500 WATT AMPLIFIER SCHEMATIC Search Results

Avantek amplifier UTC

Abstract: AVANTEK tc-1 hp2 800
Contextual Info: H Avantek Products High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz Technical Data CTO-565 Features Description Pin Configuration • 1 Watt Output Power The CTO-565 is a high gain, high efficiency , Class A 1 Watt amplifier designed to provide broadband power for a wide variety of

Transistor 3-354

Contextual Info: H Avantek Products High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz Technical Data UTO/UTC-565 Features Description Pin Configuration • • • • • The UTO/UTC-565 is a high gain, high efficiency, Class A, 1 watt amplifier, designed to provide

Contextual Info: High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz Technical Data UTO/UTC-565 Features Description Pin Configuration • • • • • The UTO/UTC-565 is a high gain, high efficiency, Class A, 1 watt amplifier, designed to provide broadband power for a wide

hp 1458

Abstract: transistors a 1757 AVANTEK utc 10 - 104 m Avantek* UTC Avantek amplifier UTC
Contextual Info: fhol H EW LETT WLHM PACKARD Avantek Products High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz Technical Data UTO/UTC-565 Features Description Pin Configuration • • • • • The UTO/UTC-565 is a high gain, high efficiency, Class A, 1 watt amplifier, designed to provide

Contextual Info: Whnl H E W L E T T mUnM P a c k a r d Avantek Products High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz Technical Data CTO-565 Features Description • 1 Watt Output Power • Low Current: 450 mA The CTO-565 is a high gain, high efficiency, Class A 1 Watt ampli­

Contextual Info: data sheet 8 1992 UTO/UTC-565 High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz June, 1991 0AVANTEK Features Applications • • • • • • • • • • • • • 1 Watt Output Power Low Current: 450 mA High Gain: 19.5 dB Typ 18 Volt Bias

PTFA041501E

Abstract: BCP56 LM7805 PTFA041501F R250 LM7805 voltage regulator packages
Contextual Info: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

PTFA041501E

Abstract: BCP56 LM7805 PTFA041501F R250 IM335 resistor 33k ohms
Contextual Info: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

po111

Abstract: LM7805 LM780
Contextual Info: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They

Avantek* UTO

Contextual Info: W hoI H E W L E T T 1"HM P A C K A R D Avantek Products High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz Technical Data UTO/UTC-565 Features Description Pin Configuration • • • • • The UTO/UTC-565 is a high gain, high efficiency, Class A, 1 watt

transistor SL-100

Abstract: sl-100 TRANSISTOR
Contextual Info: Whn% H E W L E T T mLfim P A C K A R D Avantek Products High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz Technical Data 1 CTO-565 Features Description Pin Configuration • 1 W att Output Pow er The CTO-565 is a high gain, high efficiency , Class A 1 Walt ampli­

M513

Abstract: MAAPSM0008 MAAPSM0008SMB MAAPSM0008TR MAAPSM0008TR-3000 RO4350 4 mm 16 lead PQFN Package
Contextual Info: 1 Watt Power Amplifier 4.9 - 6.0 GHz MAAPSM0008 V3 Features • • • • • • • Functional Schematic U-NII and Hiperlan Applications Saturated Output Power: 31.5 dBm at +7 V Saturated Output Power: 29.0 dBm at +5 V 20.5 dB Gain No External RF Matching

Contextual Info: 1 Watt Power Amplifier, 4.9 - 6.0 GHz MAAPSM0008 V2 Features • • • • • • • Functional Schematic U-NII and Hiperlan Applications Saturated Output Power: 31.5 dBm at +7 V Saturated Output Power: 29.0 dBm at +5 V 20.5 dB Gain No External RF Matching

802.11a Amplifier

Abstract: M513 MAAPSM0008 MAAPSS0096 MAAPSS0096SMB MAAPSS0096TR MAAPSS0096TR-3000 RO4350 4 mm 16 lead PQFN Package
Contextual Info: RoHS Compliant 1 Watt Power Amplifier 4.9 - 6.0 GHz MAAPSS0096 V1 Features Functional Schematic • 802.11a Applications • WiMax Applications • Saturated Output Power: 31.5 dBm at +7 V 29.0 dBm at +5 V • Gain: 20.5 dB • No External RF Matching • Meets 802.11a Linearity Requirements

Contextual Info: HMC998LP5E v01.0813 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz Features Amplifiers - Linear & Power - SMT Typical Applications The HMC998LP5E is ideal for: P1dB Output Power: +31 dBm • Test Instumentation Psat Output Power: +33 dBm • Microwave Radio & VSAT

HMC998LP5E

Abstract: EVAL01-HMC998LP5E 500 watt RF amplifier GHz
Contextual Info: HMC998LP5E v00.0612 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz Typical Applications Features The HMC998LP5E is ideal for: P1dB Output Power: +31 dBm • Test Instumentation Psat Output Power: +33 dBm • Microwave Radio & VSAT

HMC998

Contextual Info: HMC998 v01.0811 Amplifiers - Linear & Power - Chip GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Typical Applications Features The HMC998 is ideal for: High P1dB Output Power: +31 dBm • Test Instrumentation High Psat Output Power: +33 dBm • Microwave Radio & VSAT

Contextual Info: HMC998LP5E v00.0612 Amplifiers - lineAr & power - smT GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz Typical Applications Features The HmC998lp5e is ideal for: p1dB output power: +31 dBm • Test Instumentation psat output power: +33 dBm • Microwave Radio & VSAT

HMC998

Abstract: PA 0016
Contextual Info: HMC998 v01.0811 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Amplifiers - Linear & Power - Chip Typical Applications Features The HMC998 is ideal for: High P1dB Output Power: +31 dBm • Test Instrumentation High Psat Output Power: +33 dBm • Microwave Radio & VSAT

s227

Contextual Info: HMC998 v00.0611 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Amplifiers - Linear & Power - Chip Typical Applications Features The HMC998 is ideal for: High P1dB Output Power: +31 dBm • Test Instrumentation High Psat Output Power: +33 dBm • Microwave Radio & VSAT

Contextual Info: HMC1014 v00.0312 Amplifiers - lineAr & power - CHip GaAs pHEMPT MMIC 0.5 Watt POWER AMPLIFIER 33.5 - 46.5 GHz Typical Applications Features The HmC1014 is ideal for: p1dB output power: +24.5 dBm • Point-to-Point Radios psat output power: +27.5 dBm • Point-to-Multi-Point Radios

Contextual Info: HMC1024 v01.0712 Amplifiers - Linear & Power - Chip GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 27.5 - 33.5 GHz Typical Applications Features The HMC1024 is ideal for: Saturated Output Power: +31 dBm @ 29% PAE • Point-to-Point Radios High Output IP3: +40 dBm

LY8898S

Contextual Info: LY8898 Rev. 1.2 3.2 Watt Audio Power Amplifier FEATURES GENERAL DESCRIPTION „ 3.2W Into 3Ω from 5.0V power supply at THD+N = 10% Typ. . „ 2.7W Into 4Ω from 5.0V power supply at THD+N = 10% (Typ.). „ 1.7W Into 8Ω from 5.0V power supply at THD+N = 10% (Typ.)

Contextual Info: HMC1024 v01.0712 Amplifiers - lineAr & power - Chip GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 27.5 - 33.5 GHz Typical Applications Features The hmC1024 is ideal for: saturated output power: +31 dBm @ 29% pAe • Point-to-Point Radios high output ip3: +40 dBm