500 WATTS AMPLIFIER SCHEMATIC DIAGRAM Search Results

AD8072

Abstract: AD8072ARM AD8072ARM-REEL AD8072ARM-REEL7 AD8072JN AD8072JR AD8072JR-REEL AD8072JR-REEL7 AD8073
Contextual Info: a FUNCTIONAL BLOCK DIAGRAMS 8-Lead Plastic N , SOIC (R), and ␮SOIC (RM) Packages The AD8072 (dual) and AD8073 (triple) are low cost, current feedback amplifiers intended for high volume, cost sensitive applications. In addition to being low cost, these amplifiers

ELMWOOD SENSORS

Abstract: AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD
Contextual Info: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high

LF400

Contextual Info: Precision, 16 MHz CBFET Op Amp AD845 ANALOG DEVICES □ FEATURES Replaces Hybrid Amplifiers in Many Applications AC PERFORMANCE: Settles to 0.01 % in 350 ns 100 V/|xs Slew Rate 12.8 MHz min Unity-Gain Bandwidth 1.75 MHz Full-Power Bandwidth at 20 V p-p CONNECTION DIAGRAMS

500 watts amplifier schematic diagram pcb layout

Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
Contextual Info: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a

OZ 9976

Abstract: 7433 7433 diagram DL1020 DL805 MERA-533 MERA-556 MERA-7433 MERA-7456 AN-60-032
Contextual Info: Application Note AN-60-032 Uses and Advantages of “MERA” Dual Matched MMIC Amplifiers 1.0 Introduction The Mini-Circuits ERA and Gali series of amplifiers are monolithic HBT devices in Darlington configuration. They are wide band 50-ohm amplifiers that are easy to use, as they require very few external components. Wide

Contextual Info: ANALOG DEVICES High Speed, Low Power Monolithic Op Amp FEATURES 50 MHz Unity Gain Bandwidth 4.8 mA Supply Current 300 V /jis Slew Rate 65 ns Settling Time to 0.1% for a 10 V Step 0.04% Differential Gain 0.19° Differential Phase Drives Capacitive Loads CONNECTION DIAGRAM

Contextual Info: Quasi-Isolated Flyback; 12V Car Accessory Plug to 5V @ 1.2A Reference Design PRD1205 FEATURES • • • • • Input - Output partially isolated to prevent ground loops Direct primary-seconday feedback through differential op amp provides accurate Vout control

2a258 transistor

Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

500 watt power circuit diagram uc3825

Abstract: AXP 202 AXP 192 1N4465 unitrode Applications Note U-107 u107 SEM500 USD1140 tesla diode ZENER 500 watt power circuit diagram uc3825 U-110 CURRENT MODE CONTROLLED WATT POWER SUPPLY
Contextual Info: U-110 _ U N IT R O D E APPLICATION NOTE 1.5 MHZ CURRENT MODE IC CONTROLLED 50 WATT POWER SUPPLY Abstract Introduction This application note highlights the development of a 1.5 megahertz current mode IC controlled, 50 watt power supply. Push-pull topology is

NE540

Abstract: SE540 NE540 equivalent 500 watts amplifier schematic diagram 236BG 5612
Contextual Info: PIN CONFIGURATION FEATURES . • • • • INTERNAL CURRENT LIMITING LOW STANDBY CURRENT HIGH OUTPUT CURRENT CAPABILITY WIDE POWER BANDWIDTH LOW DISTORTION ABSOLUTE MAXIMUM RATINGS Supply Voltage Operating Temperature Range Storage Temperature Range Output Short Circuit Duration

Contextual Info: AG606 Push-Pull CATV Amplifier Product Features • • • • • • Product Information Product Description Functional Diagram The AG606 is a dual amplifier containing two internal matched amplifiers optimal for a push-pull configuration. The internal amplifiers employ InGaP HBT technology

Apogee

Abstract: EB-2060X EB-2060 transistor subwoofer circuit diagram OMRON 1230 volume potentiometer 1k ohm subwoofer PREAMP circuit diagram C41 CENTRALAB CT622LY SMD electrolytic capacitor 100uF 63V
Contextual Info: EB-2060x DDX All-Digital, High Efficiency Evaluation Amplifier GENERAL DESCRIPTION FEATURES The EB-2060x is an evaluation amplifier that showcases Apogee’s all-digital, high efficiency Direct Digital Amplification DDX technology. The board features a DDX-2000 Controller and DDX-2060

500 watt power circuit diagram uc3825

Abstract: H7C4 TDK CORE H7C4 SEM-400 SEM500 UC3825 push pull dc to dc converter H7C4 permeability UFN633 SEM400 H7C4 EE
Contextual Info: U-110 APPLICATION NOTE 1.5 MHZ CURRENT MODE IC CONTROLLED 50 WATT POWER SUPPLY Abstract Introduction This application note highlights the development of a 1.5 megahertz current mode IC controlled, 50 watt power supply. Push-pull topology is utilized for this DC to DC converter application of

1000 watt mosfet power amplifier

Contextual Info: Preliminary SLD1000 Product Description The SLD1000 is a 3.5 Watt high performance LDMOS transistor die, designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD1000 is typically used as a

500 watts amplifier schematic diagram

Abstract: OZ 960 OZ 960 S G200
Contextual Info: PTF 10139 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full

500 watts amplifier schematic diagram

Abstract: NGT 03 G200
Contextual Info: PTF 10139 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full

DB325C

Abstract: 6254b TAT6254B TAT6254B-EB
Contextual Info: TAT6254B Fiber To The Home RF Amplifier 47–1000 MHz Applications • High dynamic range FTTH  RFoG Radio Frequency over Glass and GPON FTTH  Multi Dwelling Unit TIA  Mini-node Product Features Functional Block Diagram      Pin compatible with the TAT6254C

tip132

Abstract: TIP137 tip131 300 watts amplifier circuit diagram with specific 500 watts amplifier schematic diagram transistors tip131 tipxxx
Contextual Info: TIP131, TIP132 NPN , TIP137 (PNP) Preferred Devices Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 4.0 Adc

transistor 6c x

Abstract: MRF9060 MRF9060 equivalent MOTOROLA transistor 413 BC857 LP2951 MRF9060S MRF9060SR1
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs

LF400

Abstract: ad845 LH0062 EIA-481A R-16 OPA605
Contextual Info: a FEATURES Replaces Hybrid Amplifiers in Many Applications AC PERFORMANCE: Settles to 0.01% in 350 ns 100 V/␮s Slew Rate 12.8 MHz min Unity-Gain Bandwidth 1.75 MHz Full-Power Bandwidth at 20 V p-p DC PERFORMANCE: 0.25 mV max Input Offset Voltage 5 ␮V/؇C max Offset Voltage Drift

Contextual Info: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 RF Power Field Effect Transistors MRF21060R3 MRF21060S N–Channel Enhancement–Mode Lateral MOSFETs MRF21060SR3 The RF MOSFET Line Designed for PCN and PCS base station applications from frequencies up to

T17 motorola

Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

Contextual Info: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to