °C) Ita v V V V/ns 500 400 200 SKT250/04 C SKT300/04 C

GTO thyristor

Abstract: SKGH thyristor tt 31 1600 thyristor TT 110A GTO MODULE
Contextual Info: ISE 0 I 813U.71 0001SQ5 3 | S^MIKRON.INC V drm V V rrm V 800 1000 1200 1400 1600 15 15 15 15 15 T k .Z3 seMIKRDn SEMIPACK 3 GTO Thyristor/ Diode Modules SKGH 500/08 SKGH 500/10 SKGH 500/12 SKGH 500/14 SKGH 500/16 SKGH500 GTO thyristor data Symbol SKGH 500

Contextual Info: GEC P L E S S E Y S i S E M I C O N D U C T O R S DS4092-2.2 DG646BH25 GATE TURN-OFF THYRISTOR APPLICATIONS KEY PARAMETERS 2000A 2500V 867A •t AV dVj/dt 1000V/HS 300A/|iS d lp /d t ■ Variable speed A.C. motor drive inverters (VSD-AC). ■tcm V DRM ■ Uninterruptable Power Supplies

Contextual Info: WESTCODE SEMICONDUCTORS E“ Capsule Phase Control Thyristor Consists of a diffused silicon element mounted in an hermetic ceramic cold welded capsule, and features an amplifying gate. Available in industry standard housing and thin housings. Ratings U n le ss otherwise indicated Tj = 125°C

e20d

Abstract: T510S
Contextual Info: Fast thyristors Type It r m s m V drm V f i2dt N W m^ c V T0 It (di/dt)cr (dv/dt)cr V st I gt R th J C = Vrrm + 100 V v rsm DIN DIN I EC 747-6 tvj = tvj = 25 °C 25 °C 180 “el sinus V mA °C/W °c A V 200 400 50 2 500 500 1000 200 0,108 140 9 10 m s, 180 °el

Contextual Info: , Fast thyristor modules Type V drm blE T> m 34032^7 DDD1337 ESI « U P E C EUPEC It r m s m It s m V TO / i 2d t (di/dt)cr Tt (dv/dt)cr tq R th J O R th C K tvj max Outline V rrm V d sm = V drm V r sm = VRRM + 100 V A V 10 ms, 10 ms, 180 °el t,¡ = tvj

A198S

Contextual Info: Fast asym m etric thyristors Type V drm V dsm = V drm V A 158 S V rrm It r m s It s m ,/’i2dt ItA V M ^c di/dt cr V(TO) (dv/dt)cr ^G T Ig t D IN >V| = tvj = 180 °el 25 “C 2 5 °C sin u s V mA °c/w °C R , h jc tvj Outline ( V r r M(C) t, = 10 m s.

MCT thyristor

Abstract: mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6
Contextual Info: MCTV35P60F1D Semiconductor April 1999 AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor MCT OLET S OBS S PROCE Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC

V23990-P401-D

Contextual Info: V23990-P401-D flow PFC 0, 500V version 0303 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Condition Input Rectifier Thyristor Thyristore Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung

T308

Abstract: 200n60 41178 T821 T930S T1052 T 290 eupec thyristors EUPEC T 691 S 6210s
Contextual Info: Fast thyristors Type 34Q35T7 MTE D •trm sm V drm Itsm / i 2dt Itavm^ c V TO 10 ms, 10 ms, Ivi m ax 180 °el sin. tv, •vj max tvj m ax A A2S A/°C V UPEC DOOOlDfe. TBT (di/dt)cr (dv/dt)cr Ivj max DIN IEC 747-6 DIN IEC 747-6 m£2 A/flS it EUPE I- a Vgt

MCT thyristor

Abstract: MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60
Contextual Info: MCTV35P60F1D S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT with Anti-Parallel Diode March 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC • 800A Surge Current Capability A • 800A/µs di/dt Capability